TWI426607B - 積體電路、鰭式場效電晶體及其製造方法 - Google Patents
積體電路、鰭式場效電晶體及其製造方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 15
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 238000009825 accumulation Methods 0.000 title description 13
- 230000005669 field effect Effects 0.000 claims description 67
- VGRFVJMYCCLWPQ-UHFFFAOYSA-N germanium Chemical compound [Ge].[Ge] VGRFVJMYCCLWPQ-UHFFFAOYSA-N 0.000 claims description 42
- 229910052732 germanium Inorganic materials 0.000 claims description 35
- 239000000758 substrate Substances 0.000 claims description 29
- 239000004065 semiconductor Substances 0.000 claims description 22
- 229910052797 bismuth Inorganic materials 0.000 claims description 5
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 5
- 229910005898 GeSn Inorganic materials 0.000 claims description 4
- MRPWWVMHWSDJEH-UHFFFAOYSA-N antimony telluride Chemical compound [SbH3+3].[SbH3+3].[TeH2-2].[TeH2-2].[TeH2-2] MRPWWVMHWSDJEH-UHFFFAOYSA-N 0.000 claims description 2
- 229910052787 antimony Inorganic materials 0.000 claims 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims 1
- 108091006146 Channels Proteins 0.000 description 75
- 230000001186 cumulative effect Effects 0.000 description 21
- 230000007547 defect Effects 0.000 description 18
- 230000000694 effects Effects 0.000 description 14
- 238000002955 isolation Methods 0.000 description 12
- 229910052715 tantalum Inorganic materials 0.000 description 8
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 8
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 8
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- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 3
- 229910052684 Cerium Inorganic materials 0.000 description 3
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 3
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 3
- 229910000420 cerium oxide Inorganic materials 0.000 description 3
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 3
- 238000005530 etching Methods 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 229910052691 Erbium Inorganic materials 0.000 description 1
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- 102000004129 N-Type Calcium Channels Human genes 0.000 description 1
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 1
- 229910006501 ZrSiO Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
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- SCCCLDWUZODEKG-UHFFFAOYSA-N germanide Chemical compound [GeH3-] SCCCLDWUZODEKG-UHFFFAOYSA-N 0.000 description 1
- GPMBECJIPQBCKI-UHFFFAOYSA-N germanium telluride Chemical compound [Te]=[Ge]=[Te] GPMBECJIPQBCKI-UHFFFAOYSA-N 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
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- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823431—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- H01L29/7851—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET with the body tied to the substrate
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- H01L2029/7857—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET of the accumulation type
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Description
本發明係有關於一種半導體裝置,且特別是有關於一種累積型(accumulation type)鰭式場效電晶體。
隨著積體電路尺寸微縮,需克服因尺寸微縮所面臨的問題。例如,金氧半場效電晶體(MOSFET)因通道長度縮減而造成效能降低,包括漏電流增加。因此,業界需要新穎的方法及結構來改善金氧半場效電晶體的效能。
本發明提供一種鰭式場效電晶體,包括:一基材;一鰭式結構,位於此基材上,此鰭式結構包含一通道,位於一源極及一汲極之間,其中此源極、此汲極及此通道具有一第一型摻雜,且此通道包含鍺、鍺化矽或III-V族半導體至少其一;一閘極介電層,位於此通道上;以及一閘極,位於此閘極介電層上。
本發明亦提供一種鰭式場效電晶體之製造方法,包括:形成一鰭式結構於一基材上,此鰭式結構包含一通道,位於一源極及一汲極之間,其中此源極、此汲極及此通道具有一第一型摻雜,且此源極、此汲極及此通道包含鍺、鍺化矽或III-V族半導體;形成一閘極介電層於此通道上;以及形成一閘極於此閘極介電層上。
本發明更提供一種積體電路,包括:一基材;一虛置圖案,包含至少一第一鰭式結構於此基材上,此第一鰭式結構包含一第一通道,位於一第一源極及一第一汲極之間,其中此第一源極、此第一汲極及此第一通道具有一第一型摻雜;以及一鰭式場效電晶體,位於此基材上,此鰭式場效電晶體包含:一第二鰭式結構,位於此基材上,此第二鰭式結構包含一第二通道,位於一第二源極及一第二汲極之間,其中此第二源極、此第二汲極及此第二通道具有一第二型摻雜,且此第二通道包含鍺、鍺化矽或III-V族半導體至少其一;一閘極介電層,位於此第二通道上;及一閘極,位於此閘極介電層上。
為讓本發明之上述和其他目的、特徵、和優點能更明顯易懂,下文特舉出較佳實施例,並配合所附圖式,作詳細說明如下:
以下將詳細討論本發明各種實施例之製造及使用方法。然而值得注意的是,本發明所提供之許多可行的發明概念可實施在各種特定範圍中。這些特定實施例僅用於舉例說明本發明之製造及使用方法,但非用於限定本發明之範圍。
某些使用材料不同於矽之平面金氧半場效電晶體相較於傳統的矽平面金氧半裝置(Si planar MOS device)具有優勢,例如鍺平面金氧半裝置(Ge planar MOS device),其載子(電子/電洞)遷移率較矽高約2.64倍。經發現,鍺平面MOS裝置面臨下列問題:(1)較低的能隙間距Eg
及高次臨界漏電流Isub
(subthreshold leakage current)、(2)高介電常數ε及短通道效應(short channel effect,SCE)、(3)高界面缺陷(Nit)導致鍺的NMOS中的載子遷移率μ不佳。
當通道長度縮短時,平面金氧半場效電晶體可具有的通道長度與源極及汲極所接合的空乏層的寬度具有相同的數量級。相較於其他金氧半場效電晶體,短通道效應使平面金氧半場效電晶體的效能更加衰退。當縮短通道長度以同時增加操作速度及晶片積集度時,短通道效應亦會增加。短通道效應可歸因於兩種物理現象:(1)通道中的電子漂移有其限制,及(2)由於通道縮短而修改了臨界電壓。短通道效應包含:(1)汲極引致能障下降(drain-induced barrier lowering,DIBL)、(2)表面散射、(3)速度飽和、(4)撞擊游離及(5)熱電子。特別的是,由於鍺平面型MOS具有較高的介電常數ε,顯示出更糟的汲極引致能障下降(DIBL)。
在鍺的NMOS中,發現到在介電層及靠近鍺的導帶(Ec)之間的界面有高密度的界面缺陷(Nit),而大幅降低電子遷移率。相較於二氧化矽與矽的系統,氧化鍺(或其他介電層)及鍺不具有理想的界面,二氧化矽/矽具有良好的界面而提供矽的MOS所需的界面品質及低界面缺陷。
如上所述,業界所需的是金氧半場效電晶體結構及其製造方法。在本發明實施例中,係提供一種累積型鰭式場效電晶體(accumulation-type FinFET)裝置100,以增進金氧半場效電晶體的效能。第1A圖顯示為一實施例之鰭式場效電晶體。在第1A圖中,鰭式場效電晶體100可包含鰭式結構102。第1B及1C圖各自顯示第1A圖所示之鰭式場效電晶體100沿著線段1B及1C之剖面圖。在第1A-1B圖中,顯示累積型鰭式場效電晶體100具有基材120及鰭式結構102於基材120上。鰭式結構102包含位於源極106及汲極110之間的通道108。源極106、汲極110及通道108具有第一型摻雜。位於源極106、汲極110及通道108之下的井區112具有第二型摻雜。通道108包含鍺、鍺化矽或III-V族半導體。閘極介電層114位於通道108上。閘極116位於閘極介電層114上。
在一形成鍺的N型累積型鰭式場效電晶體(N-type accumulation Ge FinFET)之實施例中,源極106(例如n+源極區)可透過矽化物107連接至源極電壓VS
。通道108(例如n-通道區)可例如包含鍺鰭式區(Ge fin region)。汲極110(例如n+汲極區)可透過矽化物111連接至汲極電壓VD
。井區112(例如p型井區)可提供與其他裝置電性隔離。閘極介電層114可包含氧化物、氮化物、氮氧化物、高介電常數介電質或前述之任意組合。閘極116(例如金屬閘極)可連接至閘極電壓VG
。氧化層115及氮化間隔物117顯示位於閘極116後方。基材120可包含矽、鍺、鍺化矽、III-V族半導體及/或前述之組合。高介電常數材料可例如包含矽酸鉿(HfSiO)、矽酸鋯(ZrSiO4
)、二氧化鋯、其他高介電常數介電材料或前述之任意組合。在其他實施例中,通道108可包含鍺化矽或III-V族半導體,例如AlGaAs、InGaAs等。
第1C圖顯示為累積型鰭式場效電晶體100之剖面圖,其具有通道108、閘極介電層114及閘極116。位於鰭底下的井區112提供電性隔離。在一實施例中,通道108(例如n-通道)包含鍺鰭式區。井區112(例如p型井區)提供電性隔離。閘極116可設置於閘極介電層114上。淺溝槽隔離118可形成鄰近於井區112。在其他實施例中,通道108可包含鍺化矽或III-V族半導體,例如AlGaAs、InGaAs等。
在N型累積型鰭式場效電晶體102中,通道108、源極106及汲極110可具有n型摻雜。在另一實施例中,P型累積型PMOS裝置之通道108、源極106及汲極110可具有p型摻雜。累積型鰭式場效電晶體可改變電子/電洞輪廓(electron/hole profile)及費米能階(EF
)位置,其可抑制界面缺陷(Nit)的影響。此外,可摻入鍺化矽應力源至鍺的鰭式場效電晶體NMOS中,以增進效能。
於傳統反轉型(inversion type)NMOS(具有p-通道)中,電子堆積在界面層,且裝置可能會因界面缺陷而降低遷移率。然而,累積型NMOS與傳統反轉型NMOS相反,塊材反轉(bulk inversion)減少了可造成降低次臨界電流擺幅及電子遷移率的界面缺陷。塊材反轉(bulk inversion)意指大多數的反轉電荷位於第1C圖所示之鰭中的塊材鰭狀區(bulk Fin region)作為內部電子(bulk electrons)。然而,在傳統的表面反轉型裝置中,大多數電子堆積於閘極介電質/鰭的表面作為表面電子。使用等同於電源供應電壓的閘極電壓(VG
=VDD),累積的費米能階較靠近能隙(Eg)中間值(mid-bandgap),且可實質上減少界面缺陷(Nit)的影響。
經發現,通道摻雜濃度及/或施予汲極110之電源供應電壓VDD可影響累積型鰭式場效電晶體100之電性效能。例如,在NMOS/PMOS之一實施例中,通道中之反摻雜密度(counter doping density)為n型/p型1e18cm-3
~3e18cm-3
,電源供應電壓VDD為0.5V。在NMOS累積型裝置中,n型通道可減少費米能階(EF
),增加內部電子密度(bulk electron density),因此減少表面界面缺陷(Nit)的影響。例如,在一累積型NMOS之實施例中,電子密度為7.1e12cm-2
,相比較之反轉型NMOS之電子密度為6.7e12cm-2
。此外,低的電源供應電壓VDD使費米能階EF
移向能隙中間值,增加內部電子/電洞百分比,及減少在NMOS/PMOS中之表面界面缺陷(Nit)的影響。
鍺及III-V族半導體通道材料,例如AlGaAs、InGaAs等,可提供較矽高的載子遷移率。鰭式場效電晶體結構提供較佳的閘極控制、較低的漏電流及較佳的尺寸可調性(scalability)。基材120可為矽或鍺基材晶圓。在一實施例中,可在基材120上進行鍺的磊晶,以形成用於通道108之鍺鰭(Ge-fin)。在NMOS之實施例中,由於鍺化矽或矽的源極/汲極可在通道108中(例如鍺通道)具有拉伸應力以提高電子遷移率,較佳可選擇鍺化矽或矽的源極/汲極。在P型金氧半導體之實施例中,也可使用鍺的源極/汲極區,但較佳為GeSn、SiGeSn或III-V族半導體,係由於GeSn、SiGeSn或III-V族半導體源極/汲極可在通道108(例如鍺通道)中具有壓縮應力以提高電洞遷移率。
具有鍺鰭式通道區108之鰭式場效電晶體結構可幫助降低由高介電常數ε所導致的短通道效應(SCE)。在累積型裝置中,鰭式場效電晶體結構可顯著抑制漏電流。相較於平面裝置,鰭式場效電晶體結構可藉由較低的通道摻雜(例如1e17cm-3
)及降低的電源供應電壓VDD來顯著減少能帶穿遂(Band to band tunneling,BTBT)漏電流。
第2圖顯示本發明一實施例之鍺的累積型鰭式場效電晶體與傳統裝置之開電流Ion
(turn-on current)的比較。結果呈現在NMOS中,鰭的表面區域之電子遷移率降低了80%,這是由於在鍺裝置中的界面缺陷Nit(陷阱)的影響。
在第2圖中,顯示傳統無界面缺陷(Nit)的矽反轉型鰭式場效電晶體NMOS之開電流Ion
。將鍺的鰭式場效電晶體之開電流Ion
正規化並與矽的反轉型鰭式場效電晶體相比,具有界面缺陷之鍺的反轉型鰭式場效電晶體NMOS裝置僅有74%之開電流Ion
,這是由於電子遷移率在鰭表面上因鍺的界面缺陷而降低。易言之,由TACD模擬可顯示出,相較於矽的場效電晶體(反轉模式),界面缺陷造成了開電流Ion
降低26%。上述之鍺的反轉型鰭式場效電晶體NMOS,非為累積型態且不具有應力源。然而,具有累積型態之鍺的反轉型鰭式場效電晶體NMOS裝置,雖然同樣具有鍺的界面缺陷,但開電流Ion
增加至108%。因此,使用累積型通道可實現34%增益的開電流Ion
,亦表示鍺的累積型通道之開電流Ion
較矽的鰭式場效電晶體高8%。再者,當加入鍺化矽(SiGe)應力源,開電流Ion
更增進至132%。在一些實施例中,更可使用表面鈍化技術以進一步降低鍺累積型鰭式場效電晶體的界面缺陷。
在累積型裝置中,鰭區(Wfin
)的寬度較窄,可抑制閉路漏電流Ioff
及改善裝置效能因短通道效應(SCE)/汲極引致能障下降(DIBL)的影響。在一實施例中,鰭寬度小於30 nm而具有較佳的效能。在鰭區(Wfin
)較寬之平面結構中,需高濃度袋狀摻雜(pocket doping)且實際上較難製造累積型通道。
此外,累積型裝置顯示在塊材區域具有較高的電子密度,特別是在低的電源供應電壓VDD及閘極電壓VG
(例如0.5V)。第3圖顯示本發明一實施例之塊材內部電子密度與傳統裝置的比較。如第3圖所示,在一實施例中,在閘極電壓為0.5V的條件下,鍺的累積型鰭式場效電晶體約有70%的內部電子密度,相較之下,反轉型裝置則具有約40%的內部電子體積密度。鍺的累積型鰭式場效電晶體NMOS裝置具有約1e18cm-3
(N型)之通道摻雜密度,及汲極引致能障下降(DIBL)為105 mV/V,然而,反轉型態裝置之通道摻雜濃度為5e18cm-3
(p型)。
第4圖顯示依照本發明另一實施例製造鰭式場效電晶體之製程流程圖。於步驟402,形成鰭式結構於基材120上,其中鰭式結構包含位於源極106及汲極110之間的通道108(源極106、汲極110及通道108皆具有相同型態之半導體,且通道108包含鍺、鍺化矽或III-V族半導體)。於步驟404,形成閘極介電層104(例如氧化物及/或高介電常數介電質)於通道108上。於步驟406,形成閘極116於閘極介電層114上。此製程可更包含沉積及蝕刻淺溝槽隔離(shallow trench isolation,STI)118層,其可提供與鄰近裝置的隔離。
此製程可更包含在源極106、汲極110及通道108下方形成井區112,其中井區112具有第二型摻雜。通道108可具有約1e18cm-3
至3e18cm-3
之摻雜濃度。閘極116能接收電壓,且此電壓能使通道的費米能階移向通道之能隙中間值。形成鰭式結構可包含定義通道108的寬度。在一實施例中,通道108的寬度可為約30 nm或更小。源極106或汲極110至少其一包含用於NMOS裝置之鍺、鍺化矽或矽。源極106或汲極110至少其一包含用於NMOS裝置之鍺、鍺化矽、矽或III-V族半導體。
第5圖顯示為依照本發明又一實施例之包含虛置圖案及含多個累積型鰭式場效電晶體結構之鰭式場效電晶體裝置之積體電路。積體電路包含基材120、虛置圖案502及鰭式場效電晶體裝置504、506。虛置圖案502包含至少一鰭式結構於基材上。鰭式結構包含位於第一源極及第一汲極之間的通道508。此源極、汲極及通道508具有第一型摻雜。井區112具有第二型摻雜,並提供與其他鄰近裝置之電性隔離。
位於基材120上之鰭式場效電晶體裝置504、506亦包含位於基材120上之鰭式結構。鰭式結構包含位於源極及汲極之間的通道。此源極、汲極及第二通道108具有第一型摻雜。通道108包含鍺、鍺化矽或III-V族半導體。閘極介電層114位於通道108上。閘極116位於閘極介電層114上。在此實施例中,在同一裝置中使用多個通道108。
此裝置具有累積型通道,因而鰭式場效電晶體裝置504、506具有相同型態之半導體之通道108、源極、汲極,例如各自用於NMOS/PMOS之n型/p型半導體。用於NMOS之井區112為p型,而用於PMOS之井區112為n型,此井區112與淺溝槽隔離(STI)各自用作裝置間的電性隔離及物理隔離。也可設置無閘極116之虛置圖案502,以利於化學機械研磨(CMP)、蝕刻或鰭式輪廓的一致性。此裝置可形成於矽或鍺基材120上。
如前述,累積型鰭式場效電晶體可提供所需電子或電洞遷移率,而可增進裝置效能。藉由使用累積型鰭式場效電晶體結構,漏電流、界面缺陷(陷阱)及短通道效應等先前傳統鍺平面裝置所具之缺點,已不復存於本發明實施例中。在本實施中,不僅可應用於鍺通道、也可應用於鍺化矽或其他III-V族通道材料。
再者,在同一裝置中可使用多個鰭式結構,而可提供每單位面積有較高的電流。例如,既然鍺及矽之間有晶格失配(lattice mismatch),較窄的鰭相較於較寬的鰭易於成長良好品質的鍺磊晶層。晶格失配導致的應力可由寬度較窄的鰭及缺陷及錯位較少的鍺磊晶層獲得抒解。例如,當用於傳統鍺裝置之鰭寬度為50 nm時,其可被分隔成兩個25nm的鰭。本領域具有通常知識者可知本發明尚具有許多其他變化實施例。
雖然本發明已以數個較佳實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明之精神和範圍內,當可作任意之更動與潤飾。此外,本發明之範圍不限定於現有或未來所發展的特定程序、機器、製造、物質之組合、功能、方法或步驟,其實質上進行與依照本發明所述之實施例相同的功能或達成相同的結果。因此,本發明之保護範圍當視後附之申請專利範圍所界定者為準。此外,每個申請專利範圍建構成一獨立的實施例,且各種申請專利範圍及實施例之組合皆介於本發明之範圍內。
106...源極
108...通道
107...矽化物
110...汲極
111...矽化物
112...井區
114...閘極介電層
115...氧化層
116...閘極
117...氮化間隔層
118...淺溝槽隔離
120...基材
502...虛置圖案
504...鰭式場效電晶體裝置
506...鰭式場效電晶體裝置
508...通道
第1A圖顯示為鰭式場效電晶體,並顯示用於第1B及1C圖之不同的剖面方向;
第1B~1C圖顯示為依照本發明一實施例之累積型鰭式場效電晶體之剖面圖;
第2圖顯示為依照本發明一實施例之累積型鰭式場效電晶體與傳統裝置之開電流Ion
之比較;
第3圖顯示為本發明一實施例之累積型鰭式場效電晶體與傳統裝置之內部電子密度之比較;
第4圖顯示為依照本發明另一實施例之形成累積型鰭式場效電晶體之製程;及
第5圖顯示為依照本發明又一實施例之具有虛置圖案及含多個累積型鰭式場效電晶體結構之鰭式場效電晶體裝置之積體電路之剖面圖。
106...源極
108...通道
107...矽化物
110...汲極
111...矽化物
112...井區
114...閘極介電層
115...氧化層
116...閘極
117...氮化間隔層
118...淺溝槽隔離
120...基材
Claims (10)
- 一種鰭式場效電晶體,包括:一基材,包含一具有一第一型摻雜之井區;一鰭式結構,位於該基材之該井區上,該鰭式結構包含一通道,位於一源極及一汲極之間,其中該源極、該汲極及該通道具有一與該第一型摻雜不同之第二型摻雜,且該通道包含鍺、鍺化矽或III-V族半導體至少其一;以及一閘極介電層,位於該通道上;以及一閘極,位於該閘極介電層上。
- 如申請專利範圍第1項所述之鰭式場效電晶體,其中該通道之摻雜濃度介於約1e18 cm-3 至3e18 cm-3 之間。
- 如申請專利範圍第1項所述之鰭式場效電晶體,其中該閘極能接受一電壓,且該電壓能使該通道之費米能階移向該通道之能隙中間值。
- 如申請專利範圍第1項所述之鰭式場效電晶體,其中該鰭式場效電晶體為一N型鰭式場效電晶體,且該源極及該汲極至少其一包含鍺、鍺化矽或矽至少其一。
- 如申請專利範圍第1項所述之鰭式場效電晶體,其中該鰭式場效電晶體為一P型鰭式場效電晶體,且該源極及該汲極至少其一包含Ge、GeSn、SiGeSn或III-V族半導體至少其一。
- 一種鰭式場效電晶體之製造方法,包括:提供一基材,其包含一具有一第一型摻雜之井區;形成一鰭式結構於該基材之該井區上,該鰭式結構 包含一通道,位於一源極及一汲極之間,其中該源極、該汲極及該通道具有一與該第一型摻雜不同之第二型摻雜,且該源極、該汲極及該通道包含鍺、鍺化矽或III-V族半導體;形成一閘極介電層於該通道上;以及形成一閘極於該閘極介電層上。
- 如申請專利範圍第6項所述之鰭式場效電晶體之製造方法,其中該通道之摻雜濃度介於約1e18 cm-3 至3e18 cm-3 之間。
- 一種積體電路,包括:一基材,包含一具有一第一型摻雜之井區;一虛置圖案,包含至少一第一鰭式結構於該基材之該井區上,該第一鰭式結構包含一第一通道,位於一第一源極及一第一汲極之間,其中該第一源極、該第一汲極及該第一通道具有一與該第一型摻雜不同之第二型摻雜;以及一鰭式場效電晶體,位於該基材之該井區上,該鰭式場效電晶體包含:一第二鰭式結構,位於該基材之該井區上,該第二鰭式結構包含一第二通道,位於一第二源極及一第二汲極之間,其中該第二源極、該第二汲極及該第二通道具有該第二型摻雜,且該第二通道包含鍺、鍺化矽或III-V族半導體至少其一;一閘極介電層,位於該第二通道上;及一閘極,位於該閘極介電層上。
- 如申請專利範圍第8項所述之積體電路,其中該第二通道之摻雜濃度介於約1e18 cm-3 至3e18 cm-3 之間。
- 如申請專利範圍第8項所述之積體電路,其中該第二源極及該第二汲極至少其一包含鍺、鍺化矽、矽、GeSn、SiGeSn或III-V族半導體至少其一。
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US8264032B2 (en) | 2012-09-11 |
JP5373722B2 (ja) | 2013-12-18 |
US8896055B2 (en) | 2014-11-25 |
US20110049613A1 (en) | 2011-03-03 |
TW201110352A (en) | 2011-03-16 |
US20120306002A1 (en) | 2012-12-06 |
CN102005477A (zh) | 2011-04-06 |
KR20140083964A (ko) | 2014-07-04 |
JP2011061196A (ja) | 2011-03-24 |
KR20110025075A (ko) | 2011-03-09 |
CN102005477B (zh) | 2013-10-02 |
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