KR880014678A - 고체촬상장치 - Google Patents

고체촬상장치 Download PDF

Info

Publication number
KR880014678A
KR880014678A KR870004874A KR870004874A KR880014678A KR 880014678 A KR880014678 A KR 880014678A KR 870004874 A KR870004874 A KR 870004874A KR 870004874 A KR870004874 A KR 870004874A KR 880014678 A KR880014678 A KR 880014678A
Authority
KR
South Korea
Prior art keywords
conductivity type
voltage
solid state
imaging device
state imaging
Prior art date
Application number
KR870004874A
Other languages
English (en)
Other versions
KR960004467B1 (ko
Inventor
미치오 야마무라
히로시 데라카와
데츠로 구메사와
다카시 후쿠쇼
Original Assignee
오가 노리오
소니 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 오가 노리오, 소니 가부시키가이샤 filed Critical 오가 노리오
Publication of KR880014678A publication Critical patent/KR880014678A/ko
Application granted granted Critical
Publication of KR960004467B1 publication Critical patent/KR960004467B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14831—Area CCD imagers

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

내용 없음

Description

고체촬상장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본원 발명에 의한 고체촬상장치의 요부를 나타내는 단면도, 제2도 a 및 제2도 b는 각각 펄스 전압(Øv)과 암신호의 파형을 나타내는 타이밍챠트, 제3도는 펄스 전압(Øv)의 듀티비(T2/T1)와 스미어 레벨과의 관계 및 듀티비(T2/T1)와 암신호 출력과의 관계를 나타내는 그래프.

Claims (3)

  1. (a) 제1의 도전형 기판과, (b) 이 제1의 도전형 기판의 표면에 형성된 제2의 도전형 전하축적영역과, (c) 이 제2의 도전형 전하축적 영역위에 절연막을 통하여 형성된 전방전극과, (d) 상기 제2의 도전형 전하축적 영역과 상기 절연막과의 계면에 제1의 도전형 전하를 축적하기 위한 제1의 전압 및 상기 제2의 도전형 전하축적 영역 아래의 공핍층을 확대하기 위한 제2의 전압을 교대로 상기 전방전극에 공급하는 수단으로 이루어지는 것을 특징으로 하는 고체촬상장치.
  2. 제1항에 있어서, 상기 제2전압의 상기 제1전압에 대한 듀티비는 약2 내지 5의 범위인 것을 특징으로 하는 고체촬상장치.
  3. 제1항에 있어서, 상기 제1전압은 1수평 블랭킹 기간내에 부여되는 것을 특징으로 하는 고체촬상장치
    ※ 참고사항:최초출원 내용에 의하여 공개하는 것임.
KR1019870004874A 1986-05-19 1987-05-18 고체촬상장치 KR960004467B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP61114375A JPS62269357A (ja) 1986-05-19 1986-05-19 固体撮像装置
JP86-114375 1986-05-19
JP?????86-114375 1986-05-19

Publications (2)

Publication Number Publication Date
KR880014678A true KR880014678A (ko) 1988-12-24
KR960004467B1 KR960004467B1 (ko) 1996-04-06

Family

ID=14636115

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019870004874A KR960004467B1 (ko) 1986-05-19 1987-05-18 고체촬상장치

Country Status (5)

Country Link
US (1) US4794279A (ko)
EP (1) EP0247503B1 (ko)
JP (1) JPS62269357A (ko)
KR (1) KR960004467B1 (ko)
DE (1) DE3751102T2 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101385014B1 (ko) * 2009-10-09 2014-04-14 고쿠리츠 다이가꾸 호우진 시즈오까 다이가꾸 반도체 소자 및 고체 촬상 장치

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01125074A (ja) * 1987-11-10 1989-05-17 Fuji Photo Film Co Ltd 固体撮像装置
JPH07112054B2 (ja) * 1988-03-08 1995-11-29 株式会社東芝 固体撮像装置
JPH0766961B2 (ja) * 1988-10-07 1995-07-19 三菱電機株式会社 固体撮像素子
NL8901283A (nl) * 1989-05-23 1990-12-17 Philips Nv Ladingsgekoppelde inrichting en beeldopneeminrichting omvattende een dergelijke ladingsgekoppelde inrichting, en camera voorzien van een dergelijke beeldopneeminrichting.
JPH02309877A (ja) * 1989-05-25 1990-12-25 Sony Corp 固体撮像装置
US5182623A (en) * 1989-11-13 1993-01-26 Texas Instruments Incorporated Charge coupled device/charge super sweep image system and method for making
US5528643A (en) * 1989-11-13 1996-06-18 Texas Instruments Incorporated Charge coupled device/charge super sweep image system and method for making
JP2738589B2 (ja) * 1990-09-05 1998-04-08 三菱電機株式会社 固体撮像素子
JP2690612B2 (ja) * 1990-10-05 1997-12-10 キヤノン株式会社 光電変換装置
US5329149A (en) * 1990-10-12 1994-07-12 Seiko Instruments Inc. Image sensor with non-light-transmissive layer having photosensing windows
JP2500428B2 (ja) * 1993-04-06 1996-05-29 日本電気株式会社 イメ―ジセンサおよびその駆動方法
US5757427A (en) * 1993-04-23 1998-05-26 Hamamatsu Photonics K.K. Image pick-up apparatus having a charge coupled device with multiple electrodes, a buffer layer located below some of the electrodes
JPH08264747A (ja) * 1995-03-16 1996-10-11 Eastman Kodak Co コンテナ側方オーバーフロードレインインプラントを有する固体画像化器及びその製造方法
JP2005348061A (ja) * 2004-06-02 2005-12-15 Sanyo Electric Co Ltd 電子カメラ
DE602004025681D1 (de) * 2004-06-15 2010-04-08 St Microelectronics Res & Dev Bildsensor

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5323224A (en) * 1976-08-16 1978-03-03 Hitachi Ltd Solid pickup unit
JPS6157181A (ja) * 1984-08-28 1986-03-24 Sharp Corp 固体撮像装置
JPH0795827B2 (ja) * 1985-07-22 1995-10-11 株式会社ニコン カメラ駆動装置
JPS61219271A (ja) * 1985-03-25 1986-09-29 Nippon Kogaku Kk <Nikon> インタ−ライン転送型ｃｃｄの駆動方法
US4743778A (en) * 1985-03-25 1988-05-10 Nippon Kogaku K. K. Solid-state area imaging device having interline transfer CCD

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101385014B1 (ko) * 2009-10-09 2014-04-14 고쿠리츠 다이가꾸 호우진 시즈오까 다이가꾸 반도체 소자 및 고체 촬상 장치

Also Published As

Publication number Publication date
US4794279A (en) 1988-12-27
DE3751102T2 (de) 1995-10-12
DE3751102D1 (de) 1995-04-06
EP0247503B1 (en) 1995-03-01
EP0247503A2 (en) 1987-12-02
KR960004467B1 (ko) 1996-04-06
JPS62269357A (ja) 1987-11-21
EP0247503A3 (en) 1990-04-04

Similar Documents

Publication Publication Date Title
KR880014678A (ko) 고체촬상장치
US3931465A (en) Blooming control for charge coupled imager
JPS57162364A (en) Solid state image pickup device
GB1531180A (en) Solid-state imaging devices
JP2525781B2 (ja) 固体撮像装置の駆動方法
US4462047A (en) Solid state imager with blooming suppression
KR100236797B1 (ko) 이미지센서용 소스종동회로
GB2197986A (en) Charge transfer devices
KR970054308A (ko) 고상 화상 형성 장치
KR930022571A (ko) 전하 전송장치 및 고체 촬상장치
KR920008947A (ko) Npn형 vccd 구조의 고체 촬상소자
KR930020967A (ko) 고체촬상소자
KR970077710A (ko) 고체촬상장치
US5627388A (en) CCD-solid state image sensor using electron and hole signal charges and method for processing signal thereof
JP3235081B2 (ja) 電荷結合イメージセンサ
JPH0669089B2 (ja) 電荷転送装置
US4599637A (en) Solid state imaging device with photoconductive layer
KR880008642A (ko) 고체촬상장치
KR970054290A (ko) 고체 촬상 소자
KR940027200A (ko) 고체촬상소자의 구조
JPH0521351B2 (ko)
KR940001464A (ko) Ccd 영상소자
JPS5586273A (en) Solid-state pickup unit
JPS60124180A (ja) 固体撮像板及び撮像方式
KR910004014A (ko) 고체촬상장치

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20030317

Year of fee payment: 8

LAPS Lapse due to unpaid annual fee