KR870002668A - 고체 촬상소자 - Google Patents

고체 촬상소자 Download PDF

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Publication number
KR870002668A
KR870002668A KR1019860001387A KR860001387A KR870002668A KR 870002668 A KR870002668 A KR 870002668A KR 1019860001387 A KR1019860001387 A KR 1019860001387A KR 860001387 A KR860001387 A KR 860001387A KR 870002668 A KR870002668 A KR 870002668A
Authority
KR
South Korea
Prior art keywords
solid
state image
optical signal
image sensor
electric
Prior art date
Application number
KR1019860001387A
Other languages
English (en)
Other versions
KR890004983B1 (ko
Inventor
마다 마사 후미 기
따마 마사 후미 기
와끼 마사 오 야마
와끼 마사오 야마
이 소또 쥬 아사
Original Assignee
미쓰비시 뎅기 가부시끼가이샤
시기 모리야
미쓰비시뎅기 가부시끼 가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 미쓰비시 뎅기 가부시끼가이샤, 시기 모리야, 미쓰비시뎅기 가부시끼 가이샤 filed Critical 미쓰비시 뎅기 가부시끼가이샤
Publication of KR870002668A publication Critical patent/KR870002668A/ko
Application granted granted Critical
Publication of KR890004983B1 publication Critical patent/KR890004983B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14887—Blooming suppression
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14831—Area CCD imagers

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

내용 없음

Description

고체 촬상소자
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 일 실시예인 고체 촬상소자의 화소(畵素)의 단면을 나타내는 도면.
제3(a)도 및 제3(b)도는 제2도에 나타낸 화소의 동작을 설명하기 위한 전위도.
* 도면의 주요부분에 대한 부호의 설명
1 : 반도체 기판 2 : 게이트전극
3 : 매립채널형 수직 전하 결합소자 5 : 광검출기
6 : 소자간 분리 불순물 영역 7 : 차광막
8 : 드레시 홀드 제어용 불순물 영역(도면중 동일부호는 동일 또는 상당부분을 나타낸다.)

Claims (1)

  1. 광 신호를 검출하는 광신호 검출수단과 전기 광신호 검출수단으로부터의 신호전하를 전송하는 전하 전송수단과 전기 광신호 검출수단에서 전기전하전 송수단으로의 신호전하의 전송을 제어하는 제어영역을 갖춘 고체 촬상소자에 있어서 전기 제어영역은 확산 자기정합에 의해 형성되는 것을 특징으로 하는 고체 촬상소자.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019860001387A 1985-08-13 1986-02-27 고체 촬상소자 KR890004983B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP179650 1985-08-13
JP60179650A JPS6239055A (ja) 1985-08-13 1985-08-13 固体撮像素子
JP60-179650 1985-08-13

Publications (2)

Publication Number Publication Date
KR870002668A true KR870002668A (ko) 1987-04-06
KR890004983B1 KR890004983B1 (ko) 1989-12-02

Family

ID=16069479

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019860001387A KR890004983B1 (ko) 1985-08-13 1986-02-27 고체 촬상소자

Country Status (4)

Country Link
US (1) US4831426A (ko)
EP (1) EP0212794A1 (ko)
JP (1) JPS6239055A (ko)
KR (1) KR890004983B1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101694954B1 (ko) 2016-09-07 2017-01-10 주식회사 장인 머리장식용 비녀

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5262661A (en) * 1990-06-25 1993-11-16 Matsushita Electric Industrial Co., Ltd. Solid-state image pickup device, having increased charge storage and improved electronic shutter operation
JPH04260370A (ja) * 1991-02-14 1992-09-16 Sony Corp 固体撮像装置
JPH0567767A (ja) * 1991-03-06 1993-03-19 Matsushita Electron Corp 固体撮像装置およびその製造方法
JPH04286361A (ja) * 1991-03-15 1992-10-12 Sony Corp 固体撮像装置
US5237185A (en) * 1991-04-19 1993-08-17 Canon Kabushiki Kaisha Image pickup apparatus with different gate thicknesses
JP2970158B2 (ja) * 1991-12-20 1999-11-02 日本電気株式会社 固体撮像装置の製造方法
KR100259063B1 (ko) * 1992-06-12 2000-06-15 김영환 Ccd 영상소자
JP3467858B2 (ja) * 1993-11-02 2003-11-17 ソニー株式会社 光電変換素子
KR0136933B1 (ko) * 1994-05-21 1998-04-24 문정환 씨씨디(ccd) 영상소자 및 제조방법
TW269744B (en) * 1994-08-08 1996-02-01 Matsushita Electron Co Ltd Solid-state imaging device and method of manufacturing the same
JP2797993B2 (ja) * 1995-02-21 1998-09-17 日本電気株式会社 固体撮像装置およびその製造方法
KR0162691B1 (ko) * 1995-06-03 1998-12-01 문정환 고체 촬상소자의 수광부 구조 및 그 제조방법
US6815791B1 (en) * 1997-02-10 2004-11-09 Fillfactory Buried, fully depletable, high fill factor photodiodes
US6100556A (en) * 1997-11-14 2000-08-08 Motorola Inc. Method of forming a semiconductor image sensor and structure
JP2000022121A (ja) * 1998-06-29 2000-01-21 Sony Corp 固体撮像素子
US6310366B1 (en) * 1999-06-16 2001-10-30 Micron Technology, Inc. Retrograde well structure for a CMOS imager
JP2003060192A (ja) * 2001-08-20 2003-02-28 Sony Corp 固体撮像装置の製造方法
US7808022B1 (en) 2005-03-28 2010-10-05 Cypress Semiconductor Corporation Cross talk reduction
US7750958B1 (en) 2005-03-28 2010-07-06 Cypress Semiconductor Corporation Pixel structure
US8476567B2 (en) 2008-09-22 2013-07-02 Semiconductor Components Industries, Llc Active pixel with precharging circuit
CN109166872B (zh) * 2018-08-31 2020-09-15 上海华力微电子有限公司 一种cmos图像传感器的形成方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6062154A (ja) * 1983-09-16 1985-04-10 Victor Co Of Japan Ltd 電荷転送装置
US5249226A (en) * 1992-03-02 1993-09-28 Advanced Micro Devices, Inc. Apparatus for controlling a current supply device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101694954B1 (ko) 2016-09-07 2017-01-10 주식회사 장인 머리장식용 비녀

Also Published As

Publication number Publication date
US4831426A (en) 1989-05-16
JPS6239055A (ja) 1987-02-20
EP0212794A1 (en) 1987-03-04
KR890004983B1 (ko) 1989-12-02

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