KR870000747A - 인화비소칼륨 혼합결정 에피텍셜 웨이퍼 - Google Patents
인화비소칼륨 혼합결정 에피텍셜 웨이퍼 Download PDFInfo
- Publication number
- KR870000747A KR870000747A KR1019860004772A KR860004772A KR870000747A KR 870000747 A KR870000747 A KR 870000747A KR 1019860004772 A KR1019860004772 A KR 1019860004772A KR 860004772 A KR860004772 A KR 860004772A KR 870000747 A KR870000747 A KR 870000747A
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- KR
- South Korea
- Prior art keywords
- epitaxial wafer
- mixed crystal
- layer
- monolayer
- single crystal
- Prior art date
Links
- 239000013078 crystal Substances 0.000 title claims 12
- KWLSQQRRSAWBOQ-UHFFFAOYSA-N dipotassioarsanylpotassium Chemical compound [K][As]([K])[K] KWLSQQRRSAWBOQ-UHFFFAOYSA-N 0.000 title 1
- 239000010410 layer Substances 0.000 claims 7
- 239000002356 single layer Substances 0.000 claims 6
- 239000000758 substrate Substances 0.000 claims 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims 3
- 229910005540 GaP Inorganic materials 0.000 claims 3
- BTYUGHWCEFRRRF-UHFFFAOYSA-N [As].[K] Chemical compound [As].[K] BTYUGHWCEFRRRF-UHFFFAOYSA-N 0.000 claims 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 claims 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02392—Phosphides
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02395—Arsenides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02461—Phosphides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02463—Arsenides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02502—Layer structure consisting of two layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/0251—Graded layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/041—Doping control in crystal growth
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/056—Gallium arsenide
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/067—Graded energy gap
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/072—Heterojunctions
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/097—Lattice strain and defects
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/936—Graded energy gap
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Led Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Recrystallisation Techniques (AREA)
Abstract
내용 없음.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
Claims (7)
- 단일결정기질, 이러한 단일결정 기질상에 형성되고, 그 두께에 따라 혼합결정비가 변동되는 인화비소칼륨층(이하 "단층"이라 한다) 및 단층상에 형성되고, 그 두께에 따라 일정한 혼합결정비를 가진 인화비소칼륨층(이하 "일정층"이라 한다)으로 구성된 인화비소 갈륨 혼합결정의 에피텍셜 웨이퍼로서, 상기 단층내에 또는 그 위에 인화비소갈륨의 혼합결정비가 그 두께에 따라 불연속적으로 변동되는 적어도 하나 이상의 층영역이 포함되어 있는 것을 특징으로 하는 에피텍셜 웨이퍼.
- 제1항에 있어서, 단일 결정기질이 비소화갈륨으로 구성되어 있는 에피텍셜 웨이퍼.
- 제1항에 있어서 단일 결정기질이 인화갈륨으로 구성되어 있는 에피텍셜 웨이퍼. .
- 제1항 또는 제2항에 있어서, 일정층의 혼합결정비가 0.35내지 0.45의 범위 안에 한값으로 되어 있는 에피텍셜 웨이퍼.
- 제4항에 았어서, 상기 값이 0.4인 에피텍셜 웨이퍼.
- 제4항에 있어서, 상기 단층의 두께가 5내지 200μm의 범위 안에 있는 에피텍셜 웨이퍼.
- 제4항 또는 제6항에 있어서, 상기 단층에 이 단층과 단일 결정기질 또는 일정층 사이의 계면상에 혼합결정비가 상기 단층의 혼합결정비의 가변도에 대하여 불연속적으로 변동되는 적어도 하나 이상의 층영역이 포함되어 있는 에피텍셜 웨이퍼.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60133554A JPS61291491A (ja) | 1985-06-19 | 1985-06-19 | りん化ひ化ガリウム混晶エピタキシヤルウエハ |
JP133554 | 1985-06-19 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR870000747A true KR870000747A (ko) | 1987-02-01 |
KR920007445B1 KR920007445B1 (ko) | 1992-09-01 |
Family
ID=15107524
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019860004772A KR920007445B1 (ko) | 1985-06-19 | 1986-06-16 | 갈륨비소인 혼합결정 에피택셜 웨이퍼 |
Country Status (5)
Country | Link |
---|---|
US (2) | US4865655A (ko) |
JP (1) | JPS61291491A (ko) |
KR (1) | KR920007445B1 (ko) |
BE (1) | BE904951A (ko) |
DE (1) | DE3620466C3 (ko) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63226918A (ja) * | 1987-03-16 | 1988-09-21 | Shin Etsu Handotai Co Ltd | 燐化砒化ガリウム混晶エピタキシヤルウエ−ハ |
US5068695A (en) * | 1988-04-29 | 1991-11-26 | Sri International | Low dislocation density semiconductor device |
US5221367A (en) * | 1988-08-03 | 1993-06-22 | International Business Machines, Corp. | Strained defect-free epitaxial mismatched heterostructures and method of fabrication |
US5264389A (en) * | 1988-09-29 | 1993-11-23 | Sanyo Electric Co., Ltd. | Method of manufacturing a semiconductor laser device |
JPH06105796B2 (ja) * | 1989-05-30 | 1994-12-21 | 信越半導体株式会社 | 発光ダイオードおよびその製造方法 |
US5445897A (en) * | 1989-11-22 | 1995-08-29 | Mitsubishi Kasei Polytec Company | Epitaxial wafer and process for producing the same |
JPH0760903B2 (ja) * | 1989-11-22 | 1995-06-28 | 三菱化学株式会社 | エピタキシャルウェハ及びその製造方法 |
DE4011145A1 (de) * | 1990-04-06 | 1991-10-10 | Telefunken Electronic Gmbh | Lumineszenz-halbleiterelement |
JP3111644B2 (ja) * | 1992-06-09 | 2000-11-27 | 三菱化学株式会社 | りん化ひ化ガリウムエピタキシャルウエハ |
JP3436379B2 (ja) * | 1992-07-28 | 2003-08-11 | 三菱化学株式会社 | りん化ひ化ガリウムエピタキシャルウエハ |
US5435441A (en) * | 1993-10-28 | 1995-07-25 | Whirlpool Corporation | Packing support for moveable articles within a refrigerator cabinet |
US5448082A (en) * | 1994-09-27 | 1995-09-05 | Opto Diode Corporation | Light emitting diode for use as an efficient emitter or detector of light at a common wavelength and method for forming the same |
JP3341564B2 (ja) * | 1996-01-12 | 2002-11-05 | 信越半導体株式会社 | 化合物半導体エピタキシャルウエーハ |
CN1082032C (zh) * | 1997-02-03 | 2002-04-03 | 中国科学技术大学 | 一种砷化铟、砷化镓的化学还原制备方法 |
JP3301371B2 (ja) * | 1997-05-27 | 2002-07-15 | 信越半導体株式会社 | 化合物半導体エピタキシャルウェーハの製造方法 |
KR100309402B1 (ko) * | 1997-05-27 | 2002-03-08 | 와다 다다시 | 화합물반도체에피택셜웨이퍼의제조방법 |
US6661445B2 (en) * | 1998-08-31 | 2003-12-09 | Canon Kabushiki Kaisha | Exposure apparatus with an array of light emitting devices |
IT1302713B1 (it) | 1998-10-20 | 2000-09-29 | Acs Dobfar Spa | Sacco per conservare e trasportare prodotti sterili in polvere e performare nel sacco stesso soluzioni di tali prodotti. |
JP2002528913A (ja) * | 1998-10-23 | 2002-09-03 | インフィネオン テクノロジース アクチエンゲゼルシャフト | 電力用半導体及び製造方法 |
JP2001233698A (ja) * | 2000-02-23 | 2001-08-28 | Mitsubishi Chemicals Corp | りん化ひ化ガリウム混晶エピタキシャルウエハ |
US12046471B1 (en) | 2018-06-06 | 2024-07-23 | United States Of America As Represented By The Secretary Of The Air Force | Optimized thick heteroepitaxial growth of semiconductors with in-situ substrate pretreatment |
CN114079226B (zh) * | 2020-08-21 | 2024-01-12 | 山东华光光电子股份有限公司 | 一种高均匀性高功率的激光器外延片及其制备方法 |
CN116905090B (zh) * | 2023-09-12 | 2023-12-01 | 苏州焜原光电有限公司 | 一种渐变磷组分磷砷化镓材料的生长方法 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3725749A (en) * | 1971-06-30 | 1973-04-03 | Monsanto Co | GaAS{11 {11 {11 P{11 {11 ELECTROLUMINESCENT DEVICE DOPED WITH ISOELECTRONIC IMPURITIES |
JPS527373B2 (ko) * | 1972-08-15 | 1977-03-02 | ||
JPS5323590B2 (ko) * | 1972-08-15 | 1978-07-15 | ||
JPS5122414B2 (ko) * | 1972-08-17 | 1976-07-09 | ||
JPS4941279A (ko) * | 1972-08-28 | 1974-04-18 | ||
JPS5129880B2 (ko) * | 1973-03-15 | 1976-08-27 | ||
US3963538A (en) * | 1974-12-17 | 1976-06-15 | International Business Machines Corporation | Two stage heteroepitaxial deposition process for GaP/Si |
US3963539A (en) * | 1974-12-17 | 1976-06-15 | International Business Machines Corporation | Two stage heteroepitaxial deposition process for GaAsP/Si LED's |
JPS5856963B2 (ja) * | 1977-05-06 | 1983-12-17 | 三菱化成ポリテック株式会社 | 電子発光化合物半導体の製造方法 |
JPS581539B2 (ja) * | 1978-07-07 | 1983-01-11 | 三菱化成ポリテック株式会社 | エピタキシヤルウエハ− |
JPS5696834A (en) * | 1979-12-28 | 1981-08-05 | Mitsubishi Monsanto Chem Co | Compound semiconductor epitaxial wafer and manufacture thereof |
US4510515A (en) * | 1981-01-28 | 1985-04-09 | Stanley Electric Co., Ltd. | Epitaxial wafer of compound semiconductor display device |
US4495514A (en) * | 1981-03-02 | 1985-01-22 | Eastman Kodak Company | Transparent electrode light emitting diode and method of manufacture |
US4438446A (en) * | 1981-05-29 | 1984-03-20 | Bell Telephone Laboratories, Incorporated | Double barrier double heterostructure laser |
DE3128395A1 (de) * | 1981-07-17 | 1983-02-03 | Siemens AG, 1000 Berlin und 8000 München | Lumineszenzdiode |
DD205284A1 (de) * | 1982-04-23 | 1983-12-21 | Werk Fernsehelektronik Veb | Epitaxieschichtanordnung fuer lichtemittierende halbleiterbauelemente und verfahren zur herstellung |
US4616241A (en) * | 1983-03-22 | 1986-10-07 | The United States Of America As Represented By The United States Department Of Energy | Superlattice optical device |
JPS607720A (ja) * | 1983-06-28 | 1985-01-16 | Nec Corp | エピタキシヤル成長方法 |
-
1985
- 1985-06-19 JP JP60133554A patent/JPS61291491A/ja active Granted
-
1986
- 1986-06-16 KR KR1019860004772A patent/KR920007445B1/ko not_active IP Right Cessation
- 1986-06-18 BE BE0/216802A patent/BE904951A/fr not_active IP Right Cessation
- 1986-06-19 DE DE3620466A patent/DE3620466C3/de not_active Expired - Lifetime
-
1987
- 1987-11-18 US US07/122,591 patent/US4865655A/en not_active Expired - Lifetime
-
1989
- 1989-07-20 US US07/383,161 patent/US4968642A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
BE904951A (fr) | 1986-10-16 |
US4968642A (en) | 1990-11-06 |
US4865655A (en) | 1989-09-12 |
JPS61291491A (ja) | 1986-12-22 |
JPH0581560B2 (ko) | 1993-11-15 |
DE3620466C3 (de) | 1998-04-23 |
DE3620466C2 (ko) | 1993-09-09 |
KR920007445B1 (ko) | 1992-09-01 |
DE3620466A1 (de) | 1987-01-02 |
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