CA2014296A1 - Circuit integre - Google Patents
Circuit integreInfo
- Publication number
- CA2014296A1 CA2014296A1 CA 2014296 CA2014296A CA2014296A1 CA 2014296 A1 CA2014296 A1 CA 2014296A1 CA 2014296 CA2014296 CA 2014296 CA 2014296 A CA2014296 A CA 2014296A CA 2014296 A1 CA2014296 A1 CA 2014296A1
- Authority
- CA
- Canada
- Prior art keywords
- integrated circuit
- fet
- conductivity type
- depletion
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/0883—Combination of depletion and enhancement field effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4966—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4966—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2
- H01L29/4975—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2 being a silicide layer, e.g. TiSi2
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Composite Materials (AREA)
- Materials Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Logic Circuits (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10215689 | 1989-04-21 | ||
JP102156/1989 | 1989-04-21 |
Publications (2)
Publication Number | Publication Date |
---|---|
CA2014296A1 true CA2014296A1 (fr) | 1990-10-21 |
CA2014296C CA2014296C (fr) | 2000-08-01 |
Family
ID=14319867
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA 2014296 Expired - Fee Related CA2014296C (fr) | 1989-04-21 | 1990-04-10 | Circuit integre |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPH0348460A (fr) |
CA (1) | CA2014296C (fr) |
DE (1) | DE4012681A1 (fr) |
FR (1) | FR2646289A1 (fr) |
GB (1) | GB2231720B (fr) |
NL (1) | NL9000949A (fr) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2243948B (en) * | 1990-04-20 | 1994-06-08 | Nobuo Mikoshiba | Integrated circuit |
JPH1168105A (ja) * | 1997-08-26 | 1999-03-09 | Mitsubishi Electric Corp | 半導体装置 |
US7064050B2 (en) * | 2003-11-28 | 2006-06-20 | International Business Machines Corporation | Metal carbide gate structure and method of fabrication |
US7667277B2 (en) * | 2005-01-13 | 2010-02-23 | International Business Machines Corporation | TiC as a thermally stable p-metal carbide on high k SiO2 gate stacks |
JP2010503981A (ja) | 2006-09-19 | 2010-02-04 | クナノ アーベー | ナノスケール電界効果トランジスタの構体 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2012712B2 (de) * | 1970-03-17 | 1972-11-02 | Siemens AG, 1000 Berlin und 8000 München | Integrierte bistabile kippschaltung mit feldeffekttransistoren |
JPS5214383A (en) * | 1975-07-24 | 1977-02-03 | Fujitsu Ltd | Mis-type semiconductor device |
JPS56165359A (en) * | 1980-05-23 | 1981-12-18 | Nec Corp | Semiconductor device |
JPS56165358A (en) * | 1980-05-23 | 1981-12-18 | Nec Corp | Semiconductor device |
JPS57128967A (en) * | 1981-02-02 | 1982-08-10 | Nec Corp | Integrated semiconductor device |
JPS5925273A (ja) * | 1982-08-03 | 1984-02-09 | Toshiba Corp | 半導体装置及びその製造方法 |
JPS59168666A (ja) * | 1983-03-15 | 1984-09-22 | Toshiba Corp | 半導体装置 |
DE3330851A1 (de) * | 1983-08-26 | 1985-03-14 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen von hochintegrierten komplementaeren mos-feldeffekttransistorschaltungen |
JPS60100474A (ja) * | 1983-11-04 | 1985-06-04 | Shindengen Electric Mfg Co Ltd | 半導体圧力センサ |
JPS60100473A (ja) * | 1983-11-05 | 1985-06-04 | Mitsubishi Electric Corp | 電界効果トランジスタ |
JPS61137317A (ja) * | 1984-12-10 | 1986-06-25 | Agency Of Ind Science & Technol | 半導体装置用電極材料 |
JPS62219966A (ja) * | 1986-03-22 | 1987-09-28 | Toshiba Corp | 半導体装置 |
JPS63113895A (ja) * | 1986-10-30 | 1988-05-18 | Nec Corp | Mos型半導体集積回路装置 |
-
1990
- 1990-04-10 CA CA 2014296 patent/CA2014296C/fr not_active Expired - Fee Related
- 1990-04-17 GB GB9008525A patent/GB2231720B/en not_active Expired - Fee Related
- 1990-04-20 DE DE19904012681 patent/DE4012681A1/de not_active Withdrawn
- 1990-04-20 FR FR9005083A patent/FR2646289A1/fr active Granted
- 1990-04-20 JP JP2105038A patent/JPH0348460A/ja active Pending
- 1990-04-20 NL NL9000949A patent/NL9000949A/nl not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
FR2646289A1 (fr) | 1990-10-26 |
GB2231720A (en) | 1990-11-21 |
GB9008525D0 (en) | 1990-06-13 |
FR2646289B1 (fr) | 1994-08-19 |
DE4012681A1 (de) | 1990-10-25 |
JPH0348460A (ja) | 1991-03-01 |
GB2231720B (en) | 1993-08-11 |
NL9000949A (nl) | 1990-11-16 |
CA2014296C (fr) | 2000-08-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
EEER | Examination request | ||
MKLA | Lapsed |