CA2027528A1 - Integrated circuit - Google Patents

Integrated circuit

Info

Publication number
CA2027528A1
CA2027528A1 CA2027528A CA2027528A CA2027528A1 CA 2027528 A1 CA2027528 A1 CA 2027528A1 CA 2027528 A CA2027528 A CA 2027528A CA 2027528 A CA2027528 A CA 2027528A CA 2027528 A1 CA2027528 A1 CA 2027528A1
Authority
CA
Canada
Prior art keywords
integrated circuit
fet
conductivity type
depletion
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA2027528A
Other languages
French (fr)
Other versions
CA2027528C (en
Inventor
Nobuo Mikoshiba
Kazuo Tsubouchi
Kazuya Masu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Faurecia Clarion Electronics Co Ltd
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2105038A external-priority patent/JPH0348460A/en
Application filed by Individual filed Critical Individual
Publication of CA2027528A1 publication Critical patent/CA2027528A1/en
Application granted granted Critical
Publication of CA2027528C publication Critical patent/CA2027528C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/84—Combinations of enhancement-mode IGFETs and depletion-mode IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/661—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/667—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/667—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers
    • H10D64/668—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers the layer being a silicide, e.g. TiSi2

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Logic Circuits (AREA)

Abstract

A depletion operation is realized by using a depletion type MOSFET even at the room temperature or the liquid nitrogen temperature without doping the channel portion below the gate electrode with impurities having a conductivity type, which is opposite to the conductivity type of the semiconductor substrate.
Further this FET can construct an inverter together with an enhancement type FET and these can be integrated on one substrate.
CA002027528A 1990-04-20 1990-10-12 Integrated circuit Expired - Fee Related CA2027528C (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2105038A JPH0348460A (en) 1989-04-21 1990-04-20 integrated circuit
JP105038/1990 1990-04-20

Publications (2)

Publication Number Publication Date
CA2027528A1 true CA2027528A1 (en) 1991-10-21
CA2027528C CA2027528C (en) 2000-09-05

Family

ID=14396840

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002027528A Expired - Fee Related CA2027528C (en) 1990-04-20 1990-10-12 Integrated circuit

Country Status (3)

Country Link
CA (1) CA2027528C (en)
FR (1) FR2661277B1 (en)
GB (1) GB2243948B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW444257B (en) 1999-04-12 2001-07-01 Semiconductor Energy Lab Semiconductor device and method for fabricating the same
JP5487034B2 (en) * 2010-07-20 2014-05-07 株式会社東芝 Semiconductor device and manufacturing method of semiconductor device
KR102528205B1 (en) * 2018-06-26 2023-05-03 에스케이하이닉스 주식회사 Cryogenic Semiconductor Device Having a Buried Channel Array Transistor

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5145438B1 (en) * 1971-06-25 1976-12-03
JPS4952980A (en) * 1972-09-22 1974-05-23
JPS56165358A (en) * 1980-05-23 1981-12-18 Nec Corp Semiconductor device
JPS56165359A (en) * 1980-05-23 1981-12-18 Nec Corp Semiconductor device
JPS5925273A (en) * 1982-08-03 1984-02-09 Toshiba Corp Semiconductor device and manufacture thereof
US4605947A (en) * 1983-03-07 1986-08-12 Motorola Inc. Titanium nitride MOS device gate electrode and method of producing
JPS61137317A (en) * 1984-12-10 1986-06-25 Agency Of Ind Science & Technol Electrode material for semiconductor device
JPS6254960A (en) * 1985-09-04 1987-03-10 Nec Corp Mis field effect transistor
JPS62219966A (en) * 1986-03-22 1987-09-28 Toshiba Corp Semiconductor device
CA2014296C (en) * 1989-04-21 2000-08-01 Nobuo Mikoshiba Integrated circuit

Also Published As

Publication number Publication date
GB2243948B (en) 1994-06-08
GB9021721D0 (en) 1990-11-21
FR2661277B1 (en) 1993-03-12
FR2661277A1 (en) 1991-10-25
GB2243948A (en) 1991-11-13
CA2027528C (en) 2000-09-05

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Legal Events

Date Code Title Description
EEER Examination request
MKLA Lapsed