KR830003804A - 실리콘 전지의 pn 접합시 그 위에 단일코팅을 형성하는 방법 - Google Patents

실리콘 전지의 pn 접합시 그 위에 단일코팅을 형성하는 방법 Download PDF

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Publication number
KR830003804A
KR830003804A KR1019800003221A KR800003221A KR830003804A KR 830003804 A KR830003804 A KR 830003804A KR 1019800003221 A KR1019800003221 A KR 1019800003221A KR 800003221 A KR800003221 A KR 800003221A KR 830003804 A KR830003804 A KR 830003804A
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KR
South Korea
Prior art keywords
junction
forming
single coating
silicon cell
silicon
Prior art date
Application number
KR1019800003221A
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English (en)
Other versions
KR830002294B1 (ko
Inventor
이. 욜다스 뷰렌트
에이. 욜다스 루보미라
Original Assignee
알. 브이. 가버트, 쥬니어
웨스팅하우스 일렉트릭 코오포레이숀
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 알. 브이. 가버트, 쥬니어, 웨스팅하우스 일렉트릭 코오포레이숀 filed Critical 알. 브이. 가버트, 쥬니어
Publication of KR830003804A publication Critical patent/KR830003804A/ko
Application granted granted Critical
Publication of KR830002294B1 publication Critical patent/KR830002294B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S252/00—Compositions
    • Y10S252/95—Doping agent source material

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Sustainable Development (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)
  • Paints Or Removers (AREA)
  • Surface Treatment Of Optical Elements (AREA)

Abstract

내용 없음

Description

실리콘 전지의 PN 접합시 그 위에 단일코팅을 형성하는 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 태양전지의 양호한 실시예의 절단면을 간략하게 도시한 단면도.

Claims (1)

  1. 실리콘면에 코팅을 증착시키는 과정중에 반 반사되는 실리콘면에 반 반사코팅을 증착시키는 방법에 있어서, 도팬트 특성을 가지는 적어도 40%의 티타니아로 구성된 코팅과, 상기 실리콘에서 PN접합을 형성하는 도팬트의 확산온도를 넘어서 피복된 실리콘을 가열하는 단계로 특징지워지는 실리콘면에 반 반사코팅을 증착시키는 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019800003221A 1979-08-14 1980-08-14 실리콘 전지의 pn 접합시 그 위에 단일 코팅을 형성하는 방법 KR830002294B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US06/066,368 US4251285A (en) 1979-08-14 1979-08-14 Diffusion of dopant from optical coating and single step formation of PN junction in silicon solar cell and coating thereon
US066.368 1979-08-14
US066,368 1987-06-25

Publications (2)

Publication Number Publication Date
KR830003804A true KR830003804A (ko) 1983-06-22
KR830002294B1 KR830002294B1 (ko) 1983-10-21

Family

ID=22069056

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019800003221A KR830002294B1 (ko) 1979-08-14 1980-08-14 실리콘 전지의 pn 접합시 그 위에 단일 코팅을 형성하는 방법

Country Status (14)

Country Link
US (1) US4251285A (ko)
EP (1) EP0024057B1 (ko)
JP (1) JPS5660075A (ko)
KR (1) KR830002294B1 (ko)
AU (1) AU537352B2 (ko)
BR (1) BR8005034A (ko)
DE (1) DE3067142D1 (ko)
ES (1) ES8106817A1 (ko)
HK (1) HK29385A (ko)
IL (1) IL60807A (ko)
IN (1) IN152740B (ko)
MX (1) MX155893A (ko)
MY (1) MY8500900A (ko)
ZA (1) ZA804634B (ko)

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US4744973A (en) * 1985-11-29 1988-05-17 Westinghouse Electric Corp. Inorganic polymeric cationic ion exchange matrix
US4759949A (en) * 1987-07-23 1988-07-26 Westinghouse Electric Corp. Method of insulating ferromagnetic amorphous metal continuous strip
US4808464A (en) * 1987-07-23 1989-02-28 Westinghouse Electric Corp. Insulating ferromagnetic amorphous metal strips
JPH0690014A (ja) * 1992-07-22 1994-03-29 Mitsubishi Electric Corp 薄型太陽電池及びその製造方法，エッチング方法及び自動エッチング装置，並びに半導体装置の製造方法
US5270248A (en) * 1992-08-07 1993-12-14 Mobil Solar Energy Corporation Method for forming diffusion junctions in solar cell substrates
US5478776A (en) * 1993-12-27 1995-12-26 At&T Corp. Process for fabricating integrated circuit containing shallow junction using dopant source containing organic polymer or ammonium silicate
JP3032422B2 (ja) * 1994-04-28 2000-04-17 シャープ株式会社 太陽電池セルとその製造方法
US5792280A (en) * 1994-05-09 1998-08-11 Sandia Corporation Method for fabricating silicon cells
AUPM996094A0 (en) * 1994-12-08 1995-01-05 Pacific Solar Pty Limited Multilayer solar cells with bypass diode protection
US6278053B1 (en) * 1997-03-25 2001-08-21 Evergreen Solar, Inc. Decals and methods for providing an antireflective coating and metallization on a solar cell
JP2002511637A (ja) * 1998-04-13 2002-04-16 トラスティーズ・オヴ・プリンストン・ユニヴァーシティ フィルム組成に不純物を添加又はフィルム組成から不純物を除去することによってポリマーの光電子特性を変更する方法
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Also Published As

Publication number Publication date
BR8005034A (pt) 1981-02-24
AU6100180A (en) 1981-02-19
US4251285A (en) 1981-02-17
ZA804634B (en) 1981-07-29
IN152740B (ko) 1984-03-24
KR830002294B1 (ko) 1983-10-21
IL60807A0 (en) 1980-10-26
ES494214A0 (es) 1981-08-01
IL60807A (en) 1983-10-31
DE3067142D1 (en) 1984-04-26
EP0024057B1 (en) 1984-03-21
AU537352B2 (en) 1984-06-21
ES8106817A1 (es) 1981-08-01
JPS5660075A (en) 1981-05-23
EP0024057A1 (en) 1981-02-18
MY8500900A (en) 1985-12-31
HK29385A (en) 1985-04-19
MX155893A (es) 1988-05-18

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