JP4427489B2 - 半導体装置の製造方法 - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims description 28
- 239000004065 semiconductor Substances 0.000 title claims description 25
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 114
- 239000000758 substrate Substances 0.000 claims description 91
- 238000000034 method Methods 0.000 claims description 49
- 239000012298 atmosphere Substances 0.000 claims description 38
- 230000001590 oxidative effect Effects 0.000 claims description 33
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- 239000001301 oxygen Substances 0.000 claims description 21
- 229910052760 oxygen Inorganic materials 0.000 claims description 21
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 18
- 238000010438 heat treatment Methods 0.000 claims description 15
- 238000005468 ion implantation Methods 0.000 claims description 6
- -1 oxygen ions Chemical class 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 131
- 239000010408 film Substances 0.000 description 83
- 230000003647 oxidation Effects 0.000 description 78
- 238000007254 oxidation reaction Methods 0.000 description 78
- 239000013078 crystal Substances 0.000 description 40
- 230000008569 process Effects 0.000 description 25
- 125000004429 atom Chemical group 0.000 description 17
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- 239000010409 thin film Substances 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 7
- 238000000137 annealing Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 230000036961 partial effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910000078 germane Inorganic materials 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
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- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
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- 229910001873 dinitrogen Inorganic materials 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78684—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys
- H01L29/78687—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys with a multilayer structure or superlattice structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
- H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
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Description
図1は、本発明の第1の実施形態に係わる半導体装置の製造工程を示す断面図である。
図3は、本発明の第2の実施形態に係わる半導体装置の製造工程を示す断面図である。なお、図1と同一部分には同一符号を付して、その詳しい説明は省略する。
第1の実施形態で説明したように、(100)表面を有するSOI基板上にSiGe層及びSiキャップ層を積層し、酸化濃縮法により緩和SGOI層を形成する工程において、1000℃以下の低温で保護酸化膜を形成する第1の熱酸化工程を導入することにより、その後の高温での酸化濃縮工程(第2の熱酸化工程)時に導入される貫通転位の量を抑制することが可能になり、低転位密度のSGOI基板を得ることが可能である。
なお、本発明は上述した各実施形態に限定されるものではない。第1の実施形態では、埋め込み酸化膜上のSi層上にSiGe層を形成したが、埋め込み酸化膜上に直接SiGe層を形成しても良い。また、第1及び第2の実施形態では、酸化濃縮の前工程としてSiGe層の表面に保護用酸化膜を形成するために、予めSiGe層の表面にSiキャップ層を形成したが、このSiキャップ層は省略することも可能である。これは、Siキャップ層が無くても、後工程の酸化によりSiGe層の表面に酸化膜を形成することができるためである。
11…Si基板
12…埋め込み酸化膜
13…Si層(SOI層)
21…SiGe層
22…Siキャップ層(保護膜)
23…酸化膜(保護膜)
51…埋め込み酸化膜
52…Si層
53…SiGe層
71…埋め込み酸化膜
72…SGOI層
73…歪みSi層
74…ゲート絶縁膜
75…ゲート電極
76…側壁絶縁膜
77…双晶
78…ミスフィット転位
Claims (10)
- 埋め込み酸化膜上にSiGe層が形成された基板を用意する工程と、
前記基板を第1の温度以下で熱処理し、前記SiGe層の表面に保護用酸化膜を形成する工程と、
前記保護用酸化膜が形成された基板を、該基板に対してイオン注入の処理を施すこと無しに、非酸化性雰囲気下で第1の温度よりも高い第2の温度まで昇温する工程と、
前記昇温された基板を酸化性雰囲気下で第2の温度以上で熱処理し、且つ1100℃〜1350℃の温度範囲で熱処理温度を徐々に下げることにより、前記SiGe層を酸化すると共に該SiGe層を薄層化してGe濃度を高め、Ge濃度が高められたSiGe層を形成する工程と、
を含むことを特徴とする半導体装置の製造方法。 - 前記基板を用意する工程として、前記埋め込み酸化膜上にSi層が形成されたSOI基板を用い、このSOI基板上に前記SiGe層を形成することを特徴とする請求項1記載の半導体装置の製造方法。
- 酸素とSi原子を含む層を有し、その上にSiGe層が形成された基板を用意する工程と、
前記基板を第1の温度以下で熱処理し、前記SiGe層の表面に保護用酸化膜を形成する工程と、
前記保護用酸化膜が形成された基板を、非酸化性雰囲気下で第1の温度よりも高い第2の温度まで昇温する工程と、
前記昇温された基板を酸化性雰囲気下で第2の温度以上で熱処理することにより、前記酸素とSi原子を含む層を埋め込み酸化膜に変化させ、且つ前記SiGe層を酸化すると共に該SiGe層を薄層化してGe濃度を高め、Ge濃度が高められたSiGe層を前記埋め込み酸化膜に接して形成する工程と、
を含むことを特徴とする半導体装置の製造方法。 - 前記基板を用意する工程として、Si基板上にSiGe層を形成した後、前記Si基板内に酸素イオンを注入することにより、前記酸素とSi原子を含む層を形成することを特徴とする請求項3記載の半導体装置の製造方法。
- 前記昇温する工程により、前記基板を第2の温度よりも高い第3の温度まで昇温し、この第3の温度で一定時間熱処理した後、前記酸化性雰囲気下の熱処理温度まで降温することを特徴とする請求項3又は4記載の半導体装置の製造方法。
- 主面の軸方位が<100>方向から<011>方向に0.5〜2度傾斜したSOI基板の主面上にSiGe層を形成する工程と、
前記基板を第1の温度以下で熱処理し、前記SiGe層の表面に保護用酸化膜を形成する工程と、
前記保護用酸化膜が形成された基板を非酸化性雰囲気下で第1の温度よりも高い第2の温度まで昇温する工程と、
前記昇温された基板を酸化性雰囲気下で第2の温度以上で熱処理し、前記SiGe層を酸化すると共に該SiGe層を薄層化し、Ge濃度を高められたSiGe層を形成する工程と、
を含むことを特徴とする半導体装置の製造方法。 - 第1の温度は1000℃であり、第2の温度は1100℃であることを特徴とする請求項1,3,又は6記載の半導体装置の製造方法。
- 前記基板を用意する工程として、前記SiGe層を形成した後に、該SiGe層上にSi保護膜を形成することを特徴とする請求項1又は3記載の半導体装置の製造方法。
- 前記Ge濃度が高められたSiGe層上にSi層を形成し、このSi層に格子歪みを持たせることを特徴とする請求項1,3,又は6記載の半導体装置の製造方法。
- 前記格子歪みを持たせたSi層にMOSトランジスタを形成することを特徴とする請求項9記載の半導体装置の製造方法。
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JP2005172548A JP4427489B2 (ja) | 2005-06-13 | 2005-06-13 | 半導体装置の製造方法 |
US11/449,687 US7759228B2 (en) | 2005-06-13 | 2006-06-09 | Semiconductor device and method of manufacturing the same |
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JP2006270000A (ja) * | 2005-03-25 | 2006-10-05 | Sumco Corp | 歪Si−SOI基板の製造方法および該方法により製造された歪Si−SOI基板 |
JP4427489B2 (ja) * | 2005-06-13 | 2010-03-10 | 株式会社東芝 | 半導体装置の製造方法 |
FR2898215B1 (fr) * | 2006-03-01 | 2008-05-16 | Commissariat Energie Atomique | Procede de fabrication d'un substrat par condensation germanium |
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