CA2027528A1 - Integrated circuit - Google Patents
Integrated circuitInfo
- Publication number
- CA2027528A1 CA2027528A1 CA2027528A CA2027528A CA2027528A1 CA 2027528 A1 CA2027528 A1 CA 2027528A1 CA 2027528 A CA2027528 A CA 2027528A CA 2027528 A CA2027528 A CA 2027528A CA 2027528 A1 CA2027528 A1 CA 2027528A1
- Authority
- CA
- Canada
- Prior art keywords
- integrated circuit
- fet
- conductivity type
- depletion
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/84—Combinations of enhancement-mode IGFETs and depletion-mode IGFETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
- H10D64/661—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
- H10D64/667—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
- H10D64/667—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers
- H10D64/668—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers the layer being a silicide, e.g. TiSi2
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Logic Circuits (AREA)
Abstract
A depletion operation is realized by using a depletion type MOSFET even at the room temperature or the liquid nitrogen temperature without doping the channel portion below the gate electrode with impurities having a conductivity type, which is opposite to the conductivity type of the semiconductor substrate.
Further this FET can construct an inverter together with an enhancement type FET and these can be integrated on one substrate.
Further this FET can construct an inverter together with an enhancement type FET and these can be integrated on one substrate.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2105038A JPH0348460A (en) | 1989-04-21 | 1990-04-20 | integrated circuit |
JP105038/1990 | 1990-04-20 |
Publications (2)
Publication Number | Publication Date |
---|---|
CA2027528A1 true CA2027528A1 (en) | 1991-10-21 |
CA2027528C CA2027528C (en) | 2000-09-05 |
Family
ID=14396840
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA002027528A Expired - Fee Related CA2027528C (en) | 1990-04-20 | 1990-10-12 | Integrated circuit |
Country Status (3)
Country | Link |
---|---|
CA (1) | CA2027528C (en) |
FR (1) | FR2661277B1 (en) |
GB (1) | GB2243948B (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW444257B (en) | 1999-04-12 | 2001-07-01 | Semiconductor Energy Lab | Semiconductor device and method for fabricating the same |
JP5487034B2 (en) * | 2010-07-20 | 2014-05-07 | 株式会社東芝 | Semiconductor device and manufacturing method of semiconductor device |
KR102528205B1 (en) * | 2018-06-26 | 2023-05-03 | 에스케이하이닉스 주식회사 | Cryogenic Semiconductor Device Having a Buried Channel Array Transistor |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5145438B1 (en) * | 1971-06-25 | 1976-12-03 | ||
JPS4952980A (en) * | 1972-09-22 | 1974-05-23 | ||
JPS56165358A (en) * | 1980-05-23 | 1981-12-18 | Nec Corp | Semiconductor device |
JPS56165359A (en) * | 1980-05-23 | 1981-12-18 | Nec Corp | Semiconductor device |
JPS5925273A (en) * | 1982-08-03 | 1984-02-09 | Toshiba Corp | Semiconductor device and manufacture thereof |
US4605947A (en) * | 1983-03-07 | 1986-08-12 | Motorola Inc. | Titanium nitride MOS device gate electrode and method of producing |
JPS61137317A (en) * | 1984-12-10 | 1986-06-25 | Agency Of Ind Science & Technol | Electrode material for semiconductor device |
JPS6254960A (en) * | 1985-09-04 | 1987-03-10 | Nec Corp | Mis field effect transistor |
JPS62219966A (en) * | 1986-03-22 | 1987-09-28 | Toshiba Corp | Semiconductor device |
CA2014296C (en) * | 1989-04-21 | 2000-08-01 | Nobuo Mikoshiba | Integrated circuit |
-
1990
- 1990-10-05 GB GB9021721A patent/GB2243948B/en not_active Expired - Fee Related
- 1990-10-12 CA CA002027528A patent/CA2027528C/en not_active Expired - Fee Related
- 1990-10-24 FR FR9013196A patent/FR2661277B1/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
GB2243948B (en) | 1994-06-08 |
GB9021721D0 (en) | 1990-11-21 |
FR2661277B1 (en) | 1993-03-12 |
FR2661277A1 (en) | 1991-10-25 |
GB2243948A (en) | 1991-11-13 |
CA2027528C (en) | 2000-09-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
EEER | Examination request | ||
MKLA | Lapsed |