KR920008947A - Npn형 vccd 구조의 고체 촬상소자 - Google Patents

Npn형 vccd 구조의 고체 촬상소자 Download PDF

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Publication number
KR920008947A
KR920008947A KR1019900016259A KR900016259A KR920008947A KR 920008947 A KR920008947 A KR 920008947A KR 1019900016259 A KR1019900016259 A KR 1019900016259A KR 900016259 A KR900016259 A KR 900016259A KR 920008947 A KR920008947 A KR 920008947A
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KR
South Korea
Prior art keywords
vccd
state image
npn type
image sensor
solid
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Application number
KR1019900016259A
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English (en)
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KR930008527B1 (ko
Inventor
정헌준
Original Assignee
문정환
금성일렉트론 주식회사
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Application filed by 문정환, 금성일렉트론 주식회사 filed Critical 문정환
Priority to KR1019900016259A priority Critical patent/KR930008527B1/ko
Priority to US07/775,306 priority patent/US5233429A/en
Priority to JP3292050A priority patent/JP2858179B2/ja
Priority to DE4133996A priority patent/DE4133996C2/de
Publication of KR920008947A publication Critical patent/KR920008947A/ko
Application granted granted Critical
Publication of KR930008527B1 publication Critical patent/KR930008527B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14887—Blooming suppression
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14831—Area CCD imagers

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

내용 없음

Description

NPN형 VCCD 구조의 고체 촬상소자
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제4도는 본 발명에 따른 NPN형 VCCD구조의 고체 촬상소자 구조 단면도,
제5도는 제4도에서 A-A'의 전원 분포도,
제6도는 제4도에서 B-B'의 전위 분포도,
제7도는 제4도에서 셔터 동작시 B-B'의 전위 분포도.

Claims (3)

  1. VCCD의 수직 구조를 N-P-N형으로 만들어 번짐을 방지 하도록한 것을 특징으로 하는 NPN형 VCCD구조의 고체 촬상소자.
  2. 제1항에 있어서, VCCD밑의 n층을 OFD로 사용하는 것을 특징으로 하는 NPN형 VCCD구조의 고체 촬상소자.
  3. 제1항 내지는 제2항에 있어서, VCCD밑의 N층에 전압을 인가하여 셔터 동작을 하도록한 것을 특징으로 하는 NPN형 VCCD구조의 고체 촬상소자.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900016259A 1990-10-13 1990-10-13 Npn형 vccd 구조의 고체촬상 소자 KR930008527B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1019900016259A KR930008527B1 (ko) 1990-10-13 1990-10-13 Npn형 vccd 구조의 고체촬상 소자
US07/775,306 US5233429A (en) 1990-10-13 1991-10-11 CCD image sensor having improved structure of VCCD region thereof
JP3292050A JP2858179B2 (ja) 1990-10-13 1991-10-14 Ｃｃｄ映像素子
DE4133996A DE4133996C2 (de) 1990-10-13 1991-10-14 CCD-Bildwandler

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900016259A KR930008527B1 (ko) 1990-10-13 1990-10-13 Npn형 vccd 구조의 고체촬상 소자

Publications (2)

Publication Number Publication Date
KR920008947A true KR920008947A (ko) 1992-05-28
KR930008527B1 KR930008527B1 (ko) 1993-09-09

Family

ID=19304610

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900016259A KR930008527B1 (ko) 1990-10-13 1990-10-13 Npn형 vccd 구조의 고체촬상 소자

Country Status (4)

Country Link
US (1) US5233429A (ko)
JP (1) JP2858179B2 (ko)
KR (1) KR930008527B1 (ko)
DE (1) DE4133996C2 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100515019B1 (ko) * 1997-08-28 2005-11-29 삼성전자주식회사 전하결합소자형이미지센서

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3160382B2 (ja) * 1992-08-27 2001-04-25 株式会社東芝 固体撮像装置
JP3252487B2 (ja) * 1992-10-23 2002-02-04 松下電器産業株式会社 セルラ無線電話システム
JP2788388B2 (ja) * 1993-03-30 1998-08-20 株式会社東芝 固体撮像装置
KR970011376B1 (ko) * 1993-12-13 1997-07-10 금성일렉트론 주식회사 씨씨디(ccd)형 고체촬상소자
TW269744B (en) 1994-08-08 1996-02-01 Matsushita Electron Co Ltd Solid-state imaging device and method of manufacturing the same
US5608242A (en) * 1994-10-11 1997-03-04 Dalsa, Inc. Variable width CCD register with uniform pitch and charge storage capacity
US5786607A (en) * 1995-05-29 1998-07-28 Matsushita Electronics Corporation Solid-state image pick-up device and method for manufacturing the same
JP3460225B2 (ja) * 2000-04-06 2003-10-27 日本電気株式会社 電荷結合素子及びその製造法
US8878255B2 (en) 2013-01-07 2014-11-04 Semiconductor Components Industries, Llc Image sensors with multiple output structures
US8878256B2 (en) 2013-01-07 2014-11-04 Semiconductor Components Industries, Llc Image sensors with multiple output structures
US9621864B2 (en) 2014-01-14 2017-04-11 Microsoft Technology Licensing, Llc Spectral imaging system

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6020687A (ja) * 1983-07-15 1985-02-01 Nippon Kogaku Kk <Nikon> 電子スチルカメラ
EP0178664B1 (en) * 1984-10-18 1992-08-05 Matsushita Electronics Corporation Solid state image sensing device and method for making the same
EP0186162B1 (en) * 1984-12-24 1989-05-31 Kabushiki Kaisha Toshiba Solid state image sensor
US4836788A (en) * 1985-11-12 1989-06-06 Sony Corporation Production of solid-state image pick-up device with uniform distribution of dopants
JPS62181465A (ja) * 1986-02-05 1987-08-08 Victor Co Of Japan Ltd Ｃｃｄ固体撮像素子
US4814848A (en) * 1986-06-12 1989-03-21 Hitachi, Ltd. Solid-state imaging device
US4875100A (en) * 1986-10-23 1989-10-17 Sony Corporation Electronic shutter for a CCD image sensor
JP2594992B2 (ja) * 1987-12-04 1997-03-26 株式会社日立製作所 固体撮像装置
JPH0834568B2 (ja) * 1988-04-19 1996-03-29 三洋電機株式会社 固体撮像装置の駆動方法
JP2720478B2 (ja) * 1988-10-18 1998-03-04 株式会社ニコン 縦型オーバーフロードレインを備える固体撮像素子を用いた測光装置
JPH02113678A (ja) * 1988-10-21 1990-04-25 Nec Corp 固体撮像装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100515019B1 (ko) * 1997-08-28 2005-11-29 삼성전자주식회사 전하결합소자형이미지센서

Also Published As

Publication number Publication date
DE4133996A1 (de) 1992-04-16
JPH06181302A (ja) 1994-06-28
KR930008527B1 (ko) 1993-09-09
JP2858179B2 (ja) 1999-02-17
US5233429A (en) 1993-08-03
DE4133996C2 (de) 1996-10-31

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