KR900003981A - 반도체 단결정 기판 - Google Patents

반도체 단결정 기판 Download PDF

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Publication number
KR900003981A
KR900003981A KR1019890011143A KR890011143A KR900003981A KR 900003981 A KR900003981 A KR 900003981A KR 1019890011143 A KR1019890011143 A KR 1019890011143A KR 890011143 A KR890011143 A KR 890011143A KR 900003981 A KR900003981 A KR 900003981A
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KR
South Korea
Prior art keywords
single crystal
semiconductor single
crystal substrate
orientation
semiconductor
Prior art date
Application number
KR1019890011143A
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English (en)
Inventor
세이이찌 이와마쯔
Original Assignee
야마무라 가쯔미
세이꼬 엡슨 가부시끼 가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP19767188A external-priority patent/JPH0246716A/ja
Priority claimed from JP22571788A external-priority patent/JPH0274074A/ja
Application filed by 야마무라 가쯔미, 세이꼬 엡슨 가부시끼 가이샤 filed Critical 야마무라 가쯔미
Publication of KR900003981A publication Critical patent/KR900003981A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42356—Disposition, e.g. buried gate electrode
    • H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
    • H01L29/8128—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate with recessed gate

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Element Separation (AREA)
  • Thin Film Transistor (AREA)

Abstract

내용 없음

Description

반도체 단결정 기판
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명의 응용의 한 예인 트랜치 게이트 MIS FET의 주요부분의 단면도.
제5도는 본 발명의 응용의 다른 예인 GaAs 기판을 이용하는 MES FET의 단면도.

Claims (6)

  1. 결정면 지향이(110)이고, 지향 평면의 결정 지향이〈110〉인 것을 특징으로 하는 반도체 단결정 기판.
  2. 결정면 지향이(100)이고 지향 평면이 결정 지향이〈100〉인 것을 특징으로 하는 반도체 단결정 기판.
  3. 제1항 또는 제2항에 있어서, 상기 반도체 기판이 실리콘 단결정 웨이퍼로 된 것을 특징으로 하는 반도체 단결정 기판.
  4. 제1항 또는 제2항에 있어서, 상기 반도체 기판이 주성분으로서 GaAs나 InP를 포함하는 혼합물 반도체 실리콘 단결정 웨이퍼인 것을 특징으로 하는 반도체 단결정 기판.
  5. 반도체 단결정 기판이 결정면 지향이(110)향 평면의 결정 지향이〈110〉인 반도체 단결정 기판을 포함하며, 상기 반도체 단결정 기판에는 트렌티 게이트, 소스, 드레인, 트렌치 게이트 전극, 소스 전극 및 드레인 전극이 제공되어 있는 것을 특징으로 하는 반도체 단결정 기판.
  6. 반도체 단결정 기판이, 결정면 지향이(100)고 지향 평면의 결정 지향이〈100〉인 반도체 단결정 기판을 포함하며, 상기 반도체 단결정 기판에는 트렌치 게이트, 소스, 드레인, 트렌치 게이트 전극, 소스 전극 및 드레인 전극이 제공되어 있는 것을 특징으로 하는 반도체 단결정 기판.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019890011143A 1988-08-08 1989-08-04 반도체 단결정 기판 KR900003981A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP19767188A JPH0246716A (ja) 1988-08-08 1988-08-08 シリコン・ウェーハ
JP63-197671 1988-08-08
JP22571788A JPH0274074A (ja) 1988-09-09 1988-09-09 半導体基板
JP63-225717 1988-09-09

Publications (1)

Publication Number Publication Date
KR900003981A true KR900003981A (ko) 1990-03-27

Family

ID=26510499

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890011143A KR900003981A (ko) 1988-08-08 1989-08-04 반도체 단결정 기판

Country Status (2)

Country Link
EP (1) EP0354449A3 (ko)
KR (1) KR900003981A (ko)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5182233A (en) * 1989-08-02 1993-01-26 Kabushiki Kaisha Toshiba Compound semiconductor pellet, and method for dicing compound semiconductor wafer
US5248893A (en) * 1990-02-26 1993-09-28 Advanced Micro Devices, Inc. Insulated gate field effect device with a smoothly curved depletion boundary in the vicinity of the channel-free zone
US5698893A (en) * 1995-01-03 1997-12-16 Motorola, Inc. Static-random-access memory cell with trench transistor and enhanced stability
JP3804375B2 (ja) 1999-12-09 2006-08-02 株式会社日立製作所 半導体装置とそれを用いたパワースイッチング駆動システム
JP3531613B2 (ja) 2001-02-06 2004-05-31 株式会社デンソー トレンチゲート型半導体装置及びその製造方法
JP2003115587A (ja) 2001-10-03 2003-04-18 Tadahiro Omi ＜１１０＞方位のシリコン表面上に形成された半導体装置およびその製造方法
US8080459B2 (en) 2002-09-24 2011-12-20 Vishay-Siliconix Self aligned contact in a semiconductor device and method of fabricating the same
JP4190906B2 (ja) * 2003-02-07 2008-12-03 信越半導体株式会社 シリコン半導体基板及びその製造方法
US9685524B2 (en) 2005-03-11 2017-06-20 Vishay-Siliconix Narrow semiconductor trench structure
TWI489557B (zh) 2005-12-22 2015-06-21 Vishay Siliconix 高移動率ｐ-通道溝槽及平面型空乏模式的功率型金屬氧化物半導體場效電晶體
US8409954B2 (en) 2006-03-21 2013-04-02 Vishay-Silconix Ultra-low drain-source resistance power MOSFET
US9437729B2 (en) 2007-01-08 2016-09-06 Vishay-Siliconix High-density power MOSFET with planarized metalization
US9947770B2 (en) 2007-04-03 2018-04-17 Vishay-Siliconix Self-aligned trench MOSFET and method of manufacture
US20090072277A1 (en) * 2007-09-17 2009-03-19 Dsm Solutions, Inc. System and Method for Enabling Higher Hole Mobility in a JFET
US9484451B2 (en) 2007-10-05 2016-11-01 Vishay-Siliconix MOSFET active area and edge termination area charge balance
US9425306B2 (en) 2009-08-27 2016-08-23 Vishay-Siliconix Super junction trench power MOSFET devices
US9443974B2 (en) 2009-08-27 2016-09-13 Vishay-Siliconix Super junction trench power MOSFET device fabrication
US9431530B2 (en) 2009-10-20 2016-08-30 Vishay-Siliconix Super-high density trench MOSFET
US9412883B2 (en) 2011-11-22 2016-08-09 Taiwan Semiconductor Manufacturing Company, Ltd. Methods and apparatus for MOS capacitors in replacement gate process
US9842911B2 (en) 2012-05-30 2017-12-12 Vishay-Siliconix Adaptive charge balanced edge termination
US9887259B2 (en) 2014-06-23 2018-02-06 Vishay-Siliconix Modulated super junction power MOSFET devices
EP3183754A4 (en) 2014-08-19 2018-05-02 Vishay-Siliconix Super-junction metal oxide semiconductor field effect transistor
KR102026543B1 (ko) 2014-08-19 2019-09-27 비쉐이-실리코닉스 전자 회로

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5681974A (en) * 1979-12-07 1981-07-04 Toshiba Corp Manufacture of mos type semiconductor device
JPS6158228A (ja) * 1984-08-29 1986-03-25 Oki Electric Ind Co Ltd 半導体基板
DE3780895T2 (de) * 1986-09-24 1993-03-11 Nippon Electric Co Komplementaerer feldeffekt-transistor mit isoliertem gate.

Also Published As

Publication number Publication date
EP0354449A3 (en) 1991-01-02
EP0354449A2 (en) 1990-02-14

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