KR920017285A - 피닝전압이 낮은 고체 촬상소자의 구조 - Google Patents
피닝전압이 낮은 고체 촬상소자의 구조 Download PDFInfo
- Publication number
- KR920017285A KR920017285A KR1019910002472A KR910002472A KR920017285A KR 920017285 A KR920017285 A KR 920017285A KR 1019910002472 A KR1019910002472 A KR 1019910002472A KR 910002472 A KR910002472 A KR 910002472A KR 920017285 A KR920017285 A KR 920017285A
- Authority
- KR
- South Korea
- Prior art keywords
- solid state
- imaging device
- state imaging
- pinning voltage
- voltage
- Prior art date
Links
- 239000007787 solid Substances 0.000 title claims description 3
- 238000003384 imaging method Methods 0.000 title 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14831—Area CCD imagers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제3도는 본 발명의 피닝전압이 낮은 고체촬상 소자에 대한 수직단면도.
Claims (1)
- 실리콘 기판위에 웰을 형성한 후 채널에 이온 주입하여 매입채널 CCD을 형성하고, 웰과 채널스톱의 사이를 전기적으로 격리되도록 하기 위해 n-형층을 형성한후, 상기 p형 채널스톱에 피닝전압(-Vp)을 인가하여 게이트의 음전압한계를 낮출 수 있도록 구성한 것을 특징으로 하는 피닝전압이 낮은 고체촬상소장의 구조.※참고사항:최초출원 내용에 의하여 공개하는 것임.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019910002472A KR920017285A (ko) | 1991-02-13 | 1991-02-13 | 피닝전압이 낮은 고체 촬상소자의 구조 |
| DE4203837A DE4203837C2 (de) | 1991-02-13 | 1992-02-10 | CCD-Bildsensor mit verbessertem Speicher- und Transferwirkungsgrad |
| JP4026654A JP2572181B2 (ja) | 1991-02-13 | 1992-02-13 | Ｃｃｄ映像素子 |
| US08/098,566 US5313080A (en) | 1991-02-13 | 1993-07-27 | Structure of a CCD image sensor particularly on an interline transfer method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019910002472A KR920017285A (ko) | 1991-02-13 | 1991-02-13 | 피닝전압이 낮은 고체 촬상소자의 구조 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR920017285A true KR920017285A (ko) | 1992-09-26 |
Family
ID=19311130
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019910002472A KR920017285A (ko) | 1991-02-13 | 1991-02-13 | 피닝전압이 낮은 고체 촬상소자의 구조 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US5313080A (ko) |
| JP (1) | JP2572181B2 (ko) |
| KR (1) | KR920017285A (ko) |
| DE (1) | DE4203837C2 (ko) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4329838B4 (de) * | 1993-09-03 | 2005-09-22 | Hynix Semiconductor Inc., Ichon | Festkörper-Bildsensor |
| US6306676B1 (en) | 1996-04-04 | 2001-10-23 | Eastman Kodak Company | Method of making self-aligned, high-enegry implanted photodiode for solid-state image sensors |
| KR100300069B1 (ko) * | 1999-05-10 | 2001-09-26 | 김영환 | 반도체 소자 및 그 제조방법 |
| JP3980302B2 (ja) * | 2001-08-21 | 2007-09-26 | 富士フイルム株式会社 | 固体撮像装置およびその駆動方法 |
| US7253392B2 (en) * | 2003-09-08 | 2007-08-07 | Micron Technology, Inc. | Image sensor with photo diode gate |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL7311600A (nl) * | 1973-08-23 | 1975-02-25 | Philips Nv | Ladingsgekoppelde inrichting. |
| DE3168333D1 (en) * | 1980-09-19 | 1985-02-28 | Nec Corp | Semiconductor photoelectric converter |
| JPS6156583A (ja) * | 1984-08-27 | 1986-03-22 | Sharp Corp | 固体撮像装置 |
| JPH07107928B2 (ja) * | 1986-03-25 | 1995-11-15 | ソニー株式会社 | 固体撮像装置 |
-
1991
- 1991-02-13 KR KR1019910002472A patent/KR920017285A/ko not_active Application Discontinuation
-
1992
- 1992-02-10 DE DE4203837A patent/DE4203837C2/de not_active Expired - Lifetime
- 1992-02-13 JP JP4026654A patent/JP2572181B2/ja not_active Expired - Lifetime
-
1993
- 1993-07-27 US US08/098,566 patent/US5313080A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US5313080A (en) | 1994-05-17 |
| JPH0661469A (ja) | 1994-03-04 |
| DE4203837A1 (de) | 1992-08-20 |
| DE4203837C2 (de) | 2002-03-21 |
| JP2572181B2 (ja) | 1997-01-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| E601 | Decision to refuse application |