HK29385A - Single step formation of pn junction in silicon cell and coating thereon - Google Patents

Single step formation of pn junction in silicon cell and coating thereon

Info

Publication number
HK29385A
HK29385A HK293/85A HK29385A HK29385A HK 29385 A HK29385 A HK 29385A HK 293/85 A HK293/85 A HK 293/85A HK 29385 A HK29385 A HK 29385A HK 29385 A HK29385 A HK 29385A
Authority
HK
Hong Kong
Prior art keywords
junction
coating
single step
silicon cell
step formation
Prior art date
Application number
HK293/85A
Other languages
English (en)
Inventor
Bulent E Yoldas
Lubomyra A Yoldas
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of HK29385A publication Critical patent/HK29385A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0216Coatings
    • H01L31/02161Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251Diffusion into or out of group IV semiconductors
    • H01L21/2254Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S252/00Compositions
    • Y10S252/95Doping agent source material

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Sustainable Development (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)
  • Surface Treatment Of Optical Elements (AREA)
  • Paints Or Removers (AREA)
HK293/85A 1979-08-14 1985-04-11 Single step formation of pn junction in silicon cell and coating thereon HK29385A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/066,368 US4251285A (en) 1979-08-14 1979-08-14 Diffusion of dopant from optical coating and single step formation of PN junction in silicon solar cell and coating thereon

Publications (1)

Publication Number Publication Date
HK29385A true HK29385A (en) 1985-04-19

Family

ID=22069056

Family Applications (1)

Application Number Title Priority Date Filing Date
HK293/85A HK29385A (en) 1979-08-14 1985-04-11 Single step formation of pn junction in silicon cell and coating thereon

Country Status (14)

Country Link
US (1) US4251285A (xx)
EP (1) EP0024057B1 (xx)
JP (1) JPS5660075A (xx)
KR (1) KR830002294B1 (xx)
AU (1) AU537352B2 (xx)
BR (1) BR8005034A (xx)
DE (1) DE3067142D1 (xx)
ES (1) ES8106817A1 (xx)
HK (1) HK29385A (xx)
IL (1) IL60807A (xx)
IN (1) IN152740B (xx)
MX (1) MX155893A (xx)
MY (1) MY8500900A (xx)
ZA (1) ZA804634B (xx)

Families Citing this family (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4619719A (en) * 1982-01-28 1986-10-28 Owens-Illinois, Inc. Process for forming a doped oxide film and composite article
US4571366A (en) * 1982-02-11 1986-02-18 Owens-Illinois, Inc. Process for forming a doped oxide film and doped semiconductor
US4605450A (en) * 1982-02-11 1986-08-12 Owens-Illinois, Inc. Process for forming a doped oxide film and doped semiconductor
DE3340874A1 (de) * 1983-11-11 1985-05-23 Telefunken electronic GmbH, 7100 Heilbronn Verfahren zum herstellen einer solarzelle
JPS60140880A (ja) * 1983-12-28 1985-07-25 Hitachi Ltd 太陽電池の製造方法
US4744973A (en) * 1985-11-29 1988-05-17 Westinghouse Electric Corp. Inorganic polymeric cationic ion exchange matrix
US4808464A (en) * 1987-07-23 1989-02-28 Westinghouse Electric Corp. Insulating ferromagnetic amorphous metal strips
US4759949A (en) * 1987-07-23 1988-07-26 Westinghouse Electric Corp. Method of insulating ferromagnetic amorphous metal continuous strip
JPH0690014A (ja) * 1992-07-22 1994-03-29 Mitsubishi Electric Corp 薄型太陽電池及びその製造方法,エッチング方法及び自動エッチング装置,並びに半導体装置の製造方法
US5270248A (en) * 1992-08-07 1993-12-14 Mobil Solar Energy Corporation Method for forming diffusion junctions in solar cell substrates
US5478776A (en) * 1993-12-27 1995-12-26 At&T Corp. Process for fabricating integrated circuit containing shallow junction using dopant source containing organic polymer or ammonium silicate
JP3032422B2 (ja) * 1994-04-28 2000-04-17 シャープ株式会社 太陽電池セルとその製造方法
US5792280A (en) * 1994-05-09 1998-08-11 Sandia Corporation Method for fabricating silicon cells
AUPM996094A0 (en) * 1994-12-08 1995-01-05 Pacific Solar Pty Limited Multilayer solar cells with bypass diode protection
US6278053B1 (en) * 1997-03-25 2001-08-21 Evergreen Solar, Inc. Decals and methods for providing an antireflective coating and metallization on a solar cell
WO1999053529A2 (en) * 1998-04-13 1999-10-21 Trustees Of Princeton University Modification of polymer optoelectronic properties after film formation impurity addition or removal
US7090890B1 (en) 1998-04-13 2006-08-15 The Trustees Of Princeton University Modification of polymer optoelectronic properties after film formation by impurity addition or removal
AUPP437598A0 (en) * 1998-06-29 1998-07-23 Unisearch Limited A self aligning method for forming a selective emitter and metallization in a solar cell
JP4812147B2 (ja) * 1999-09-07 2011-11-09 株式会社日立製作所 太陽電池の製造方法
US7402448B2 (en) * 2003-01-31 2008-07-22 Bp Corporation North America Inc. Photovoltaic cell and production thereof
US20080057686A1 (en) * 2006-08-31 2008-03-06 Melgaard Hans L Continuous dopant addition
US8513514B2 (en) 2008-10-24 2013-08-20 Suncore Photovoltaics, Inc. Solar tracking for terrestrial solar arrays with variable start and stop positions
US8507837B2 (en) 2008-10-24 2013-08-13 Suncore Photovoltaics, Inc. Techniques for monitoring solar array performance and applications thereof
US9012766B2 (en) 2009-11-12 2015-04-21 Silevo, Inc. Aluminum grid as backside conductor on epitaxial silicon thin film solar cells
EP2521186A1 (en) * 2009-12-28 2012-11-07 Sharp Kabushiki Kaisha Method for manufacturing a solar cell
US20120318340A1 (en) * 2010-05-04 2012-12-20 Silevo, Inc. Back junction solar cell with tunnel oxide
US9214576B2 (en) 2010-06-09 2015-12-15 Solarcity Corporation Transparent conducting oxide for photovoltaic devices
US9773928B2 (en) 2010-09-10 2017-09-26 Tesla, Inc. Solar cell with electroplated metal grid
US9800053B2 (en) 2010-10-08 2017-10-24 Tesla, Inc. Solar panels with integrated cell-level MPPT devices
JP5723143B2 (ja) * 2010-12-06 2015-05-27 シャープ株式会社 裏面電極型太陽電池の製造方法、および裏面電極型太陽電池
US9054256B2 (en) 2011-06-02 2015-06-09 Solarcity Corporation Tunneling-junction solar cell with copper grid for concentrated photovoltaic application
JP2013026524A (ja) * 2011-07-22 2013-02-04 Hitachi Chem Co Ltd n型拡散層形成組成物、n型拡散層の製造方法、太陽電池素子の製造方法、及び太陽電池
WO2013043809A2 (en) * 2011-09-21 2013-03-28 Arizona Board Of Regents, A Body Corporate Of The State Of Arizona Heterostructure si solar cells using wide-bandgap semiconductors
KR101381844B1 (ko) * 2012-04-24 2014-04-24 에스티엑스 솔라주식회사 양면형 태양전지 제조방법
AU2013326971B2 (en) 2012-10-04 2016-06-30 Tesla, Inc. Photovoltaic devices with electroplated metal grids
US9865754B2 (en) 2012-10-10 2018-01-09 Tesla, Inc. Hole collectors for silicon photovoltaic cells
US9281436B2 (en) 2012-12-28 2016-03-08 Solarcity Corporation Radio-frequency sputtering system with rotary target for fabricating solar cells
US10074755B2 (en) 2013-01-11 2018-09-11 Tesla, Inc. High efficiency solar panel
US9412884B2 (en) 2013-01-11 2016-08-09 Solarcity Corporation Module fabrication of solar cells with low resistivity electrodes
US9219174B2 (en) 2013-01-11 2015-12-22 Solarcity Corporation Module fabrication of solar cells with low resistivity electrodes
US9624595B2 (en) 2013-05-24 2017-04-18 Solarcity Corporation Electroplating apparatus with improved throughput
US10309012B2 (en) 2014-07-03 2019-06-04 Tesla, Inc. Wafer carrier for reducing contamination from carbon particles and outgassing
US9899546B2 (en) 2014-12-05 2018-02-20 Tesla, Inc. Photovoltaic cells with electrodes adapted to house conductive paste
US9947822B2 (en) 2015-02-02 2018-04-17 Tesla, Inc. Bifacial photovoltaic module using heterojunction solar cells
US9761744B2 (en) 2015-10-22 2017-09-12 Tesla, Inc. System and method for manufacturing photovoltaic structures with a metal seed layer
US9842956B2 (en) 2015-12-21 2017-12-12 Tesla, Inc. System and method for mass-production of high-efficiency photovoltaic structures
US9496429B1 (en) 2015-12-30 2016-11-15 Solarcity Corporation System and method for tin plating metal electrodes
US10115838B2 (en) 2016-04-19 2018-10-30 Tesla, Inc. Photovoltaic structures with interlocking busbars
US10672919B2 (en) 2017-09-19 2020-06-02 Tesla, Inc. Moisture-resistant solar cells for solar roof tiles
US11190128B2 (en) 2018-02-27 2021-11-30 Tesla, Inc. Parallel-connected solar roof tile modules

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3437527A (en) * 1966-10-26 1969-04-08 Webb James E Method for producing a solar cell having an integral protective covering
US3460956A (en) * 1968-07-19 1969-08-12 Joseph Dahle Titanate product and method of making the same
US3993506A (en) * 1975-09-25 1976-11-23 Varian Associates Photovoltaic cell employing lattice matched quaternary passivating layer
US4101351A (en) * 1976-11-15 1978-07-18 Texas Instruments Incorporated Process for fabricating inexpensive high performance solar cells using doped oxide junction and insitu anti-reflection coatings
JPS5482992A (en) * 1977-12-14 1979-07-02 Sharp Corp Solar battery and its manufacture
IN152814B (xx) * 1978-08-08 1984-04-14 Westinghouse Electric Corp

Also Published As

Publication number Publication date
MY8500900A (en) 1985-12-31
AU6100180A (en) 1981-02-19
DE3067142D1 (en) 1984-04-26
KR830002294B1 (ko) 1983-10-21
ES494214A0 (es) 1981-08-01
BR8005034A (pt) 1981-02-24
JPS5660075A (en) 1981-05-23
IN152740B (xx) 1984-03-24
AU537352B2 (en) 1984-06-21
ES8106817A1 (es) 1981-08-01
ZA804634B (en) 1981-07-29
IL60807A (en) 1983-10-31
MX155893A (es) 1988-05-18
US4251285A (en) 1981-02-17
EP0024057A1 (en) 1981-02-18
EP0024057B1 (en) 1984-03-21
KR830003804A (ko) 1983-06-22
IL60807A0 (en) 1980-10-26

Similar Documents

Publication Publication Date Title
DE3067142D1 (en) Single step formation of pn junction in silicon cell and coating thereon
GB2050053B (en) Photovoltaic semiconductor devices and methods of making same
JPS52100989A (en) Semiconductor pn junction solar battery and method of producing same
JPS5693377A (en) Solar battery and solar battery group formed of same
JPS554994A (en) Solar battery and method of manufacturing same
JPS5662378A (en) Semiconductor layer solar battery and method of manufacturing same
GB2076433B (en) P-doped silicon films and devices made therefrom
GB2051876B (en) Solar cell having contacts and antireflective coating and method of forming same
JPS52108531A (en) Solar energy collector and method of forming surface film
JPS5370668A (en) Method of forming nntype region in silicon substrate
JPS5649579A (en) Solar battery and method of manufacturing same
JPS5283084A (en) Pn junction solid state element and method of producing same
GB2081010B (en) Semiconductor device with a pn junction and its method of manufacture
DE2964588D1 (en) Method of manufacturing semiconductor devices with insulated areas of polycrystalline silicon and semiconductor devices thus produced
JPS5416193A (en) Semiconductor solar battery and method of producing same
JPS531483A (en) Pn junction solar battery and method of producing same
JPS568818A (en) Method of forming pn junction
GB2066565B (en) Structured solar cell and method of making same
DE3176919D1 (en) Pin photovoltaic cell having a hetero junction of amorphous siliconcompound and amorphous silicon
DE2963405D1 (en) Method of diffusing boron in silicon bodies
IL50723A (en) Manufacture of semiconductor ribbon and solar cells
JPS5624982A (en) Method of manufacturing silicon containing layer and solar battery associated with layer produced thereby
JPS5696856A (en) Semiconductor memory cell and method of manufacturing same
JPS5636174A (en) Semiconductor photodetector device and method of manufacturing same
JPS5623742A (en) Method of manufactufacturing pn junction