ES494214A0 - Un metodo para aplicar un revestimiento antirreflejante so- bre silicio - Google Patents
Un metodo para aplicar un revestimiento antirreflejante so- bre silicioInfo
- Publication number
- ES494214A0 ES494214A0 ES494214A ES494214A ES494214A0 ES 494214 A0 ES494214 A0 ES 494214A0 ES 494214 A ES494214 A ES 494214A ES 494214 A ES494214 A ES 494214A ES 494214 A0 ES494214 A0 ES 494214A0
- Authority
- ES
- Spain
- Prior art keywords
- silicon
- applying
- reflection coating
- reflection
- coating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000011248 coating agent Substances 0.000 title 1
- 238000000576 coating method Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S252/00—Compositions
- Y10S252/95—Doping agent source material
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
- Surface Treatment Of Optical Elements (AREA)
- Paints Or Removers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/066,368 US4251285A (en) | 1979-08-14 | 1979-08-14 | Diffusion of dopant from optical coating and single step formation of PN junction in silicon solar cell and coating thereon |
Publications (2)
Publication Number | Publication Date |
---|---|
ES8106817A1 ES8106817A1 (es) | 1981-08-01 |
ES494214A0 true ES494214A0 (es) | 1981-08-01 |
Family
ID=22069056
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES494214A Granted ES494214A0 (es) | 1979-08-14 | 1980-08-13 | Un metodo para aplicar un revestimiento antirreflejante so- bre silicio |
Country Status (14)
Country | Link |
---|---|
US (1) | US4251285A (es) |
EP (1) | EP0024057B1 (es) |
JP (1) | JPS5660075A (es) |
KR (1) | KR830002294B1 (es) |
AU (1) | AU537352B2 (es) |
BR (1) | BR8005034A (es) |
DE (1) | DE3067142D1 (es) |
ES (1) | ES494214A0 (es) |
HK (1) | HK29385A (es) |
IL (1) | IL60807A (es) |
IN (1) | IN152740B (es) |
MX (1) | MX155893A (es) |
MY (1) | MY8500900A (es) |
ZA (1) | ZA804634B (es) |
Families Citing this family (50)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4619719A (en) * | 1982-01-28 | 1986-10-28 | Owens-Illinois, Inc. | Process for forming a doped oxide film and composite article |
US4571366A (en) * | 1982-02-11 | 1986-02-18 | Owens-Illinois, Inc. | Process for forming a doped oxide film and doped semiconductor |
US4605450A (en) * | 1982-02-11 | 1986-08-12 | Owens-Illinois, Inc. | Process for forming a doped oxide film and doped semiconductor |
DE3340874A1 (de) * | 1983-11-11 | 1985-05-23 | Telefunken electronic GmbH, 7100 Heilbronn | Verfahren zum herstellen einer solarzelle |
JPS60140880A (ja) * | 1983-12-28 | 1985-07-25 | Hitachi Ltd | 太陽電池の製造方法 |
US4744973A (en) * | 1985-11-29 | 1988-05-17 | Westinghouse Electric Corp. | Inorganic polymeric cationic ion exchange matrix |
US4759949A (en) * | 1987-07-23 | 1988-07-26 | Westinghouse Electric Corp. | Method of insulating ferromagnetic amorphous metal continuous strip |
US4808464A (en) * | 1987-07-23 | 1989-02-28 | Westinghouse Electric Corp. | Insulating ferromagnetic amorphous metal strips |
JPH0690014A (ja) * | 1992-07-22 | 1994-03-29 | Mitsubishi Electric Corp | 薄型太陽電池及びその製造方法,エッチング方法及び自動エッチング装置,並びに半導体装置の製造方法 |
US5270248A (en) * | 1992-08-07 | 1993-12-14 | Mobil Solar Energy Corporation | Method for forming diffusion junctions in solar cell substrates |
US5478776A (en) * | 1993-12-27 | 1995-12-26 | At&T Corp. | Process for fabricating integrated circuit containing shallow junction using dopant source containing organic polymer or ammonium silicate |
JP3032422B2 (ja) * | 1994-04-28 | 2000-04-17 | シャープ株式会社 | 太陽電池セルとその製造方法 |
US5792280A (en) * | 1994-05-09 | 1998-08-11 | Sandia Corporation | Method for fabricating silicon cells |
AUPM996094A0 (en) * | 1994-12-08 | 1995-01-05 | Pacific Solar Pty Limited | Multilayer solar cells with bypass diode protection |
US6278053B1 (en) * | 1997-03-25 | 2001-08-21 | Evergreen Solar, Inc. | Decals and methods for providing an antireflective coating and metallization on a solar cell |
EP1101244A4 (en) * | 1998-04-13 | 2004-03-31 | Univ Princeton | MODIFICATION OF THE OPTOELECTRONIC PROPERTIES OF A POLYMER AFTER FORMATION OF A THIN FILM BY ADDITION OR REMOVAL OF IMPURITIES |
US7090890B1 (en) | 1998-04-13 | 2006-08-15 | The Trustees Of Princeton University | Modification of polymer optoelectronic properties after film formation by impurity addition or removal |
AUPP437598A0 (en) * | 1998-06-29 | 1998-07-23 | Unisearch Limited | A self aligning method for forming a selective emitter and metallization in a solar cell |
JP4812147B2 (ja) * | 1999-09-07 | 2011-11-09 | 株式会社日立製作所 | 太陽電池の製造方法 |
US7402448B2 (en) * | 2003-01-31 | 2008-07-22 | Bp Corporation North America Inc. | Photovoltaic cell and production thereof |
EP2057301A2 (en) * | 2006-08-31 | 2009-05-13 | Despatch Industries Limited Partnership | Continuous dopant addition |
US8513514B2 (en) | 2008-10-24 | 2013-08-20 | Suncore Photovoltaics, Inc. | Solar tracking for terrestrial solar arrays with variable start and stop positions |
US8507837B2 (en) | 2008-10-24 | 2013-08-13 | Suncore Photovoltaics, Inc. | Techniques for monitoring solar array performance and applications thereof |
US9012766B2 (en) | 2009-11-12 | 2015-04-21 | Silevo, Inc. | Aluminum grid as backside conductor on epitaxial silicon thin film solar cells |
CN102687284A (zh) * | 2009-12-28 | 2012-09-19 | 夏普株式会社 | 太阳能电池单元的制造方法 |
US20120318340A1 (en) * | 2010-05-04 | 2012-12-20 | Silevo, Inc. | Back junction solar cell with tunnel oxide |
US9214576B2 (en) | 2010-06-09 | 2015-12-15 | Solarcity Corporation | Transparent conducting oxide for photovoltaic devices |
US9773928B2 (en) | 2010-09-10 | 2017-09-26 | Tesla, Inc. | Solar cell with electroplated metal grid |
US9800053B2 (en) | 2010-10-08 | 2017-10-24 | Tesla, Inc. | Solar panels with integrated cell-level MPPT devices |
JP5723143B2 (ja) * | 2010-12-06 | 2015-05-27 | シャープ株式会社 | 裏面電極型太陽電池の製造方法、および裏面電極型太陽電池 |
US9054256B2 (en) | 2011-06-02 | 2015-06-09 | Solarcity Corporation | Tunneling-junction solar cell with copper grid for concentrated photovoltaic application |
JP2013026524A (ja) * | 2011-07-22 | 2013-02-04 | Hitachi Chem Co Ltd | n型拡散層形成組成物、n型拡散層の製造方法、太陽電池素子の製造方法、及び太陽電池 |
US20140251425A1 (en) * | 2011-09-21 | 2014-09-11 | Arizona Board Of Regents, A Body Corporate Of The State Of Arizona | Heterostructure Si Solar Cells Using Wide-Bandgap Semiconductors |
KR101381844B1 (ko) * | 2012-04-24 | 2014-04-24 | 에스티엑스 솔라주식회사 | 양면형 태양전지 제조방법 |
WO2014055781A1 (en) | 2012-10-04 | 2014-04-10 | Silevo, Inc. | Photovoltaic devices with electroplated metal grids |
US9865754B2 (en) | 2012-10-10 | 2018-01-09 | Tesla, Inc. | Hole collectors for silicon photovoltaic cells |
US9281436B2 (en) | 2012-12-28 | 2016-03-08 | Solarcity Corporation | Radio-frequency sputtering system with rotary target for fabricating solar cells |
WO2014110520A1 (en) | 2013-01-11 | 2014-07-17 | Silevo, Inc. | Module fabrication of solar cells with low resistivity electrodes |
US10074755B2 (en) | 2013-01-11 | 2018-09-11 | Tesla, Inc. | High efficiency solar panel |
US9412884B2 (en) | 2013-01-11 | 2016-08-09 | Solarcity Corporation | Module fabrication of solar cells with low resistivity electrodes |
US9624595B2 (en) | 2013-05-24 | 2017-04-18 | Solarcity Corporation | Electroplating apparatus with improved throughput |
US10309012B2 (en) | 2014-07-03 | 2019-06-04 | Tesla, Inc. | Wafer carrier for reducing contamination from carbon particles and outgassing |
US9899546B2 (en) | 2014-12-05 | 2018-02-20 | Tesla, Inc. | Photovoltaic cells with electrodes adapted to house conductive paste |
US9947822B2 (en) | 2015-02-02 | 2018-04-17 | Tesla, Inc. | Bifacial photovoltaic module using heterojunction solar cells |
US9761744B2 (en) | 2015-10-22 | 2017-09-12 | Tesla, Inc. | System and method for manufacturing photovoltaic structures with a metal seed layer |
US9842956B2 (en) | 2015-12-21 | 2017-12-12 | Tesla, Inc. | System and method for mass-production of high-efficiency photovoltaic structures |
US9496429B1 (en) | 2015-12-30 | 2016-11-15 | Solarcity Corporation | System and method for tin plating metal electrodes |
US10115838B2 (en) | 2016-04-19 | 2018-10-30 | Tesla, Inc. | Photovoltaic structures with interlocking busbars |
US10672919B2 (en) | 2017-09-19 | 2020-06-02 | Tesla, Inc. | Moisture-resistant solar cells for solar roof tiles |
US11190128B2 (en) | 2018-02-27 | 2021-11-30 | Tesla, Inc. | Parallel-connected solar roof tile modules |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3437527A (en) * | 1966-10-26 | 1969-04-08 | Webb James E | Method for producing a solar cell having an integral protective covering |
US3460956A (en) * | 1968-07-19 | 1969-08-12 | Joseph Dahle | Titanate product and method of making the same |
US3993506A (en) * | 1975-09-25 | 1976-11-23 | Varian Associates | Photovoltaic cell employing lattice matched quaternary passivating layer |
US4101351A (en) * | 1976-11-15 | 1978-07-18 | Texas Instruments Incorporated | Process for fabricating inexpensive high performance solar cells using doped oxide junction and insitu anti-reflection coatings |
JPS5482992A (en) * | 1977-12-14 | 1979-07-02 | Sharp Corp | Solar battery and its manufacture |
IN152814B (es) * | 1978-08-08 | 1984-04-14 | Westinghouse Electric Corp |
-
1979
- 1979-08-14 US US06/066,368 patent/US4251285A/en not_active Expired - Lifetime
-
1980
- 1980-07-30 ZA ZA00804634A patent/ZA804634B/xx unknown
- 1980-08-01 AU AU61001/80A patent/AU537352B2/en not_active Ceased
- 1980-08-02 IN IN882/CAL/80A patent/IN152740B/en unknown
- 1980-08-04 MX MX183426A patent/MX155893A/es unknown
- 1980-08-08 IL IL60807A patent/IL60807A/xx not_active IP Right Cessation
- 1980-08-11 BR BR8005034A patent/BR8005034A/pt not_active IP Right Cessation
- 1980-08-13 ES ES494214A patent/ES494214A0/es active Granted
- 1980-08-14 DE DE8080104848T patent/DE3067142D1/de not_active Expired
- 1980-08-14 KR KR1019800003221A patent/KR830002294B1/ko active
- 1980-08-14 EP EP80104848A patent/EP0024057B1/en not_active Expired
- 1980-08-14 JP JP11117080A patent/JPS5660075A/ja active Pending
-
1985
- 1985-04-11 HK HK293/85A patent/HK29385A/xx unknown
- 1985-12-30 MY MY900/85A patent/MY8500900A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
US4251285A (en) | 1981-02-17 |
IL60807A0 (en) | 1980-10-26 |
MX155893A (es) | 1988-05-18 |
EP0024057B1 (en) | 1984-03-21 |
MY8500900A (en) | 1985-12-31 |
ZA804634B (en) | 1981-07-29 |
DE3067142D1 (en) | 1984-04-26 |
AU6100180A (en) | 1981-02-19 |
JPS5660075A (en) | 1981-05-23 |
HK29385A (en) | 1985-04-19 |
AU537352B2 (en) | 1984-06-21 |
IN152740B (es) | 1984-03-24 |
KR830003804A (ko) | 1983-06-22 |
EP0024057A1 (en) | 1981-02-18 |
ES8106817A1 (es) | 1981-08-01 |
IL60807A (en) | 1983-10-31 |
BR8005034A (pt) | 1981-02-24 |
KR830002294B1 (ko) | 1983-10-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
FD1A | Patent lapsed |
Effective date: 19971001 |