KR900010945A - 화합물반도체 디바이스의 제조방법과 화합물 반도체 디바이스 - Google Patents

화합물반도체 디바이스의 제조방법과 화합물 반도체 디바이스 Download PDF

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KR900010945A
KR900010945A KR1019890019555A KR890019555A KR900010945A KR 900010945 A KR900010945 A KR 900010945A KR 1019890019555 A KR1019890019555 A KR 1019890019555A KR 890019555 A KR890019555 A KR 890019555A KR 900010945 A KR900010945 A KR 900010945A
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South Korea
Prior art keywords
semiconductor device
compound semiconductor
etching
producing
crystal layer
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KR1019890019555A
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KR940005285B1 (ko
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가즈오 고구레
마사노리 이시이
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원본미기재
후루까와 덴끼 고오교오 가부시끼가이샤
후지쓰 가부시끼가이샤
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Publication of KR900010945A publication Critical patent/KR900010945A/ko
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Publication of KR940005285B1 publication Critical patent/KR940005285B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30612—Etching of AIIIBV compounds
    • H01L21/30617—Anisotropic liquid etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30612—Etching of AIIIBV compounds

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Weting (AREA)

Abstract

내용 없음

Description

화합물반도체 디바이스의 제조방법과 화합물 반도체 디바이스
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명방법에 있어서의 에칭하기전의 혼전층을 예시한 단면도, 제2도는 본 발명방법에 있어서의 에칭수단의 일예를 그 에칭설비와 함께 개략 표시한 단면도, 제3도는 본 발명의 에칭수단에 의하여 에칭한 후의 혼정층을 예시한 단면도.

Claims (8)

  1. 기판상에 Ⅲ-V족 화합물을 포함하는 혼정층이 형성된 화합물반도체 디바이스의 제조방법에 있어서, 상기 혼정층의 일부를 에칭액에 의하여 에칭할 때 적어도 그 에칭부에 광이 닿지 아니하는 상태를 유지하면서, 당해 에칭부를 에칭하는 것을 특징으로 하는 화합물반도체 디바이스 제조방법.
  2. 제1항에 있어서, 에칭전에 있어서도 혼정층의 에칭부에 광이 닿지 아니한 상태를 유지하는 화합물반도체 디바이스의 제조방법.
  3. 제1항 또는 제2항에 있어서, 에칭액이 불산과 과산화수소와를 포함한 수용액으로 된 화합물반도체 디바이스의 제조방법.
  4. 제1항 또는 제2항에 있어서, 에칭액이 취화수소와 과산화수소와를 포함할 수용액으로 된 화합물반도체 디바이스의 제조방법.
  5. 제1항 또는 제2항에 있어서, 혼정층이 AlCaAs으로 된 화합물 반도체 디바이스의 제조방법.
  6. 제1항 또는 제2항에 있어서, 혼정층이 S도푸트로된 화합물 반도체 디바이스의 제조방법.
  7. 제1항 또는 제2항에 있어서, 혼정층이 Inp으로 된 화합물 반도체 디바이스의 제조방법.
  8. 청구범위 제1항의 기재된 방법에 의하여 제조된 화합물 반도체 디바이스.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019890019555A 1988-12-26 1989-12-26 화합물반도체 디바이스의 제조방법과 화합물반도체 디바이스 KR940005285B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP?63-328696 1988-12-26
JP88-328696 1988-12-26
JP32869688 1988-12-26

Publications (2)

Publication Number Publication Date
KR900010945A true KR900010945A (ko) 1990-07-11
KR940005285B1 KR940005285B1 (ko) 1994-06-15

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KR1019890019555A KR940005285B1 (ko) 1988-12-26 1989-12-26 화합물반도체 디바이스의 제조방법과 화합물반도체 디바이스

Country Status (4)

Country Link
US (1) US5250471A (ko)
EP (1) EP0377322A1 (ko)
KR (1) KR940005285B1 (ko)
CA (1) CA2006597A1 (ko)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19506323A1 (de) 1995-02-23 1996-08-29 Siemens Ag Halbleitervorrichtung mit aufgerauhter Halbleiteroberfläche
US6248704B1 (en) 1999-05-03 2001-06-19 Ekc Technology, Inc. Compositions for cleaning organic and plasma etched residues for semiconductors devices
US6228673B1 (en) * 1999-05-13 2001-05-08 Hughes Electronics Corporation Method of fabricating a surface coupled InGaAs photodetector
US6624086B1 (en) * 1999-09-15 2003-09-23 Texas Instruments Incorporated Effective solution and process to wet-etch metal-alloy films in semiconductor processing
US6338976B1 (en) * 2000-01-21 2002-01-15 Taiwan Semiconductor Manufacturing Company, Ltd. Method for forming optoelectronic microelectronic fabrication with attenuated bond pad corrosion
KR100379824B1 (ko) * 2000-12-20 2003-04-11 엘지.필립스 엘시디 주식회사 식각용액 및 식각용액으로 패턴된 구리배선을 가지는전자기기용 어레이기판
KR101070204B1 (ko) * 2006-02-01 2011-10-06 자이단호진 고쿠사이카가쿠 신고우자이단 반도체 장치의 제조 방법 및 반도체 표면의 마이크로러프니스 저감 방법
WO2018216203A1 (ja) * 2017-05-26 2018-11-29 住友電気工業株式会社 ＧａＡｓ基板およびその製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3265599A (en) * 1963-06-25 1966-08-09 Litton Systems Inc Formation of grain boundary photoorienter by electrolytic etching
US3706645A (en) * 1971-09-30 1972-12-19 Us Army Process including photolytic enhancement for anodic dissolution of a gallium arsenide wafer
JPS5321275B2 (ko) * 1972-03-13 1978-07-01
IL58441A (en) * 1979-10-11 1982-11-30 Yeda Res & Dev Surface treatment of semiconductors for photovoltaic and photoelectro chemical applications
US4482442A (en) * 1981-07-09 1984-11-13 At&T Bell Laboratories Photoelectrochemical etching of n-type gallium arsenide
US4414066A (en) * 1982-09-10 1983-11-08 Bell Telephone Laboratories, Incorporated Electrochemical photoetching of compound semiconductors
US4415414A (en) * 1982-09-10 1983-11-15 Bell Telephone Laboratories, Incorporated Etching of optical surfaces
US4576691A (en) * 1984-07-31 1986-03-18 At&T Bell Laboratories Etching optical surfaces on GaAs

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CA2006597A1 (en) 1990-06-26
US5250471A (en) 1993-10-05
EP0377322A1 (en) 1990-07-11
KR940005285B1 (ko) 1994-06-15

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