KR940001464A - Ccd 영상소자 - Google Patents

Ccd 영상소자 Download PDF

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Publication number
KR940001464A
KR940001464A KR1019920010135A KR920010135A KR940001464A KR 940001464 A KR940001464 A KR 940001464A KR 1019920010135 A KR1019920010135 A KR 1019920010135A KR 920010135 A KR920010135 A KR 920010135A KR 940001464 A KR940001464 A KR 940001464A
Authority
KR
South Korea
Prior art keywords
gate electrode
conductive
charge transfer
ccd image
present
Prior art date
Application number
KR1019920010135A
Other languages
English (en)
Inventor
박흥준
Original Assignee
문정환
금성일렉트론 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 문정환, 금성일렉트론 주식회사 filed Critical 문정환
Priority to KR1019920010135A priority Critical patent/KR940001464A/ko
Priority to US08/075,949 priority patent/US5406101A/en
Priority to JP5165012A priority patent/JPH06181225A/ja
Publication of KR940001464A publication Critical patent/KR940001464A/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76833—Buried channel CCD
    • H01L29/76841—Two-Phase CCD

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Electromagnetism (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

본 발명은 CCD영상소자에 관한 것으로, 종래의 CCD영상소자의 수평 전하전송영역(HCCD)에 있어서, 포텐셜 단차를 갖기 위해 제2게이트전극 하측의 BCCD영역에 이온주입으로 베리어층을 형성함으로 해서, 이온주입으로 생기는 차지 트랩으로 고속동작이 요구되는 CCD의 전하전달 효율이 저하되는 결점을 개선하기 위한 것이다.
이와같은 목적을 달성하기 위한 본 발명은 BCCD영역에 베리어층을 형성하지 않고, 클럭신호가 인가되는 제1게이트전극과 제2게이트전극의 도핑타입을 서로 반대되게 형성하지 않고, 클럭신호가 인가되는 제1게이트전극과 제2게이트전극의 도핑타입을 서로 반대되게 형성하여 포텐셜 단차를 갖도록 하였다.
따라서 고속동작이 요구되는 CCD에 있어서 전하전달 효율이 향상되었다.

Description

CCD 영상소자
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명에 의한 HCCD 구조 단면도 및 그에 따른 클럭신호의 타이밍과 포탠셜 프로파일.

Claims (1)

  1. 제1도전형 기판에 제2도전형 웰이 형성되고, 제2도전령 웰의 표면에 제1도전형 BCCD영역이 형성되고, 그 위에 절연막이 형성되고, 절연막위에 소정간격을 갖도록 제1도전형 게이트전극이 형 성되고. 제 1도전헝 전극 사이 사이에 제1도전형 게이트전극과 격리되어 제2도전헝 게이트전극이 형성되어 수평 전하전송영역이 이루어짐을 특징으로 하는 CCD영상소자.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019920010135A 1992-06-11 1992-06-11 Ccd 영상소자 KR940001464A (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1019920010135A KR940001464A (ko) 1992-06-11 1992-06-11 Ccd 영상소자
US08/075,949 US5406101A (en) 1992-06-11 1993-06-11 Horizontal charge coupled device
JP5165012A JPH06181225A (ja) 1992-06-11 1993-06-11 信号電荷伝送装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019920010135A KR940001464A (ko) 1992-06-11 1992-06-11 Ccd 영상소자

Publications (1)

Publication Number Publication Date
KR940001464A true KR940001464A (ko) 1994-01-11

Family

ID=19334532

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920010135A KR940001464A (ko) 1992-06-11 1992-06-11 Ccd 영상소자

Country Status (3)

Country Link
US (1) US5406101A (ko)
JP (1) JPH06181225A (ko)
KR (1) KR940001464A (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5729233A (en) * 1995-09-22 1998-03-17 Lg Semicon Co., Ltd. Analog/digital converter using a charge coupled device with poly-gates relatively sized
KR100259086B1 (ko) 1997-06-05 2000-06-15 김영환 고체촬상소자 및 이의 제조방법

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4001861A (en) * 1973-10-12 1977-01-04 The United States Of America As Represented By The Secretary Of The Navy Double-layer, polysilicon, two-phase, charge coupled device
US3943545A (en) * 1975-05-22 1976-03-09 Fairchild Camera And Instrument Corporation Low interelectrode leakage structure for charge-coupled devices
US4132903A (en) * 1977-05-12 1979-01-02 Rca Corporation CCD output circuit using thin film transistor
US4206372A (en) * 1979-02-28 1980-06-03 Rca Corporation Reduction of sparkle noise in CCD imagers

Also Published As

Publication number Publication date
JPH06181225A (ja) 1994-06-28
US5406101A (en) 1995-04-11

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E902 Notification of reason for refusal
E601 Decision to refuse application