KR880009450A - 고체촬상 장치 - Google Patents

고체촬상 장치 Download PDF

Info

Publication number
KR880009450A
KR880009450A KR1019870015045A KR870015045A KR880009450A KR 880009450 A KR880009450 A KR 880009450A KR 1019870015045 A KR1019870015045 A KR 1019870015045A KR 870015045 A KR870015045 A KR 870015045A KR 880009450 A KR880009450 A KR 880009450A
Authority
KR
South Korea
Prior art keywords
region
conductivity type
imaging device
state imaging
solid state
Prior art date
Application number
KR1019870015045A
Other languages
English (en)
Inventor
요시아키 하기와라
Original Assignee
오가 노리오
소니 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 오가 노리오, 소니 가부시키가이샤 filed Critical 오가 노리오
Publication of KR880009450A publication Critical patent/KR880009450A/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14887—Blooming suppression

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

내용 없음.

Description

고체촬상 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본원 발명 고체촬상 장치의 일실시예의 요부를 나타내는 단면도.
제2도는 제1도의 II-II′선 단면도.
제3도는 제1도 예의 설명을 위한 선도.

Claims (1)

  1. 제1의 도전형 반도체기판의 표면측에 제2의 도전형으로 이루어지는 전하축적영역을 가지는 고체촬상장치에 있어서, 상기 전하축적영역상에 제2의 도전형영역을 적층하고, 이 제2의 도전형영역과 상기 전하축적영역으로 전하축적부를 구성하는 동시에, 상기 제2의 도전형영역의 윗면 또는 측면, 또는 윗면 및 측면에 제1의 도전형영역을 설치하고, 상기 전하축적부에 과잉신호전하가 발생했을때는, 이 과잉신호전하를 상기 제1의 도전형영역에서 흡수하도록 한 것을 특징으로 하는 고체촬상장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019870015045A 1987-01-16 1987-12-28 고체촬상 장치 KR880009450A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP62-7655 1987-01-16
JP62007655A JPS63177460A (ja) 1987-01-16 1987-01-16 固体撮像装置

Publications (1)

Publication Number Publication Date
KR880009450A true KR880009450A (ko) 1988-09-15

Family

ID=11671832

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019870015045A KR880009450A (ko) 1987-01-16 1987-12-28 고체촬상 장치

Country Status (4)

Country Link
US (1) US4851887A (ko)
EP (1) EP0275180A3 (ko)
JP (1) JPS63177460A (ko)
KR (1) KR880009450A (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170002544A (ko) * 2014-05-08 2017-01-06 하마마츠 포토닉스 가부시키가이샤 거리 화상 센서

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2636171B1 (fr) * 1988-08-10 1990-11-09 Philips Nv Dispositif capteur d'images du type a transfert de trame
JP2517075B2 (ja) * 1988-08-31 1996-07-24 三菱電機株式会社 赤外線検知器
JPH07120779B2 (ja) * 1989-04-07 1995-12-20 三菱電機株式会社 固体撮像装置のオーバフロードレイン構造およびその製造方法
JP3117138B2 (ja) * 1989-09-13 2000-12-11 オリンパス光学工業株式会社 電子スチルカメラとその撮像記録素子
US5235198A (en) * 1989-11-29 1993-08-10 Eastman Kodak Company Non-interlaced interline transfer CCD image sensing device with simplified electrode structure for each pixel
US5130774A (en) * 1990-07-12 1992-07-14 Eastman Kodak Company Antiblooming structure for solid-state image sensor
JPH0828497B2 (ja) * 1990-07-19 1996-03-21 株式会社東芝 固体撮像装置
JP3238160B2 (ja) * 1991-05-01 2001-12-10 株式会社東芝 積層形固体撮像装置
JP3285928B2 (ja) * 1992-05-27 2002-05-27 株式会社東芝 固体撮像装置
US20030162273A1 (en) * 2002-02-04 2003-08-28 Anastasios Melis Modulation of sulfate permease for photosynthetic hydrogen production

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4369458A (en) * 1980-07-01 1983-01-18 Westinghouse Electric Corp. Self-aligned, flip-chip focal plane array configuration
JPS5812481A (ja) * 1981-07-15 1983-01-24 Toshiba Corp 固体撮像素子
JPS6029095A (ja) * 1983-07-28 1985-02-14 Matsushita Electric Ind Co Ltd 撮像装置およびその製造方法
JPS6156583A (ja) * 1984-08-27 1986-03-22 Sharp Corp 固体撮像装置
JPS61187267A (ja) * 1985-02-14 1986-08-20 Matsushita Electric Ind Co Ltd 固体撮像装置
JPS61193479A (ja) * 1985-02-22 1986-08-27 Fuji Photo Film Co Ltd 固体カラ−撮像デバイス
JPS6218755A (ja) * 1985-07-18 1987-01-27 Toshiba Corp 固体撮像装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170002544A (ko) * 2014-05-08 2017-01-06 하마마츠 포토닉스 가부시키가이샤 거리 화상 센서

Also Published As

Publication number Publication date
US4851887A (en) 1989-07-25
EP0275180A2 (en) 1988-07-20
EP0275180A3 (en) 1989-06-28
JPS63177460A (ja) 1988-07-21

Similar Documents

Publication Publication Date Title
DE3585688D1 (de) Bildaufnahme mit halbleiter.
KR850005160A (ko) 적층형 반도체 기억장치
DE3788499D1 (de) Halbleiter-Grabenkondensator-Struktur.
DE3853814D1 (de) Integrierte Halbleiterschaltung.
KR920007199A (ko) 반도체기억장치
NL192554B (nl) Halfgeleider beeldopneeminrichting.
KR880009450A (ko) 고체촬상 장치
DE3851347D1 (de) Integrierte Schaltung vom Typ "Masterslice".
DE3576612D1 (de) Halbleiteranordnung mit mos-transistoren.
DE3883132D1 (de) Synchrone halbleiterspeichervorrichtung.
DE3884492D1 (de) Integrierte halbleiterschaltungsanordnung.
DE3883188D1 (de) Duennfilm-halbleiteranordung.
NO885788L (no) Roerformet piezo-elektrisk sensor.
DE3885008D1 (de) Zwischenschicht mit niedrigem Modul.
DE3782103D1 (de) Dynamischer halbleiterspeicher mit leseschema.
DE3583113D1 (de) Integrierte halbleiterschaltungsanordnung in polycell-technik.
KR920008947A (ko) Npn형 vccd 구조의 고체 촬상소자
DE3381460D1 (de) Integrierte halbleiterschaltungsanordnung.
DE3874775D1 (de) Halbleiterbildsensor.
CH553481A (fr) Ensemble pour polariser le substrat d'un circuit integre.
DE3484983D1 (de) Leistungshalbleiteranordnung mit mesa-struktur.
DE3779202D1 (de) Amorphe duennfilmtransistoranordnung.
NL7711614A (nl) Verbindingsstruktuur voor geintegreerde half- geleiderschakelingen.
DE3789891D1 (de) Halbleiterschaltung mit resonantem Tunnelungseffekt.
DE3583115D1 (de) Halbleiterspeichervorrichtung.

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E601 Decision to refuse application