KR890013801A - 청색 감도 개선용 고체 영상 소자 - Google Patents

청색 감도 개선용 고체 영상 소자 Download PDF

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Publication number
KR890013801A
KR890013801A KR1019880001579A KR880001579A KR890013801A KR 890013801 A KR890013801 A KR 890013801A KR 1019880001579 A KR1019880001579 A KR 1019880001579A KR 880001579 A KR880001579 A KR 880001579A KR 890013801 A KR890013801 A KR 890013801A
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KR
South Korea
Prior art keywords
solid
state image
image device
blue sensitivity
type
Prior art date
Application number
KR1019880001579A
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English (en)
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KR910002817B1 (ko
Inventor
윤주영
Original Assignee
강진구
삼성반도체통신 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 강진구, 삼성반도체통신 주식회사 filed Critical 강진구
Priority to KR1019880001579A priority Critical patent/KR910002817B1/ko
Publication of KR890013801A publication Critical patent/KR890013801A/ko
Application granted granted Critical
Publication of KR910002817B1 publication Critical patent/KR910002817B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/14—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

내용 없음.

Description

청색 감도 개선용 고체 영상 소자
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명의 고체 영상 소자의 단면도,
제3도는 제1도 A-A′선의 전위 분포도.
제4도는 제2도의 B-B′선의 전위분포도이다.

Claims (1)

  1. N형 포토다이오드(1) 및 CCD채널(2)과 P형 웰(3)로 구성되는 고체영상 소자에 있어서, N형 포토다이오드(1)상에 고농도 P형 층(5)을 형성하고 N형 포토다이오드(1) 및 채널(2)을 포함하는 P형층(6)을 추가형성하여서 된 청색 감도 개선용 고체 영상 소자.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019880001579A 1988-02-15 1988-02-15 청색 감도 개선용 고체 영상 소자 KR910002817B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019880001579A KR910002817B1 (ko) 1988-02-15 1988-02-15 청색 감도 개선용 고체 영상 소자

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019880001579A KR910002817B1 (ko) 1988-02-15 1988-02-15 청색 감도 개선용 고체 영상 소자

Publications (2)

Publication Number Publication Date
KR890013801A true KR890013801A (ko) 1989-09-26
KR910002817B1 KR910002817B1 (ko) 1991-05-04

Family

ID=19272263

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880001579A KR910002817B1 (ko) 1988-02-15 1988-02-15 청색 감도 개선용 고체 영상 소자

Country Status (1)

Country Link
KR (1) KR910002817B1 (ko)

Also Published As

Publication number Publication date
KR910002817B1 (ko) 1991-05-04

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