CA2027528A1 - Circuit integre - Google Patents

Circuit integre

Info

Publication number
CA2027528A1
CA2027528A1 CA 2027528 CA2027528A CA2027528A1 CA 2027528 A1 CA2027528 A1 CA 2027528A1 CA 2027528 CA2027528 CA 2027528 CA 2027528 A CA2027528 A CA 2027528A CA 2027528 A1 CA2027528 A1 CA 2027528A1
Authority
CA
Canada
Prior art keywords
integrated circuit
fet
conductivity type
depletion
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA 2027528
Other languages
English (en)
Other versions
CA2027528C (fr
Inventor
Nobuo Mikoshiba
Kazuo Tsubouchi
Kazuya Masu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Faurecia Clarion Electronics Co Ltd
Original Assignee
Nobuo Mikoshiba
Kazuo Tsubouchi
Kazuya Masu
Clarion Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2105038A external-priority patent/JPH0348460A/ja
Application filed by Nobuo Mikoshiba, Kazuo Tsubouchi, Kazuya Masu, Clarion Co., Ltd. filed Critical Nobuo Mikoshiba
Publication of CA2027528A1 publication Critical patent/CA2027528A1/fr
Application granted granted Critical
Publication of CA2027528C publication Critical patent/CA2027528C/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/0883—Combination of depletion and enhancement field effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4966—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4966—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2
    • H01L29/4975—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2 being a silicide layer, e.g. TiSi2

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Composite Materials (AREA)
  • Materials Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
CA 2027528 1990-04-20 1990-10-12 Circuit integre Expired - Fee Related CA2027528C (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2105038A JPH0348460A (ja) 1989-04-21 1990-04-20 集積回路
JP105038/1990 1990-04-20

Publications (2)

Publication Number Publication Date
CA2027528A1 true CA2027528A1 (fr) 1991-10-21
CA2027528C CA2027528C (fr) 2000-09-05

Family

ID=14396840

Family Applications (1)

Application Number Title Priority Date Filing Date
CA 2027528 Expired - Fee Related CA2027528C (fr) 1990-04-20 1990-10-12 Circuit integre

Country Status (3)

Country Link
CA (1) CA2027528C (fr)
FR (1) FR2661277B1 (fr)
GB (1) GB2243948B (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW444257B (en) 1999-04-12 2001-07-01 Semiconductor Energy Lab Semiconductor device and method for fabricating the same
JP5487034B2 (ja) * 2010-07-20 2014-05-07 株式会社東芝 半導体装置および半導体装置の製造方法
KR102528205B1 (ko) * 2018-06-26 2023-05-03 에스케이하이닉스 주식회사 매립 채널 어레이 트랜지스터를 포함하는 극저온 반도체 소자

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5145438B1 (fr) * 1971-06-25 1976-12-03
JPS4952980A (fr) * 1972-09-22 1974-05-23
JPS56165359A (en) * 1980-05-23 1981-12-18 Nec Corp Semiconductor device
JPS56165358A (en) * 1980-05-23 1981-12-18 Nec Corp Semiconductor device
JPS5925273A (ja) * 1982-08-03 1984-02-09 Toshiba Corp 半導体装置及びその製造方法
US4605947A (en) * 1983-03-07 1986-08-12 Motorola Inc. Titanium nitride MOS device gate electrode and method of producing
JPS61137317A (ja) * 1984-12-10 1986-06-25 Agency Of Ind Science & Technol 半導体装置用電極材料
JPS6254960A (ja) * 1985-09-04 1987-03-10 Nec Corp Ｍｉｓ形電界効果トランジスタ
JPS62219966A (ja) * 1986-03-22 1987-09-28 Toshiba Corp 半導体装置
CA2014296C (fr) * 1989-04-21 2000-08-01 Nobuo Mikoshiba Circuit integre

Also Published As

Publication number Publication date
CA2027528C (fr) 2000-09-05
GB2243948A (en) 1991-11-13
FR2661277B1 (fr) 1993-03-12
GB2243948B (en) 1994-06-08
GB9021721D0 (en) 1990-11-21
FR2661277A1 (fr) 1991-10-25

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Legal Events

Date Code Title Description
EEER Examination request
MKLA Lapsed