KR930001445A - 고체촬상장치 - Google Patents

고체촬상장치 Download PDF

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Publication number
KR930001445A
KR930001445A KR1019920009519A KR920009519A KR930001445A KR 930001445 A KR930001445 A KR 930001445A KR 1019920009519 A KR1019920009519 A KR 1019920009519A KR 920009519 A KR920009519 A KR 920009519A KR 930001445 A KR930001445 A KR 930001445A
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KR
South Korea
Prior art keywords
well
mos transistor
imaging device
solid state
state imaging
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KR1019920009519A
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English (en)
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KR100218773B1 (ko
Inventor
가즈야 요세모도
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오가 노리오
소니 가부시기가이샤
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Publication of KR930001445A publication Critical patent/KR930001445A/ko
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Publication of KR100218773B1 publication Critical patent/KR100218773B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76816—Output structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14831—Area CCD imagers

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Ceramic Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

드라이브측 및 부하측의 MOS 트랜지스터의 각 I-V 특성의 최적화를 가능하게 하고, 소스폴로워앰프의 소신호시의 AC 이득을 최대화함으로써, 감도의 향상을 도모한다.
플로팅디퓨전형 전하검출증폭기를 출력부로서 구비하는 CCD 고체촬상장치에 있어서, 드라이브측 MOS 트랜지스터(8)부분의 P 웰(19)과 부하측 MOS 트랜지스터(9)부분의 P 웰(20)을 독립적으로 또한 기판(11)의 표면에 대해 P 웰(19)을 깊게, P 웰(20)을 얕게 형성하고, 더욱이 전위적으로 뉴트럴화 한다.

Description

고체촬상장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본원 발명에 의한 신호전하검출용 소스폴로워앰프의 일실시예의 구조의 단면도.
제2도는 MOS 트랜지스터의 I-V 특성측정을 위한 접속회로도.
제3도는 드라이브측 MOS 트랜지스터의 Id-Vd 특성도이며, (a)는 종래예에 의한 특성도, (b)는 본원 발명에 의한 특성도.
제4도는 드라이브측 MOS 트랜지스터의 Id-Vg 특성도이며, (a)는 종래예에 의한 특성도, (b)는 본원 발명에 의한 특성도.
제5도는 부하측 MOS 트랜지스터의 Id-Vd 특성도이며, (a)는 종래예에 의한 특성도, (b)는 본원 발명에 의한 특성도.
제6도는 본원 발명에 관한 신호전하검출용 소스폴로워앰프의 다른 실시예의 구조의 단면도.
제7도는 인터라인전송방식의 CCD 고체촬상장치의 개략구성도.
제8도는 신호전하검출용 소스폴로워앰프의 종래구조의 단면도.
제9도는 부하측 MOS 트랜지스터의 I-V 특성도이며, (a)는 종래예에 의한 특성도, (b)는 이상적인 특성도.
* 도면의 주요부분에 대한 부호의 설명
1 : 포토센서 3 : 수직시프트레지스터
4 : 촬상부 5 : 수평시프트레지스터
6 : 플로팅디퓨젼(FD) 7 : 소스폴로워앰프
8 : 드라이브측 MOS 트랜지스터 9 : 부하측 MOS 트랜지스터
11 : N형 기판 12, 19, 20 : P 웰
13, 16 : N+드레인영역 14, 17 : N+소스영역
15, 18 : 게이트전극

Claims (3)

  1. 제1도 전형의 기판의 표면측에 형성된 드라이브측 MOS 트랜지스터 및 부하측 MOS 트랜지스터로 이루어지는 플로팅디퓨전형 전하검출증폭기를 출력부로서 구비하는 고체촬상장치로서, 상기 드라이브측 MOS 트랜지스터를 포함하는 활성영역과 상기 기판의 배면측을 절연분리하는 제2도 전형의 제1웰과, 상기 부하측 MOS 트랜지스터를 포함하는 활성영역과 상기 기판의 배면측을 절연분리하는 제2도 전형의 제2웰을 가지며, 상기 기판의 표면에 대해 상기 제1의 웰을 깊게, 상기 제2의 웰이 얕게 형성되고, 또한 전위적으로 뉴트럴화 된 것을 특징으로 하는 고체촬상장치.
  2. 제1항에 있어서, 상기 제1의 웰이 전위적으로 공핍화(空乏化)된 것을 특징으로 하는 고체촬상장치.
  3. 제1항에 있어서, 상기 제1의 웰이 전위적으로 뉴트럴화 된 것을 특징으로 하는 고체촬상장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개되는 것임.
KR1019920009519A 1991-06-04 1992-06-02 고체촬상장치 KR100218773B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP03159601A JP3097186B2 (ja) 1991-06-04 1991-06-04 固体撮像装置
JP91-159,601 1991-06-04

Publications (2)

Publication Number Publication Date
KR930001445A true KR930001445A (ko) 1993-01-16
KR100218773B1 KR100218773B1 (ko) 1999-09-01

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920009519A KR100218773B1 (ko) 1991-06-04 1992-06-02 고체촬상장치

Country Status (6)

Country Link
US (1) US5202907A (ko)
EP (1) EP0517164B1 (ko)
JP (1) JP3097186B2 (ko)
KR (1) KR100218773B1 (ko)
DE (1) DE69209374T2 (ko)
SG (1) SG63631A1 (ko)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2832136B2 (ja) * 1992-12-28 1998-12-02 シャープ株式会社 固体撮像装置及びその製造方法
JP3020785B2 (ja) * 1993-12-09 2000-03-15 株式会社東芝 固体撮像装置
JP3367776B2 (ja) * 1993-12-27 2003-01-20 株式会社東芝 半導体装置
US5625210A (en) * 1995-04-13 1997-04-29 Eastman Kodak Company Active pixel sensor integrated with a pinned photodiode
US6297070B1 (en) 1996-12-20 2001-10-02 Eastman Kodak Company Active pixel sensor integrated with a pinned photodiode
US6100556A (en) * 1997-11-14 2000-08-08 Motorola Inc. Method of forming a semiconductor image sensor and structure
US6492694B2 (en) 1998-02-27 2002-12-10 Micron Technology, Inc. Highly conductive composite polysilicon gate for CMOS integrated circuits
NL1011381C2 (nl) 1998-02-28 2000-02-15 Hyundai Electronics Ind Fotodiode voor een CMOS beeldsensor en werkwijze voor het vervaardigen daarvan.
KR100268440B1 (ko) * 1998-09-21 2000-10-16 윤종용 고감도 고체 촬상 장치
US6407440B1 (en) 2000-02-25 2002-06-18 Micron Technology Inc. Pixel cell with high storage capacitance for a CMOS imager
US7128266B2 (en) 2003-11-13 2006-10-31 Metrologic Instruments. Inc. Hand-supportable digital imaging-based bar code symbol reader supporting narrow-area and wide-area modes of illumination and image capture
US7464877B2 (en) 2003-11-13 2008-12-16 Metrologic Instruments, Inc. Digital imaging-based bar code symbol reading system employing image cropping pattern generator and automatic cropped image processor
US7594609B2 (en) * 2003-11-13 2009-09-29 Metrologic Instruments, Inc. Automatic digital video image capture and processing system supporting image-processing based code symbol reading during a pass-through mode of system operation at a retail point of sale (POS) station
US7490774B2 (en) * 2003-11-13 2009-02-17 Metrologic Instruments, Inc. Hand-supportable imaging based bar code symbol reader employing automatic light exposure measurement and illumination control subsystem integrated therein
US7110028B1 (en) * 2002-08-13 2006-09-19 Foveon, Inc. Electronic shutter using buried layers and active pixel sensor and array employing same
JP4016192B2 (ja) * 2002-08-19 2007-12-05 ソニー株式会社 固体撮像装置とその製造方法
US7841533B2 (en) 2003-11-13 2010-11-30 Metrologic Instruments, Inc. Method of capturing and processing digital images of an object within the field of view (FOV) of a hand-supportable digitial image capture and processing system
JP4827422B2 (ja) * 2005-03-10 2011-11-30 ルネサスエレクトロニクス株式会社 半導体集積回路装置の設計方法と装置並びにプログラム
US7741857B2 (en) * 2008-03-06 2010-06-22 International Business Machines Corporation System and method for de-embedding a device under test employing a parametrized netlist
JP5525736B2 (ja) * 2009-02-18 2014-06-18 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー 半導体装置及びその製造方法
US8471310B2 (en) 2011-01-11 2013-06-25 Aptina Imaging Corporation Image sensor pixels with back-gate-modulated vertical transistor
CN111628002B (zh) * 2020-06-08 2023-05-23 无锡光磊电子科技有限公司 一种mos管

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NL8301629A (nl) * 1983-05-09 1984-12-03 Philips Nv Halfgeleiderinrichting.
JP2727584B2 (ja) * 1988-09-20 1998-03-11 ソニー株式会社 固体撮像装置
JPH02262344A (ja) * 1989-03-31 1990-10-25 Sony Corp 出力回路

Also Published As

Publication number Publication date
EP0517164A1 (en) 1992-12-09
EP0517164B1 (en) 1996-03-27
JP3097186B2 (ja) 2000-10-10
DE69209374D1 (de) 1996-05-02
KR100218773B1 (ko) 1999-09-01
SG63631A1 (en) 1999-03-30
JPH04357873A (ja) 1992-12-10
US5202907A (en) 1993-04-13
DE69209374T2 (de) 1996-10-31

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