KR920010938A - 고체 촬상 장치 - Google Patents

고체 촬상 장치 Download PDF

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Publication number
KR920010938A
KR920010938A KR1019910020328A KR910020328A KR920010938A KR 920010938 A KR920010938 A KR 920010938A KR 1019910020328 A KR1019910020328 A KR 1019910020328A KR 910020328 A KR910020328 A KR 910020328A KR 920010938 A KR920010938 A KR 920010938A
Authority
KR
South Korea
Prior art keywords
solid
imaging device
state imaging
shielding layer
transfer electrode
Prior art date
Application number
KR1019910020328A
Other languages
English (en)
Other versions
KR100223503B1 (ko
Inventor
히로미찌 마쯔이
가즈오미 에조에
도시로 구루스
Original Assignee
오오가 노리오
소니 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 오오가 노리오, 소니 가부시끼가이샤 filed Critical 오오가 노리오
Publication of KR920010938A publication Critical patent/KR920010938A/ko
Application granted granted Critical
Publication of KR100223503B1 publication Critical patent/KR100223503B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H01L31/02164—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers, cold shields for infrared detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14831—Area CCD imagers

Abstract

내용 없음

Description

고체 촬상 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 고체 촬상 장치의 한 예의 주요부 단면도, 제2도는 상기 한예의 평면도, 제3도는 상기 한예의 기판의 표면에 있어서의 레이아웃을 도시한 도면.

Claims (1)

  1. 수직 방향 화소간 분리 영역상의 전송 전극상에 절연막을 끼워서 차광층이 형성된 고체 촬상 장치에 있어서, 상기 차광층이 상기 전송 전극의 측면부 및 수광 영역의 상기 수직 방향 화소간 분리 영역에 인접하는 주변부를 피복해서 이루어지는 것을 특징으로 하는 고체 촬상 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개되는 것임.
KR1019910020328A 1990-11-16 1991-11-15 고체 촬상 장치 KR100223503B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP90-308513 1990-11-16
JP2308513A JPH04181774A (ja) 1990-11-16 1990-11-16 固体撮像装置

Publications (2)

Publication Number Publication Date
KR920010938A true KR920010938A (ko) 1992-06-27
KR100223503B1 KR100223503B1 (ko) 1999-10-15

Family

ID=17981933

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910020328A KR100223503B1 (ko) 1990-11-16 1991-11-15 고체 촬상 장치

Country Status (5)

Country Link
US (1) US5351081A (ko)
EP (1) EP0487989B1 (ko)
JP (1) JPH04181774A (ko)
KR (1) KR100223503B1 (ko)
DE (1) DE69119364T2 (ko)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3456000B2 (ja) * 1993-05-17 2003-10-14 ソニー株式会社 固体撮像素子及びその製造方法
US5489994A (en) * 1993-10-29 1996-02-06 Eastman Kodak Company Integrated apertures on a full frame CCD image sensor
JP3003597B2 (ja) * 1996-11-18 2000-01-31 日本電気株式会社 固体撮像素子
US6087685A (en) * 1996-12-12 2000-07-11 Sony Corporation Solid-state imaging device
JP3219036B2 (ja) 1997-11-11 2001-10-15 日本電気株式会社 固体撮像装置

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58142682A (ja) * 1982-02-18 1983-08-24 Nec Corp 固体撮像素子
JPH0666914B2 (ja) * 1984-01-10 1994-08-24 シャープ株式会社 固体撮像装置
US4689687A (en) * 1984-11-13 1987-08-25 Hitachi, Ltd. Charge transfer type solid-state imaging device
JPS6262553A (ja) * 1985-09-12 1987-03-19 Toshiba Corp 固体撮像装置
JPH0828496B2 (ja) * 1987-03-31 1996-03-21 株式会社東芝 固体撮像装置
JPS648664A (en) * 1987-06-30 1989-01-12 Toshiba Corp Solid-state image sensing device and manufacture thereof
JPS6415969A (en) * 1987-07-09 1989-01-19 Toshiba Corp Solid-state image sensing device and manufacture thereof
JPH0666452B2 (ja) * 1987-09-04 1994-08-24 株式会社東芝 固体撮像装置の製造方法
JPH01169465A (ja) * 1987-12-25 1989-07-04 Canon Inc 開閉部材のロック機構
JPH01280354A (ja) * 1988-05-06 1989-11-10 Nec Corp 固体撮像素子
JPH0214570A (ja) * 1988-07-01 1990-01-18 Matsushita Electron Corp 固体撮像装置及びその製造方法
JPH02304976A (ja) * 1989-05-19 1990-12-18 Nec Corp 固体撮像素子
JPH0360159A (ja) * 1989-07-28 1991-03-15 Nec Corp 固体撮像素子
JPH03161970A (ja) * 1989-11-21 1991-07-11 Toshiba Corp 固体撮像装置

Also Published As

Publication number Publication date
EP0487989A3 (en) 1992-09-09
EP0487989B1 (en) 1996-05-08
EP0487989A2 (en) 1992-06-03
JPH04181774A (ja) 1992-06-29
US5351081A (en) 1994-09-27
DE69119364D1 (de) 1996-06-13
DE69119364T2 (de) 1997-01-02
KR100223503B1 (ko) 1999-10-15

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