TWI489557B - 高移動率ｐ-通道溝槽及平面型空乏模式的功率型金屬氧化物半導體場效電晶體 - Google Patents

高移動率ｐ-通道溝槽及平面型空乏模式的功率型金屬氧化物半導體場效電晶體 Download PDF

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TWI489557B
TWI489557B TW095147906A TW95147906A TWI489557B TW I489557 B TWI489557 B TW I489557B TW 095147906 A TW095147906 A TW 095147906A TW 95147906 A TW95147906 A TW 95147906A TW I489557 B TWI489557 B TW I489557B
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plane
wafer
mosfet
germanium
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Deva Pattanayak
Kuo-In Chen
The-Tu Chau
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Vishay Siliconix
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Description

高移動率P-通道溝槽及平面型空乏模式的功率型金屬氧化物半導體場效電晶體
本發明係為一種高移動率P-通道的溝槽功率型金屬氧化物半導體場效電晶體。
 發明背景
已知有一段相當時間，電洞在(110)晶面中的移動率係取決於電流(在<110>方向為最大)的方向(D.Colman等人，應用物理期刊，第1923至1931頁，1968年)。他們的實驗結果圖示於第1圖的曲線圖。由第1圖的曲線圖可見，與習知(100)取向相比，顯然，取決於閘極偏壓，電洞移動率增加到兩倍以上。
Plummer等人也報導(1980 IEDM，第104至106頁)一種在(100)晶圓上製成且溝槽側壁平行於(110)晶面的溝槽功率型MOSFET，與溝槽壁平行於(110)平面但電流方向也為<100>方向的對應溝槽MOSFET相比，在閘極電壓較高時會有較高的電洞移動率。
最近，有許多作者重申電洞移動率在(110)平面和<110>方向為最高這件事實(H.Irie等人，IEDM，第225至228頁，2004年及其參考文獻)。有一種溝槽橫向型裝置的專利也已頒給Wendell P.Noble等人(美國專利第6,580,154號，2003年6月17日發行)。
就吾等所知，目前已發行的專利中還沒有把電洞限制成只能在(110)平面與<110>方向中流動的垂直溝槽 MOSFET或平面型DMOSFET。
依據本發明之一實施例，係特地提出一種用於產生一溝槽金屬氧化物半導體場效電晶體(MOSFET)裝置的方法，該方法係包含：使用一以方向為表面取向的矽晶圓；蝕刻一在平面或等效平面中的溝槽；以及，施加一相對於該MOSFET裝置之源極為負的電壓於該MOSFET裝置之一閘極，而在反轉通道中產生一在平面或等效平面和方向中流動的電流。
依據本發明之一實施例，係特地提出一種平面型DMOSFET P-通道結構，其係包含：一以方向為表面取向的矽晶圓；一在平面和方向中流動的電流。
依據本發明之一實施例，係特地提出一種累積型溝槽金屬氧化物半導體場效電晶體(MOSFET)裝置，其係包含：一以方向為表面取向的矽晶圓；一在平面或等效平面中蝕刻而成的溝槽；一相對於該MOSFET裝置之源極為負的電壓，其係施加於該MOSFET裝置之一閘極，而在反轉通道中產生一在平面或等效平面和方向中流動的電流；一累積層，其係具有平面取向；以及，一經由該累積層而在方向中流動的電流。
 較佳實施例之詳細說明
為了解釋本發明，以用來製作習知P通道的溝槽功率型MOSFET、示意圖示於第2圖的習知晶圓開始。由第2圖可 見，溝槽MOSFET內的電流方向(電流是由正面流到底面)永遠都是在<100>方向。
在此類晶圓上，有可能旋轉該等溝槽使得電流的平面是在(110)平面中。第3圖、第4圖、第5圖、第6圖、第7圖圖示不同轉向的溝槽。垂直溝槽與水平溝槽的平面都在等效的(100)平面上而經旋轉溝槽都在(110)或等效平面上。應注意，第5圖的晶粒(C)與第6圖的晶粒(D)已製成且正在分析資料。初步分析顯示該經旋轉溝槽之裝置的總電阻(亦即，當電流是在(110)平面中時)小於溝槽是在(100)平面中的控制裝置。
為了實現電流在(110)平面中流動且方向是在<110>方向中的溝槽MOSFET，最好用以<110>方向為表面取向的晶圓開始，亦即，選定平坦面(flat)為(110)平面的。這圖示於第8圖。在第8圖的此一晶圓上，TrenchFET遮罩可經設計成能使得該等溝槽平行及/或垂直於(110)平坦面，如第9圖與第10圖所示。圖示於第9圖、第10圖的溝槽可經蝕刻成呈平行或垂直於該平坦面，從而平行於該平坦面的溝槽都在(110)或等效平面中。晶圓表面取向在<110>方向中，所以電洞的流動方向也在<110>方向中。第11圖圖示一溝槽MOSFET結構的示意圖以及晶面方向。
圖示於第12圖的平面型DMOSFET P通道結構在(110)平面和<110>方向中也會有電流。
儘管繪於第11圖與第12圖的結構為用於溝槽及平面型DMOSFET的傳統形狀，基板晶圓(substrate wafer)的選擇可能為關鍵，如上述，因為電流方向可能不是在[110]方向，除非 晶圓是依照此一方向成長，亦即，表面的取向是在[110]方向。
不同的晶面會有不同的氧化物成長速率。與[100]方向相比，在[110]方向的成長較快。(110)平面的表面電荷約為(100)平面的兩倍。在設計高移動率型MOSFET的必要臨界電壓時，最好考慮到這些事實。
第13圖為一高移動率型P通道裝置的示意圖，在此於電流導通期間MOS閘極會反轉通道(N型本體)且累積電荷在輕度摻雜累積區(accumulation region)(P型層)。
在延伸進入漂移區(drift region)的PN接面處會支撐崩潰電壓。不過，不像傳統溝槽MOSFET，漂移電阻由兩個平行分量組成：一為累積區的電阻，另一為漂移區的電阻。累積電阻分量小於漂移區電阻的分量。以最佳方式選定的累積型通道(亦即，電流是在(110)平面與<110>方向中，如上述)和漂移區的總電阻會實質低於沒有像本臨時專利申請案所述那樣正確地選定之基板取向的傳統累積功率型MOSFET的對應數值。
本發明藉由選定累積層的平面與方向為(110)平面與<110>方向，累積層的電阻會大約減少一半。
下列之概念係可受上述本申請案之內容所支持：
概念1. 一種垂直溝槽MOSFET，其中電洞電流係被限制而流動於一平面以及一方向。
概念2. 如概念1之垂直溝槽MOSFET，其係於一晶圓中被製得。
概念3. 如概念2之垂直溝槽MOSFET，其中該電洞電流 係反應以將一相對於該MOSFET之源極為負的電壓施加於該MOSFET裝置之一閘極。
概念4. 一種用於平面DMOSFET之通道結構，其包含：一P通道；具有以方向為表面取向之矽晶圓；一流動於一平面上之電流，以及一電流流動於一方向。
概念5. 一種功率型MOSFET結構，包含：一閘極；一源極；一反轉/累積通道；其中電動流動於該反轉/累積通道； 其中該通道係沿著一結晶平面對齊；且其中當相對於該源極為負的電壓被施加於該閘極，該流動係於一方向。
概念6. 一種製造一溝槽MOSFET之方法，該方法包含：使用在一方向具有表面取向的矽晶圓，以及在平面或等效平面中蝕刻一溝槽。
概念7. 如概念6之方法，其中當與一相對於該源極被施加於該MOSFET裝置之閘極之負的電壓共同操作時，該溝槽MOSFET包含一電流流動於反轉通道，其係於該平面或等效平面以及於該方向。
<110>‧‧‧方向
(110)‧‧‧平面取向
[110]‧‧‧方向
第1圖為實驗結果之曲線圖；第2圖為用來製作習知P通道的溝槽功率型MOSFET之習知晶圓；第3、4、5、6、7圖為不同轉向之溝槽；第8圖為以<110>方向為表面取向之晶圓；第9、10圖為經設計而可平行或垂直於(110)平坦面之溝槽； 第11圖為一溝槽MOSFET結構之示意圖；第12圖為一平面型DMOSFET P通道結構之示意圖；第13圖為一高移動率型P通道裝置之示意圖。
<110>‧‧‧方向

Claims (5)

  1. 一種用於產生溝槽金屬氧化物半導體場效電晶體(MOSFET)裝置的方法，該方法係包含：使用具有一<110>方向之表面取向(orientation)的一矽基板晶圓；蝕刻出在該矽基板晶圓的一第一表面上之一(110)平面中的一溝槽；形成在該溝槽內的一閘極；形成鄰接於該溝槽的一源極；以及形成鄰接於一該矽基板晶圓中之與該第一表面相對之第二表面的一汲極，其中一電洞電流係限制於在該(110)平面和在該<110>方向中流動通過該矽基板晶圓。
  2. 如請求項1之方法，其中該溝槽係以45度轉向在一晶粒上形成。
  3. 一種平面型DMOSFET P-通道結構，其係包含：具有一<110>方向之表面取向的矽基板晶圓；在該基板矽晶圓之一第一表面上的一平面型閘極；鄰接於該平面型閘極的一源極；以及鄰接於一該矽基板晶圓中之與該第一表面相對之第二表面的一汲極，其中一電洞電流係限制於在一(110)平面和在該<110>方向中流動通過該矽基板晶圓。
  4. 一種累積型溝槽金屬氧化物半導體場效電晶體(MOSFET)裝置，其係包含：具有一<110>方向之表面取向的一矽晶圓； 在該矽晶圓之一(110)平面中蝕刻而成的一溝槽；形成於該溝槽內的一閘極；鄰接於該溝槽及該矽晶圓之一第一表面的一源極；鄰接於與該第一表面相對之一第二表面的一汲極；以及鄰接於該溝槽且具有該(110)平面取向的一累積層，其中一電洞電流係限制於在該(110)平面和在該<110>方向中流動並累積電荷於該累積層中。
  5. 如請求項4之累積型溝槽金屬氧化物半導體場效電晶體(MOSFET)裝置，其中該溝槽係以45度轉向在一晶粒上形成。
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