JP5373722B2 - 蓄積型finfet、回路、及びその製造方法 - Google Patents
蓄積型finfet、回路、及びその製造方法 Download PDFInfo
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- JP5373722B2 JP5373722B2 JP2010194220A JP2010194220A JP5373722B2 JP 5373722 B2 JP5373722 B2 JP 5373722B2 JP 2010194220 A JP2010194220 A JP 2010194220A JP 2010194220 A JP2010194220 A JP 2010194220A JP 5373722 B2 JP5373722 B2 JP 5373722B2
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- 238000003860 storage Methods 0.000 title description 27
- 238000004519 manufacturing process Methods 0.000 title 1
- 229910052732 germanium Inorganic materials 0.000 claims description 51
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 51
- 239000002019 doping agent Substances 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 20
- 229910052710 silicon Inorganic materials 0.000 claims description 19
- 239000010703 silicon Substances 0.000 claims description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 18
- 239000004065 semiconductor Substances 0.000 claims description 18
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 17
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 10
- KAJBHOLJPAFYGK-UHFFFAOYSA-N [Sn].[Ge].[Si] Chemical compound [Sn].[Ge].[Si] KAJBHOLJPAFYGK-UHFFFAOYSA-N 0.000 claims description 4
- IWTIUUVUEKAHRM-UHFFFAOYSA-N germanium tin Chemical compound [Ge].[Sn] IWTIUUVUEKAHRM-UHFFFAOYSA-N 0.000 claims description 4
- 108091006146 Channels Proteins 0.000 description 71
- 230000007547 defect Effects 0.000 description 17
- 230000000694 effects Effects 0.000 description 13
- 238000009825 accumulation Methods 0.000 description 7
- 238000002955 isolation Methods 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 229910021332 silicide Inorganic materials 0.000 description 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 4
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 3
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 229910005898 GeSn Inorganic materials 0.000 description 1
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 1
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 1
- INQLNSVYIFCUML-QZTLEVGFSA-N [[(2r,3s,4r,5r)-5-(6-aminopurin-9-yl)-3,4-dihydroxyoxolan-2-yl]methoxy-hydroxyphosphoryl] [(2r,3s,4r,5r)-5-(4-carbamoyl-1,3-thiazol-2-yl)-3,4-dihydroxyoxolan-2-yl]methyl hydrogen phosphate Chemical compound NC(=O)C1=CSC([C@H]2[C@@H]([C@H](O)[C@@H](COP(O)(=O)OP(O)(=O)OC[C@@H]3[C@H]([C@@H](O)[C@@H](O3)N3C4=NC=NC(N)=C4N=C3)O)O2)O)=N1 INQLNSVYIFCUML-QZTLEVGFSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- DFIYWQBRYUCBMH-UHFFFAOYSA-N oxogermane Chemical compound [GeH2]=O DFIYWQBRYUCBMH-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 1
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
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- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
- H01L29/7848—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate the means being located in the source/drain region, e.g. SiGe source and drain
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- H01L29/76—Unipolar devices, e.g. field effect transistors
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- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
- H01L29/7851—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET with the body tied to the substrate
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- H01L29/76—Unipolar devices, e.g. field effect transistors
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- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823431—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- H01L29/267—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys in different semiconductor regions, e.g. heterojunctions
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- Engineering & Computer Science (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
Description
102 フィン構造
106 ソース
107 シリサイド
108 チャネル
110 ドレイン
111 シリサイド
112 ウェル
114 ゲート誘電体層
115 酸化層
116 ゲート
117 窒化膜スペーサ
118 シャロートレンチアイソレーション
120 基板
502 ダミーパターン
504、506 FinFETデバイス
508 チャネル
Claims (5)
- 第1型ドーパントを含むウェルを有する基板と、
前記基板の前記ウェル上にあり、ソースとドレインとの間のチャネルを含み、前記ソース、前記ドレイン、および前記チャネルは、前記第1型ドーパントと異なる第2型ドーパントを有し、前記チャネルは、ゲルマニウム、シリコンゲルマニウム、またはIII−V族半導体の少なくとも1つを含み且つ約1×10 18 cm −3 〜約3×10 18 cm −3 の間のドーパント濃度を有するフィン構造と、
前記チャネル上のゲート誘電体層と、
前記ゲート誘電体層上のゲートと、
を含むFinFET。 - 前記ゲートは電圧を受けることができ、前記電圧は、前記チャネルのフェルミ準位を前記チャネルのバンドギャップの中間にシフトすることができる請求項1に記載のFinFET。
- 前記FinFETは、N型FinFETであり、前記ソースと前記ドレインの少なくとも1つは、ゲルマニウム、シリコンゲルマニウム、またはシリコンの少なくとも1つを含む請求項1に記載のFinFET。
- 前記FinFETは、P型FinFETであり、前記ソースと前記ドレインの少なくとも1つは、ゲルマニウム、ゲルマニウム錫、シリコンゲルマニウム錫、またはIII−V半導体の少なくとも1つを含む請求項1に記載のFinFET。
- 第1型ドーパントを含むウェルを有する基板を準備し、
前記基板の前記ウェル上に、ソースとドレインとの間のチャネルを含み、前記ソース、前記ドレイン、および前記チャネルは、前記第1型ドーパントと異なる第2型ドーパントを有し、前記チャネルは、ゲルマニウム、シリコンゲルマニウム、またはIII−V族半導体の少なくとも1つを含み且つ約1×10 18 cm −3 〜約3×10 18 cm −3 の間のドーパント濃度を有するフィン構造を形成するステップと、
前記チャネル上にゲート誘電体層を形成するステップと、
前記ゲート誘電体層上にゲートを形成するステップと、
を含むFinFETを形成する方法。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US23882809P | 2009-09-01 | 2009-09-01 | |
US61/238,828 | 2009-09-01 | ||
US12/757,271 | 2010-04-09 | ||
US12/757,271 US8264032B2 (en) | 2009-09-01 | 2010-04-09 | Accumulation type FinFET, circuits and fabrication method thereof |
Publications (2)
Publication Number | Publication Date |
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JP2011061196A JP2011061196A (ja) | 2011-03-24 |
JP5373722B2 true JP5373722B2 (ja) | 2013-12-18 |
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Application Number | Title | Priority Date | Filing Date |
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JP2010194220A Active JP5373722B2 (ja) | 2009-09-01 | 2010-08-31 | 蓄積型finfet、回路、及びその製造方法 |
Country Status (5)
Country | Link |
---|---|
US (2) | US8264032B2 (ja) |
JP (1) | JP5373722B2 (ja) |
KR (2) | KR20110025075A (ja) |
CN (1) | CN102005477B (ja) |
TW (1) | TWI426607B (ja) |
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CN102956483B (zh) * | 2011-08-22 | 2015-06-03 | 中国科学院微电子研究所 | 半导体器件结构及其制作方法 |
US8492206B2 (en) | 2011-08-22 | 2013-07-23 | Institute of Microelectronics, Chinese Academy of Sciences | Semiconductor device structure and method for manufacturing the same |
US8969999B2 (en) * | 2011-10-27 | 2015-03-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Fin-like field effect transistor (FinFET) based, metal-semiconductor alloy fuse device and method of manufacturing same |
CN103107139B (zh) * | 2011-11-09 | 2017-06-06 | 联华电子股份有限公司 | 具有鳍状结构的场效晶体管的结构及其制作方法 |
US8987824B2 (en) * | 2011-11-22 | 2015-03-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Multi-gate semiconductor devices |
CN103137685B (zh) * | 2011-11-24 | 2015-09-30 | 中芯国际集成电路制造(北京)有限公司 | 半导体器件及其制造方法 |
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-
2010
- 2010-04-09 US US12/757,271 patent/US8264032B2/en active Active
- 2010-08-11 KR KR1020100077470A patent/KR20110025075A/ko active Application Filing
- 2010-08-25 CN CN2010102638023A patent/CN102005477B/zh active Active
- 2010-08-27 TW TW099128794A patent/TWI426607B/zh active
- 2010-08-31 JP JP2010194220A patent/JP5373722B2/ja active Active
-
2012
- 2012-08-14 US US13/585,436 patent/US8896055B2/en active Active
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Also Published As
Publication number | Publication date |
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TW201110352A (en) | 2011-03-16 |
JP2011061196A (ja) | 2011-03-24 |
KR20110025075A (ko) | 2011-03-09 |
US8264032B2 (en) | 2012-09-11 |
US8896055B2 (en) | 2014-11-25 |
CN102005477A (zh) | 2011-04-06 |
KR20140083964A (ko) | 2014-07-04 |
US20110049613A1 (en) | 2011-03-03 |
US20120306002A1 (en) | 2012-12-06 |
CN102005477B (zh) | 2013-10-02 |
TWI426607B (zh) | 2014-02-11 |
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