KR830004681A - 다이오드 및 그것을 이용한 rom 또는 eeprom - Google Patents

다이오드 및 그것을 이용한 rom 또는 eeprom Download PDF

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Publication number
KR830004681A
KR830004681A KR1019800004729A KR800004729A KR830004681A KR 830004681 A KR830004681 A KR 830004681A KR 1019800004729 A KR1019800004729 A KR 1019800004729A KR 800004729 A KR800004729 A KR 800004729A KR 830004681 A KR830004681 A KR 830004681A
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South Korea
Prior art keywords
diode
rom
eeprom
region
sectional
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KR1019800004729A
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English (en)
Inventor
에이취. 홀름버그 스콧트
에이. 플라스크 리처드
Original Assignee
스탠포드 알. 오브신스키
에너지 컨버션 디바이스, 인코포레이티드
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Application filed by 스탠포드 알. 오브신스키, 에너지 컨버션 디바이스, 인코포레이티드 filed Critical 스탠포드 알. 오브신스키
Publication of KR830004681A publication Critical patent/KR830004681A/ko

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    • H—ELECTRICITY
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5252—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/685—Hi-Lo semiconductor devices, e.g. memory devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • G—PHYSICS
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    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
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    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Bipolar Transistors (AREA)
  • Non-Volatile Memory (AREA)

Abstract

내용 없음

Description

다이오드 및 그것을 이용한 ROM 또는 EEPROM
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 의해서 만든 다이오드를 포함하는 모두 박막 증착된 ROM장치 지지체를 형성하는 기판의 박막 증착면 단면도. 제2도는 제1도의 ROM장치의 기억회로를 선(2-2)에 따라서 나타낸 단면도. 제4도는 본 발명으로 만든 다이오드를 포함하는 기억회로를 포함한 모두 박막 증착된 EEPROM장치 지지체를 형성하는 기판의 박막 증착면의 단면도. 제5도는 제4도의 두 기억회로를 선(5-5)에 따라 나타낸 단면도.

Claims (1)

  1. 본문에 상술하고 도면에 도시한 바와 같이, 서로 붙어서 그 사이에 접합부를 형성하는 최소한 제1영역과 제2영역을 포함하는 것으로서 제1영역(26,68,112, 또는 28,70,114)이 실리콘과 불소를 포함하는 부정형 합금으로 만들어짐을 특징으로 하는 다이오드.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019800004729A 1979-12-13 1980-12-12 다이오드 및 그것을 이용한 rom 또는 eeprom KR830004681A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US10301179A 1979-12-13 1979-12-13
US103011 1979-12-13
US20827480A 1980-11-19 1980-11-19
US208274 1980-11-19

Publications (1)

Publication Number Publication Date
KR830004681A true KR830004681A (ko) 1983-07-16

Family

ID=26799984

Family Applications (2)

Application Number Title Priority Date Filing Date
KR8004727A KR850001045B1 (en) 1979-12-13 1980-12-12 A programmable cell for use in programmable electronic arrays
KR1019800004729A KR830004681A (ko) 1979-12-13 1980-12-12 다이오드 및 그것을 이용한 rom 또는 eeprom

Family Applications Before (1)

Application Number Title Priority Date Filing Date
KR8004727A KR850001045B1 (en) 1979-12-13 1980-12-12 A programmable cell for use in programmable electronic arrays

Country Status (15)

Country Link
JP (3) JPS56100464A (ko)
KR (2) KR850001045B1 (ko)
AU (1) AU543740B2 (ko)
BE (1) BE886631A (ko)
CA (3) CA1155239A (ko)
DE (1) DE3046701A1 (ko)
FR (1) FR2475295A1 (ko)
GB (1) GB2066566B (ko)
IL (1) IL61671A (ko)
IT (1) IT1194001B (ko)
MX (1) MX150800A (ko)
NL (1) NL8006771A (ko)
SE (1) SE8008739L (ko)
SG (1) SG72784G (ko)
ZA (3) ZA807761B (ko)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3277665D1 (en) * 1981-08-07 1987-12-17 British Petroleum Co Plc Non-volatile electrically programmable memory device
JPS5867066A (ja) * 1981-10-16 1983-04-21 Semiconductor Energy Lab Co Ltd 絶緑ゲート型電界効果半導体装置の作製方法
JPS59501988A (ja) * 1982-11-11 1984-11-29 ハイドリル　カンパニ− 安全弁装置及び方法
AU562641B2 (en) * 1983-01-18 1987-06-18 Energy Conversion Devices Inc. Electronic matrix array
US4545111A (en) * 1983-01-18 1985-10-08 Energy Conversion Devices, Inc. Method for making, parallel preprogramming or field programming of electronic matrix arrays
US4677742A (en) * 1983-01-18 1987-07-07 Energy Conversion Devices, Inc. Electronic matrix arrays and method for making the same
US4569121A (en) * 1983-03-07 1986-02-11 Signetics Corporation Method of fabricating a programmable read-only memory cell incorporating an antifuse utilizing deposition of amorphous semiconductor layer
US4569120A (en) * 1983-03-07 1986-02-11 Signetics Corporation Method of fabricating a programmable read-only memory cell incorporating an antifuse utilizing ion implantation
JPS60153552U (ja) * 1984-03-24 1985-10-12 沖電気工業株式会社 Ｐｎ接合半導体装置
US4667217A (en) * 1985-04-19 1987-05-19 Ncr Corporation Two bit vertically/horizontally integrated memory cell
US4914055A (en) * 1989-08-24 1990-04-03 Advanced Micro Devices, Inc. Semiconductor antifuse structure and method
GB9113795D0 (en) * 1991-06-26 1991-08-14 Philips Electronic Associated Thin-film rom devices and their manufacture
GB9117680D0 (en) * 1991-08-16 1991-10-02 Philips Electronic Associated Electronic matrix array devices
JP3501416B2 (ja) * 1994-04-28 2004-03-02 忠弘 大見 半導体装置
JP2500484B2 (ja) * 1994-07-11 1996-05-29 ソニー株式会社 薄膜トランジスタの製法
US6646912B2 (en) * 2001-06-05 2003-11-11 Hewlett-Packard Development Company, Lp. Non-volatile memory
US6599796B2 (en) * 2001-06-29 2003-07-29 Hewlett-Packard Development Company, L.P. Apparatus and fabrication process to reduce crosstalk in pirm memory array
JP3948292B2 (ja) 2002-02-01 2007-07-25 株式会社日立製作所 半導体記憶装置及びその製造方法
US7462857B2 (en) * 2002-09-19 2008-12-09 Sharp Kabushiki Kaisha Memory device including resistance-changing function body
JP4541651B2 (ja) * 2003-03-13 2010-09-08 シャープ株式会社 抵抗変化機能体、メモリおよびその製造方法並びに半導体装置および電子機器
JP4634014B2 (ja) * 2003-05-22 2011-02-16 株式会社日立製作所 半導体記憶装置
KR100504700B1 (ko) * 2003-06-04 2005-08-03 삼성전자주식회사 고집적 상변환 램
JP4767653B2 (ja) * 2004-10-22 2011-09-07 株式会社半導体エネルギー研究所 半導体装置及び無線チップ
KR101258672B1 (ko) 2004-10-22 2013-04-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치
JP2008118108A (ja) * 2006-08-25 2008-05-22 Qimonda Ag 情報記憶素子およびその製造方法
JP2007019559A (ja) * 2006-10-23 2007-01-25 Hitachi Ltd 半導体記憶装置及びその製造方法
US7915603B2 (en) * 2006-10-27 2011-03-29 Qimonda Ag Modifiable gate stack memory element
WO2008155724A1 (en) * 2007-06-20 2008-12-24 Taiwan Semiconductor Manufacturing Co., Ltd. An electronic component, and a method of manufacturing an electronic component
US9716225B2 (en) 2014-09-03 2017-07-25 Micron Technology, Inc. Memory cells including dielectric materials, memory devices including the memory cells, and methods of forming same

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51122382A (en) * 1975-04-18 1976-10-26 Fujitsu Ltd Semiconductor device
US4064521A (en) * 1975-07-28 1977-12-20 Rca Corporation Semiconductor device having a body of amorphous silicon
JPS5819138B2 (ja) * 1977-01-11 1983-04-16 日本電信電話株式会社 半導体装置
JPS53144274A (en) * 1977-05-23 1978-12-15 Hitachi Ltd Semiconductor device and its manufacture
JPS5457879A (en) * 1977-10-15 1979-05-10 Cho Lsi Gijutsu Kenkyu Kumiai Semiconductor
US4177475A (en) * 1977-10-31 1979-12-04 Burroughs Corporation High temperature amorphous memory device for an electrically alterable read-only memory
DE2909197A1 (de) * 1978-03-20 1979-10-04 Texas Instruments Inc Verfahren zur herstellung eines festspeichers und festspeichermatrix

Also Published As

Publication number Publication date
AU543740B2 (en) 1985-05-02
ZA807762B (en) 1981-12-30
JPS56103474A (en) 1981-08-18
GB2066566B (en) 1984-07-04
JPS56115571A (en) 1981-09-10
CA1162327A (en) 1984-02-14
CA1161970A (en) 1984-02-07
FR2475295A1 (fr) 1981-08-07
AU6531580A (en) 1981-06-18
SG72784G (en) 1985-03-29
IL61671A0 (en) 1981-01-30
CA1155239A (en) 1983-10-11
NL8006771A (nl) 1981-07-16
GB2066566A (en) 1981-07-08
IL61671A (en) 1984-04-30
IT1194001B (it) 1988-08-31
BE886631A (fr) 1981-04-01
SE8008739L (sv) 1981-06-14
KR850001045B1 (en) 1985-07-19
JPS56100464A (en) 1981-08-12
KR830004679A (ko) 1983-07-16
MX150800A (es) 1984-07-19
ZA807761B (en) 1981-12-30
ZA807763B (en) 1981-12-30
DE3046701A1 (de) 1981-10-15
IT8026643A0 (it) 1980-12-12

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