JPS57128967A - Integrated semiconductor device - Google Patents
Integrated semiconductor deviceInfo
- Publication number
- JPS57128967A JPS57128967A JP56014141A JP1414181A JPS57128967A JP S57128967 A JPS57128967 A JP S57128967A JP 56014141 A JP56014141 A JP 56014141A JP 1414181 A JP1414181 A JP 1414181A JP S57128967 A JPS57128967 A JP S57128967A
- Authority
- JP
- Japan
- Prior art keywords
- well
- driver
- mist
- inverter
- area
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000003595 mist Substances 0.000 abstract 3
- 238000000926 separation method Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 238000007493 shaping process Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To reduce the occupying area of an inverter, and to integrate the device to a high degree by forming a MIST for a driver into a well surrounded by a field insulating film for thick separation and shaping a MIST for load by utilizing the tapered section of the field film. CONSTITUTION:The P type well 30 surrounded by the field insulating film 2 for thick separation is formed to an N type semiconductor substrate 1, and N<+> type source 4 and drain 5 are shaped into the well. A gate insulating film 6 and a gate electrode 7 consisting of poly Si, etc. are molded to the surface of the substrate between the N<+> type regions 4, 5. The inverter is consituted in such a manner that MIS structure in the well forms the driver T1 and MIS structure in the well forms the driver T1 and MIS structure using the tapered region of the field film as a channel 9 forms the load T2. Accordingly, the occupying area is determined only by the area of the MIST for the driver, the area of the inverter is reduced, and the device can be integrated to a high degree.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56014141A JPS57128967A (en) | 1981-02-02 | 1981-02-02 | Integrated semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56014141A JPS57128967A (en) | 1981-02-02 | 1981-02-02 | Integrated semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57128967A true JPS57128967A (en) | 1982-08-10 |
JPH0147902B2 JPH0147902B2 (en) | 1989-10-17 |
Family
ID=11852865
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56014141A Granted JPS57128967A (en) | 1981-02-02 | 1981-02-02 | Integrated semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57128967A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0348460A (en) * | 1989-04-21 | 1991-03-01 | Nobuo Mikoshiba | Integrated circuit |
-
1981
- 1981-02-02 JP JP56014141A patent/JPS57128967A/en active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0348460A (en) * | 1989-04-21 | 1991-03-01 | Nobuo Mikoshiba | Integrated circuit |
Also Published As
Publication number | Publication date |
---|---|
JPH0147902B2 (en) | 1989-10-17 |
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