KR910017650A - P+ s/d를 이용한 포토 검출기의 구조 - Google Patents

P+ s/d를 이용한 포토 검출기의 구조 Download PDF

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Publication number
KR910017650A
KR910017650A KR1019900003070A KR900003070A KR910017650A KR 910017650 A KR910017650 A KR 910017650A KR 1019900003070 A KR1019900003070 A KR 1019900003070A KR 900003070 A KR900003070 A KR 900003070A KR 910017650 A KR910017650 A KR 910017650A
Authority
KR
South Korea
Prior art keywords
photo detector
detector structure
region
ion implantation
photosite
Prior art date
Application number
KR1019900003070A
Other languages
English (en)
Other versions
KR930000884B1 (ko
Inventor
정원영
Original Assignee
문정환
금성일렉트론 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 문정환, 금성일렉트론 주식회사 filed Critical 문정환
Priority to KR1019900003070A priority Critical patent/KR930000884B1/ko
Priority to GB9102177A priority patent/GB2241826A/en
Priority to JP3031453A priority patent/JP2701180B2/ja
Priority to DE4107523A priority patent/DE4107523A1/de
Publication of KR910017650A publication Critical patent/KR910017650A/ko
Application granted granted Critical
Publication of KR930000884B1 publication Critical patent/KR930000884B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
    • H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

내용 없음

Description

P+S/D를 이용한 포토 검출기의 구조
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 5도는 본 발명의 평면도, 제 6도는 제 5도의 A-A선 단면도로 디프리션 영역을 나타내기 위한 도면.

Claims (1)

  1. P-웰(1)에 N+포토사이트 이온주입으로 N+영역(2)을 형성하고 P+이온주입으로 S/D(3)와 함께 수광부 표면에 P+S/D(3)영역까지 오버랩되게 디프리션 영역을 형성함을 특징으로 하는 P+S/D를 이용한 포토 검출기의 구조.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900003070A 1990-03-08 1990-03-08 포토다이오드 KR930000884B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1019900003070A KR930000884B1 (ko) 1990-03-08 1990-03-08 포토다이오드
GB9102177A GB2241826A (en) 1990-03-08 1991-02-01 Photo diode
JP3031453A JP2701180B2 (ja) 1990-03-08 1991-02-01 フォトダイオード
DE4107523A DE4107523A1 (de) 1990-03-08 1991-03-08 Photodiode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900003070A KR930000884B1 (ko) 1990-03-08 1990-03-08 포토다이오드

Publications (2)

Publication Number Publication Date
KR910017650A true KR910017650A (ko) 1991-11-05
KR930000884B1 KR930000884B1 (ko) 1993-02-08

Family

ID=19296776

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900003070A KR930000884B1 (ko) 1990-03-08 1990-03-08 포토다이오드

Country Status (4)

Country Link
JP (1) JP2701180B2 (ko)
KR (1) KR930000884B1 (ko)
DE (1) DE4107523A1 (ko)
GB (1) GB2241826A (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030090867A (ko) * 2002-05-22 2003-12-01 동부전자 주식회사 시모스 이미지 센서

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3366802A (en) * 1965-04-06 1968-01-30 Fairchild Camera Instr Co Field effect transistor photosensitive modulator
WO1989006052A1 (en) * 1987-12-14 1989-06-29 Santa Barbara Research Center Reticulated junction photodiode having enhanced responsivity to short wavelength radiation

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030090867A (ko) * 2002-05-22 2003-12-01 동부전자 주식회사 시모스 이미지 센서

Also Published As

Publication number Publication date
GB2241826A (en) 1991-09-11
JPH04217365A (ja) 1992-08-07
DE4107523A1 (de) 1991-09-12
JP2701180B2 (ja) 1998-01-21
GB9102177D0 (en) 1991-03-20
KR930000884B1 (ko) 1993-02-08

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