KR910017650A - P+ s/d를 이용한 포토 검출기의 구조 - Google Patents
P+ s/d를 이용한 포토 검출기의 구조 Download PDFInfo
- Publication number
- KR910017650A KR910017650A KR1019900003070A KR900003070A KR910017650A KR 910017650 A KR910017650 A KR 910017650A KR 1019900003070 A KR1019900003070 A KR 1019900003070A KR 900003070 A KR900003070 A KR 900003070A KR 910017650 A KR910017650 A KR 910017650A
- Authority
- KR
- South Korea
- Prior art keywords
- photo detector
- detector structure
- region
- ion implantation
- photosite
- Prior art date
Links
- 238000005468 ion implantation Methods 0.000 claims 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
- H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 5도는 본 발명의 평면도, 제 6도는 제 5도의 A-A선 단면도로 디프리션 영역을 나타내기 위한 도면.
Claims (1)
- P-웰(1)에 N+포토사이트 이온주입으로 N+영역(2)을 형성하고 P+이온주입으로 S/D(3)와 함께 수광부 표면에 P+S/D(3)영역까지 오버랩되게 디프리션 영역을 형성함을 특징으로 하는 P+S/D를 이용한 포토 검출기의 구조.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019900003070A KR930000884B1 (ko) | 1990-03-08 | 1990-03-08 | 포토다이오드 |
GB9102177A GB2241826A (en) | 1990-03-08 | 1991-02-01 | Photo diode |
JP3031453A JP2701180B2 (ja) | 1990-03-08 | 1991-02-01 | フォトダイオード |
DE4107523A DE4107523A1 (de) | 1990-03-08 | 1991-03-08 | Photodiode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019900003070A KR930000884B1 (ko) | 1990-03-08 | 1990-03-08 | 포토다이오드 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR910017650A true KR910017650A (ko) | 1991-11-05 |
KR930000884B1 KR930000884B1 (ko) | 1993-02-08 |
Family
ID=19296776
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019900003070A KR930000884B1 (ko) | 1990-03-08 | 1990-03-08 | 포토다이오드 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP2701180B2 (ko) |
KR (1) | KR930000884B1 (ko) |
DE (1) | DE4107523A1 (ko) |
GB (1) | GB2241826A (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20030090867A (ko) * | 2002-05-22 | 2003-12-01 | 동부전자 주식회사 | 시모스 이미지 센서 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3366802A (en) * | 1965-04-06 | 1968-01-30 | Fairchild Camera Instr Co | Field effect transistor photosensitive modulator |
WO1989006052A1 (en) * | 1987-12-14 | 1989-06-29 | Santa Barbara Research Center | Reticulated junction photodiode having enhanced responsivity to short wavelength radiation |
-
1990
- 1990-03-08 KR KR1019900003070A patent/KR930000884B1/ko not_active IP Right Cessation
-
1991
- 1991-02-01 GB GB9102177A patent/GB2241826A/en not_active Withdrawn
- 1991-02-01 JP JP3031453A patent/JP2701180B2/ja not_active Expired - Fee Related
- 1991-03-08 DE DE4107523A patent/DE4107523A1/de not_active Ceased
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20030090867A (ko) * | 2002-05-22 | 2003-12-01 | 동부전자 주식회사 | 시모스 이미지 센서 |
Also Published As
Publication number | Publication date |
---|---|
GB2241826A (en) | 1991-09-11 |
JP2701180B2 (ja) | 1998-01-21 |
GB9102177D0 (en) | 1991-03-20 |
DE4107523A1 (de) | 1991-09-12 |
KR930000884B1 (ko) | 1993-02-08 |
JPH04217365A (ja) | 1992-08-07 |
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