GB2241826A - Photo diode - Google Patents
Photo diode Download PDFInfo
- Publication number
- GB2241826A GB2241826A GB9102177A GB9102177A GB2241826A GB 2241826 A GB2241826 A GB 2241826A GB 9102177 A GB9102177 A GB 9102177A GB 9102177 A GB9102177 A GB 9102177A GB 2241826 A GB2241826 A GB 2241826A
- Authority
- GB
- United Kingdom
- Prior art keywords
- type
- type region
- photo diode
- region
- regions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000000758 substrate Substances 0.000 claims description 5
- 150000002500 ions Chemical class 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 238000005468 ion implantation Methods 0.000 abstract description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 9
- 229920005591 polysilicon Polymers 0.000 description 9
- 238000002955 isolation Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 1
- -1 phosphorous ions Chemical class 0.000 description 1
- 230000032554 response to blue light Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
- H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019900003070A KR930000884B1 (ko) | 1990-03-08 | 1990-03-08 | 포토다이오드 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| GB9102177D0 GB9102177D0 (en) | 1991-03-20 |
| GB2241826A true GB2241826A (en) | 1991-09-11 |
Family
ID=19296776
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB9102177A Withdrawn GB2241826A (en) | 1990-03-08 | 1991-02-01 | Photo diode |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2701180B2 (ko) |
| KR (1) | KR930000884B1 (ko) |
| DE (1) | DE4107523A1 (ko) |
| GB (1) | GB2241826A (ko) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20030090867A (ko) * | 2002-05-22 | 2003-12-01 | 동부전자 주식회사 | 시모스 이미지 센서 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1989006052A1 (en) * | 1987-12-14 | 1989-06-29 | Santa Barbara Research Center | Reticulated junction photodiode having enhanced responsivity to short wavelength radiation |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3366802A (en) * | 1965-04-06 | 1968-01-30 | Fairchild Camera Instr Co | Field effect transistor photosensitive modulator |
-
1990
- 1990-03-08 KR KR1019900003070A patent/KR930000884B1/ko not_active IP Right Cessation
-
1991
- 1991-02-01 GB GB9102177A patent/GB2241826A/en not_active Withdrawn
- 1991-02-01 JP JP3031453A patent/JP2701180B2/ja not_active Expired - Fee Related
- 1991-03-08 DE DE4107523A patent/DE4107523A1/de not_active Ceased
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1989006052A1 (en) * | 1987-12-14 | 1989-06-29 | Santa Barbara Research Center | Reticulated junction photodiode having enhanced responsivity to short wavelength radiation |
Also Published As
| Publication number | Publication date |
|---|---|
| KR910017650A (ko) | 1991-11-05 |
| JP2701180B2 (ja) | 1998-01-21 |
| GB9102177D0 (en) | 1991-03-20 |
| DE4107523A1 (de) | 1991-09-12 |
| KR930000884B1 (ko) | 1993-02-08 |
| JPH04217365A (ja) | 1992-08-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10622263B2 (en) | Semiconductor device having SOI substrate and first and second diffusion layer | |
| US6023081A (en) | Semiconductor image sensor | |
| US5024965A (en) | Manufacturing high speed low leakage radiation hardened CMOS/SOI devices | |
| US4373167A (en) | Solid state image sensor with overflow protection and high resolution | |
| US4142925A (en) | Method of making silicon-insulator-polysilicon infrared image device utilizing epitaxial deposition and selective etching | |
| KR100450670B1 (ko) | 포토 다이오드를 갖는 이미지 센서 및 그 제조방법 | |
| EP0809296A3 (en) | Method of fabricating a semiconductor device with protection means | |
| US6514785B1 (en) | CMOS image sensor n-type pin-diode structure | |
| JP7162902B2 (ja) | 光電変換素子及び固体撮像装置 | |
| US20010039068A1 (en) | CMOS image sensor and method for fabricating the same | |
| US3996600A (en) | Charge coupled optical scanner with blooming control | |
| US6876016B2 (en) | Invention for reducing dark current of CMOS image sensor with new structure | |
| GB2241826A (en) | Photo diode | |
| US20050158907A1 (en) | Image sensor device and method of fabricating the same | |
| FR2575333A1 (fr) | Dispositif de protection d'un circuit integre contre les decharges electrostatiques | |
| US6627475B1 (en) | Buried photodiode structure for CMOS image sensor | |
| KR100872290B1 (ko) | 씨모스 이미지 센서 및 그 제조 방법 | |
| JP2901328B2 (ja) | 固体撮像素子 | |
| JP2955983B2 (ja) | 赤外線検出器の製造方法 | |
| JPS6018957A (ja) | 固体撮像素子 | |
| JPH10150180A (ja) | 固体撮像装置 | |
| WO2023189964A1 (ja) | 半導体装置、および半導体装置の製造方法 | |
| EP0515833B1 (en) | Semiconductor integrated circuit device having wells biased with different voltage levels | |
| JP2000260972A (ja) | 固体撮像装置およびその製造方法 | |
| JPH0697416A (ja) | 固体撮像装置及びその製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |