GB9021721D0 - Integrated circuit - Google Patents

Integrated circuit

Info

Publication number
GB9021721D0
GB9021721D0 GB909021721A GB9021721A GB9021721D0 GB 9021721 D0 GB9021721 D0 GB 9021721D0 GB 909021721 A GB909021721 A GB 909021721A GB 9021721 A GB9021721 A GB 9021721A GB 9021721 D0 GB9021721 D0 GB 9021721D0
Authority
GB
United Kingdom
Prior art keywords
integrated circuit
integrated
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB909021721A
Other versions
GB2243948B (en
GB2243948A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
MIKOUSHIBA NOBUO
Original Assignee
MIKOUSHIBA NOBUO
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2105038A external-priority patent/JPH0348460A/en
Application filed by MIKOUSHIBA NOBUO filed Critical MIKOUSHIBA NOBUO
Publication of GB9021721D0 publication Critical patent/GB9021721D0/en
Publication of GB2243948A publication Critical patent/GB2243948A/en
Application granted granted Critical
Publication of GB2243948B publication Critical patent/GB2243948B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/0883—Combination of depletion and enhancement field effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4966—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4966—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2
    • H01L29/4975—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2 being a silicide layer, e.g. TiSi2

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Composite Materials (AREA)
  • Materials Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Logic Circuits (AREA)
GB9021721A 1990-04-20 1990-10-05 Integrated circuit Expired - Fee Related GB2243948B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2105038A JPH0348460A (en) 1989-04-21 1990-04-20 Integrated circuit

Publications (3)

Publication Number Publication Date
GB9021721D0 true GB9021721D0 (en) 1990-11-21
GB2243948A GB2243948A (en) 1991-11-13
GB2243948B GB2243948B (en) 1994-06-08

Family

ID=14396840

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9021721A Expired - Fee Related GB2243948B (en) 1990-04-20 1990-10-05 Integrated circuit

Country Status (3)

Country Link
CA (1) CA2027528C (en)
FR (1) FR2661277B1 (en)
GB (1) GB2243948B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110649021A (en) * 2018-06-26 2020-01-03 爱思开海力士有限公司 Very low temperature semiconductor device with buried channel array transistors

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW444257B (en) 1999-04-12 2001-07-01 Semiconductor Energy Lab Semiconductor device and method for fabricating the same
JP5487034B2 (en) * 2010-07-20 2014-05-07 株式会社東芝 Semiconductor device and manufacturing method of semiconductor device

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5145438B1 (en) * 1971-06-25 1976-12-03
JPS4952980A (en) * 1972-09-22 1974-05-23
JPS56165358A (en) * 1980-05-23 1981-12-18 Nec Corp Semiconductor device
JPS56165359A (en) * 1980-05-23 1981-12-18 Nec Corp Semiconductor device
JPS5925273A (en) * 1982-08-03 1984-02-09 Toshiba Corp Semiconductor device and manufacture thereof
US4605947A (en) * 1983-03-07 1986-08-12 Motorola Inc. Titanium nitride MOS device gate electrode and method of producing
JPS61137317A (en) * 1984-12-10 1986-06-25 Agency Of Ind Science & Technol Electrode material for semiconductor device
JPS6254960A (en) * 1985-09-04 1987-03-10 Nec Corp Mis field effect transistor
JPS62219966A (en) * 1986-03-22 1987-09-28 Toshiba Corp Semiconductor device
CA2014296C (en) * 1989-04-21 2000-08-01 Nobuo Mikoshiba Integrated circuit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110649021A (en) * 2018-06-26 2020-01-03 爱思开海力士有限公司 Very low temperature semiconductor device with buried channel array transistors
CN110649021B (en) * 2018-06-26 2023-09-15 爱思开海力士有限公司 Very low temperature semiconductor device with buried channel array transistor

Also Published As

Publication number Publication date
FR2661277B1 (en) 1993-03-12
GB2243948B (en) 1994-06-08
GB2243948A (en) 1991-11-13
CA2027528C (en) 2000-09-05
FR2661277A1 (en) 1991-10-25
CA2027528A1 (en) 1991-10-21

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Legal Events

Date Code Title Description
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20011005