DE69108121D1 - Dotiertes KTiOP04 mit niedriger Leitfähigkeit und darauf basierende Bauelemente. - Google Patents
Dotiertes KTiOP04 mit niedriger Leitfähigkeit und darauf basierende Bauelemente.Info
- Publication number
- DE69108121D1 DE69108121D1 DE69108121T DE69108121T DE69108121D1 DE 69108121 D1 DE69108121 D1 DE 69108121D1 DE 69108121 T DE69108121 T DE 69108121T DE 69108121 T DE69108121 T DE 69108121T DE 69108121 D1 DE69108121 D1 DE 69108121D1
- Authority
- DE
- Germany
- Prior art keywords
- ktiop04
- doped
- low conductivity
- components based
- conductivity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/355—Non-linear optics characterised by the materials used
- G02F1/3551—Crystals
- G02F1/3553—Crystals having the formula MTiOYO4, where M=K, Rb, TI, NH4 or Cs and Y=P or As, e.g. KTP
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/14—Phosphates
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B9/00—Single-crystal growth from melt solutions using molten solvents
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
Landscapes
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nonlinear Science (AREA)
- Metallurgy (AREA)
- Optics & Photonics (AREA)
- Materials Engineering (AREA)
- General Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/553,475 US5879590A (en) | 1990-07-13 | 1990-07-13 | Low conductivity, doped KTIOPO4 and devices based thereon |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69108121D1 true DE69108121D1 (de) | 1995-04-20 |
DE69108121T2 DE69108121T2 (de) | 1995-10-26 |
Family
ID=24209550
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69108121T Expired - Fee Related DE69108121T2 (de) | 1990-07-13 | 1991-07-03 | Dotiertes KTiOP04 mit niedriger Leitfähigkeit und darauf basierende Bauelemente. |
Country Status (4)
Country | Link |
---|---|
US (1) | US5879590A (de) |
EP (1) | EP0466260B1 (de) |
JP (1) | JP3335184B2 (de) |
DE (1) | DE69108121T2 (de) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5193097A (en) * | 1992-02-19 | 1993-03-09 | Crystal Technology, Inc. | Optical device using a cerium-doped KTP crystal |
US5326423A (en) * | 1992-03-25 | 1994-07-05 | E. I. Du Pont De Nemours And Company | Doped crystalline titanyl arsenates and preparation thereof |
US5311352A (en) * | 1992-12-23 | 1994-05-10 | E. I. Du Pont De Nemours And Company | Increasing the birefringence of KTP and its isomorphs for type II phase matching |
JPH08253393A (ja) * | 1995-01-19 | 1996-10-01 | Hoya Corp | Ktp固溶体単結晶及びその製造方法 |
JPH09511846A (ja) * | 1995-02-07 | 1997-11-25 | エルディティ ゲーエムベーハー ウント シーオー.レーザー−ディスプレー−テクノロギー カーゲー | チャネル導波管およびその応用 |
DE69735956T2 (de) * | 1996-01-12 | 2007-05-10 | Cobolt Ab | Methode zur polarisation optischer kristalle |
GB0017516D0 (en) * | 2000-07-17 | 2000-08-30 | Isis Innovation | Nonlinear optical materials |
US6839489B2 (en) * | 2003-03-11 | 2005-01-04 | Advr, Inc. | Micro-electrodes for electro-optic control of optical waveguides |
US20050022720A1 (en) * | 2003-07-31 | 2005-02-03 | Kolis Joseph W. | Acentric orthorhombic lanthanide borate crystals, method for making, and applications thereof |
US20050022721A1 (en) * | 2003-07-31 | 2005-02-03 | Kolis Joseph W. | Acentric, rhombohedral lanthanide borate crystals, method for making, and applications thereof |
US7317859B2 (en) * | 2004-08-25 | 2008-01-08 | Advanced Photonics Crystals | Periodically poled optical crystals and process for the production thereof |
US8389099B1 (en) | 2007-06-01 | 2013-03-05 | Rubicon Technology, Inc. | Asymmetrical wafer configurations and method for creating the same |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3949323A (en) * | 1974-03-14 | 1976-04-06 | E. I. Du Pont De Nemours & Company | Crystals of (K, Rb, NH4)TiO(P, As)O4 and their use in electrooptic devices |
FR2585345B1 (fr) * | 1985-07-26 | 1989-08-18 | Centre Nat Rech Scient | Procede de synthese en flux de cristaux du type du ktiopo4 ou monophosphate de potassium et de titanyle |
US4740265A (en) * | 1987-01-08 | 1988-04-26 | E. I. Du Pont De Nemours And Company | Process for producing an optical waveguide and the product therefrom |
US4766954A (en) * | 1987-01-08 | 1988-08-30 | E. I. Du Pont De Nemours And Company | Process for producing an optical waveguide |
US4935844A (en) * | 1987-01-13 | 1990-06-19 | Ian Burn | Low dielectric constant compositions |
US4917451A (en) * | 1988-01-19 | 1990-04-17 | E. I. Dupont De Nemours And Company | Waveguide structure using potassium titanyl phosphate |
JPH02157193A (ja) * | 1988-12-12 | 1990-06-15 | Hamamatsu Photonics Kk | KTiOPO↓4単結晶の合成方法 |
US5084206A (en) * | 1990-02-02 | 1992-01-28 | E. I. Du Pont De Nemours And Company | Doped crystalline compositions and a method for preparation thereof |
US5326423A (en) * | 1992-03-25 | 1994-07-05 | E. I. Du Pont De Nemours And Company | Doped crystalline titanyl arsenates and preparation thereof |
-
1990
- 1990-07-13 US US07/553,475 patent/US5879590A/en not_active Expired - Fee Related
-
1991
- 1991-07-03 EP EP91201714A patent/EP0466260B1/de not_active Expired - Lifetime
- 1991-07-03 DE DE69108121T patent/DE69108121T2/de not_active Expired - Fee Related
- 1991-07-10 JP JP19505091A patent/JP3335184B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE69108121T2 (de) | 1995-10-26 |
JPH04254498A (ja) | 1992-09-09 |
JP3335184B2 (ja) | 2002-10-15 |
EP0466260A1 (de) | 1992-01-15 |
EP0466260B1 (de) | 1995-03-15 |
US5879590A (en) | 1999-03-09 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: KONINKLIJKE PHILIPS ELECTRONICS N.V., EINDHOVEN, N |
|
8320 | Willingness to grant licences declared (paragraph 23) | ||
8328 | Change in the person/name/address of the agent |
Representative=s name: VOLMER, G., DIPL.-ING., PAT.-ANW., 52066 AACHEN |
|
8339 | Ceased/non-payment of the annual fee |