JPS57128967A - Integrated semiconductor device - Google Patents

Integrated semiconductor device

Info

Publication number
JPS57128967A
JPS57128967A JP56014141A JP1414181A JPS57128967A JP S57128967 A JPS57128967 A JP S57128967A JP 56014141 A JP56014141 A JP 56014141A JP 1414181 A JP1414181 A JP 1414181A JP S57128967 A JPS57128967 A JP S57128967A
Authority
JP
Japan
Prior art keywords
well
driver
mist
inverter
area
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56014141A
Other languages
Japanese (ja)
Other versions
JPH0147902B2 (en
Inventor
Tadahide Takada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP56014141A priority Critical patent/JPS57128967A/en
Publication of JPS57128967A publication Critical patent/JPS57128967A/en
Publication of JPH0147902B2 publication Critical patent/JPH0147902B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To reduce the occupying area of an inverter, and to integrate the device to a high degree by forming a MIST for a driver into a well surrounded by a field insulating film for thick separation and shaping a MIST for load by utilizing the tapered section of the field film. CONSTITUTION:The P type well 30 surrounded by the field insulating film 2 for thick separation is formed to an N type semiconductor substrate 1, and N<+> type source 4 and drain 5 are shaped into the well. A gate insulating film 6 and a gate electrode 7 consisting of poly Si, etc. are molded to the surface of the substrate between the N<+> type regions 4, 5. The inverter is consituted in such a manner that MIS structure in the well forms the driver T1 and MIS structure in the well forms the driver T1 and MIS structure using the tapered region of the field film as a channel 9 forms the load T2. Accordingly, the occupying area is determined only by the area of the MIST for the driver, the area of the inverter is reduced, and the device can be integrated to a high degree.
JP56014141A 1981-02-02 1981-02-02 Integrated semiconductor device Granted JPS57128967A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56014141A JPS57128967A (en) 1981-02-02 1981-02-02 Integrated semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56014141A JPS57128967A (en) 1981-02-02 1981-02-02 Integrated semiconductor device

Publications (2)

Publication Number Publication Date
JPS57128967A true JPS57128967A (en) 1982-08-10
JPH0147902B2 JPH0147902B2 (en) 1989-10-17

Family

ID=11852865

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56014141A Granted JPS57128967A (en) 1981-02-02 1981-02-02 Integrated semiconductor device

Country Status (1)

Country Link
JP (1) JPS57128967A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0348460A (en) * 1989-04-21 1991-03-01 Nobuo Mikoshiba Integrated circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0348460A (en) * 1989-04-21 1991-03-01 Nobuo Mikoshiba Integrated circuit

Also Published As

Publication number Publication date
JPH0147902B2 (en) 1989-10-17

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