JPS5660075A - Method of coating reflection preventive film on silicon - Google Patents

Method of coating reflection preventive film on silicon

Info

Publication number
JPS5660075A
JPS5660075A JP11117080A JP11117080A JPS5660075A JP S5660075 A JPS5660075 A JP S5660075A JP 11117080 A JP11117080 A JP 11117080A JP 11117080 A JP11117080 A JP 11117080A JP S5660075 A JPS5660075 A JP S5660075A
Authority
JP
Japan
Prior art keywords
silicon
preventive film
reflection preventive
coating reflection
coating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11117080A
Other languages
English (en)
Inventor
Aatoratsuku Yorudasu Barento
Anna Yorudasu Rubomaira
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CBS Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of JPS5660075A publication Critical patent/JPS5660075A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S252/00—Compositions
    • Y10S252/95—Doping agent source material
JP11117080A 1979-08-14 1980-08-14 Method of coating reflection preventive film on silicon Pending JPS5660075A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/066,368 US4251285A (en) 1979-08-14 1979-08-14 Diffusion of dopant from optical coating and single step formation of PN junction in silicon solar cell and coating thereon

Publications (1)

Publication Number Publication Date
JPS5660075A true JPS5660075A (en) 1981-05-23

Family

ID=22069056

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11117080A Pending JPS5660075A (en) 1979-08-14 1980-08-14 Method of coating reflection preventive film on silicon

Country Status (14)

Country Link
US (1) US4251285A (ja)
EP (1) EP0024057B1 (ja)
JP (1) JPS5660075A (ja)
KR (1) KR830002294B1 (ja)
AU (1) AU537352B2 (ja)
BR (1) BR8005034A (ja)
DE (1) DE3067142D1 (ja)
ES (1) ES494214A0 (ja)
HK (1) HK29385A (ja)
IL (1) IL60807A (ja)
IN (1) IN152740B (ja)
MX (1) MX155893A (ja)
MY (1) MY8500900A (ja)
ZA (1) ZA804634B (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5609694A (en) * 1994-04-28 1997-03-11 Sharp Kabushiki Kaisha Solar cell and a method of manufacturing thereof
WO2012077597A1 (ja) * 2010-12-06 2012-06-14 シャープ株式会社 裏面電極型太陽電池の製造方法および裏面電極型太陽電池
JP2013026524A (ja) * 2011-07-22 2013-02-04 Hitachi Chem Co Ltd ｎ型拡散層形成組成物、ｎ型拡散層の製造方法、太陽電池素子の製造方法、及び太陽電池

Families Citing this family (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4619719A (en) * 1982-01-28 1986-10-28 Owens-Illinois, Inc. Process for forming a doped oxide film and composite article
US4571366A (en) * 1982-02-11 1986-02-18 Owens-Illinois, Inc. Process for forming a doped oxide film and doped semiconductor
US4605450A (en) * 1982-02-11 1986-08-12 Owens-Illinois, Inc. Process for forming a doped oxide film and doped semiconductor
DE3340874A1 (de) * 1983-11-11 1985-05-23 Telefunken electronic GmbH, 7100 Heilbronn Verfahren zum herstellen einer solarzelle
JPS60140880A (ja) * 1983-12-28 1985-07-25 Hitachi Ltd 太陽電池の製造方法
US4744973A (en) * 1985-11-29 1988-05-17 Westinghouse Electric Corp. Inorganic polymeric cationic ion exchange matrix
US4808464A (en) * 1987-07-23 1989-02-28 Westinghouse Electric Corp. Insulating ferromagnetic amorphous metal strips
US4759949A (en) * 1987-07-23 1988-07-26 Westinghouse Electric Corp. Method of insulating ferromagnetic amorphous metal continuous strip
JPH0690014A (ja) * 1992-07-22 1994-03-29 Mitsubishi Electric Corp 薄型太陽電池及びその製造方法，エッチング方法及び自動エッチング装置，並びに半導体装置の製造方法
US5270248A (en) * 1992-08-07 1993-12-14 Mobil Solar Energy Corporation Method for forming diffusion junctions in solar cell substrates
US5478776A (en) * 1993-12-27 1995-12-26 At&T Corp. Process for fabricating integrated circuit containing shallow junction using dopant source containing organic polymer or ammonium silicate
US5792280A (en) * 1994-05-09 1998-08-11 Sandia Corporation Method for fabricating silicon cells
AUPM996094A0 (en) * 1994-12-08 1995-01-05 Pacific Solar Pty Limited Multilayer solar cells with bypass diode protection
US6278053B1 (en) * 1997-03-25 2001-08-21 Evergreen Solar, Inc. Decals and methods for providing an antireflective coating and metallization on a solar cell
AU3639999A (en) * 1998-04-13 1999-11-01 Trustees Of Princeton University, The Modification of polymer optoelectronic properties after film formation impurity addition or removal
US7090890B1 (en) 1998-04-13 2006-08-15 The Trustees Of Princeton University Modification of polymer optoelectronic properties after film formation by impurity addition or removal
AUPP437598A0 (en) * 1998-06-29 1998-07-23 Unisearch Limited A self aligning method for forming a selective emitter and metallization in a solar cell
JP4812147B2 (ja) * 1999-09-07 2011-11-09 株式会社日立製作所 太陽電池の製造方法
US7402448B2 (en) * 2003-01-31 2008-07-22 Bp Corporation North America Inc. Photovoltaic cell and production thereof
WO2008027956A2 (en) * 2006-08-31 2008-03-06 Despatch Industries Limited Partnership Continuous dopant addition
US8513514B2 (en) 2008-10-24 2013-08-20 Suncore Photovoltaics, Inc. Solar tracking for terrestrial solar arrays with variable start and stop positions
US8507837B2 (en) 2008-10-24 2013-08-13 Suncore Photovoltaics, Inc. Techniques for monitoring solar array performance and applications thereof
US9012766B2 (en) 2009-11-12 2015-04-21 Silevo, Inc. Aluminum grid as backside conductor on epitaxial silicon thin film solar cells
US20120301998A1 (en) * 2009-12-28 2012-11-29 Takahiro Hashimoto Method for manufacturing solar cell
US20120318340A1 (en) * 2010-05-04 2012-12-20 Silevo, Inc. Back junction solar cell with tunnel oxide
US9214576B2 (en) 2010-06-09 2015-12-15 Solarcity Corporation Transparent conducting oxide for photovoltaic devices
US9773928B2 (en) 2010-09-10 2017-09-26 Tesla, Inc. Solar cell with electroplated metal grid
US9800053B2 (en) 2010-10-08 2017-10-24 Tesla, Inc. Solar panels with integrated cell-level MPPT devices
US9054256B2 (en) 2011-06-02 2015-06-09 Solarcity Corporation Tunneling-junction solar cell with copper grid for concentrated photovoltaic application
WO2013043809A2 (en) * 2011-09-21 2013-03-28 Arizona Board Of Regents, A Body Corporate Of The State Of Arizona Heterostructure si solar cells using wide-bandgap semiconductors
KR101381844B1 (ko) * 2012-04-24 2014-04-24 에스티엑스 솔라주식회사 양면형 태양전지 제조방법
AU2013326971B2 (en) 2012-10-04 2016-06-30 Tesla, Inc. Photovoltaic devices with electroplated metal grids
US9865754B2 (en) 2012-10-10 2018-01-09 Tesla, Inc. Hole collectors for silicon photovoltaic cells
US9281436B2 (en) 2012-12-28 2016-03-08 Solarcity Corporation Radio-frequency sputtering system with rotary target for fabricating solar cells
US9219174B2 (en) 2013-01-11 2015-12-22 Solarcity Corporation Module fabrication of solar cells with low resistivity electrodes
US10074755B2 (en) 2013-01-11 2018-09-11 Tesla, Inc. High efficiency solar panel
US9412884B2 (en) 2013-01-11 2016-08-09 Solarcity Corporation Module fabrication of solar cells with low resistivity electrodes
US9624595B2 (en) 2013-05-24 2017-04-18 Solarcity Corporation Electroplating apparatus with improved throughput
US10309012B2 (en) 2014-07-03 2019-06-04 Tesla, Inc. Wafer carrier for reducing contamination from carbon particles and outgassing
US9899546B2 (en) 2014-12-05 2018-02-20 Tesla, Inc. Photovoltaic cells with electrodes adapted to house conductive paste
US9947822B2 (en) 2015-02-02 2018-04-17 Tesla, Inc. Bifacial photovoltaic module using heterojunction solar cells
US9761744B2 (en) 2015-10-22 2017-09-12 Tesla, Inc. System and method for manufacturing photovoltaic structures with a metal seed layer
US9842956B2 (en) 2015-12-21 2017-12-12 Tesla, Inc. System and method for mass-production of high-efficiency photovoltaic structures
US9496429B1 (en) 2015-12-30 2016-11-15 Solarcity Corporation System and method for tin plating metal electrodes
US10115838B2 (en) 2016-04-19 2018-10-30 Tesla, Inc. Photovoltaic structures with interlocking busbars
US10672919B2 (en) 2017-09-19 2020-06-02 Tesla, Inc. Moisture-resistant solar cells for solar roof tiles
US11190128B2 (en) 2018-02-27 2021-11-30 Tesla, Inc. Parallel-connected solar roof tile modules

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5482992A (en) * 1977-12-14 1979-07-02 Sharp Corp Solar battery and its manufacture

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3437527A (en) * 1966-10-26 1969-04-08 Webb James E Method for producing a solar cell having an integral protective covering
US3460956A (en) * 1968-07-19 1969-08-12 Joseph Dahle Titanate product and method of making the same
US3993506A (en) * 1975-09-25 1976-11-23 Varian Associates Photovoltaic cell employing lattice matched quaternary passivating layer
US4101351A (en) * 1976-11-15 1978-07-18 Texas Instruments Incorporated Process for fabricating inexpensive high performance solar cells using doped oxide junction and insitu anti-reflection coatings
IN152814B (ja) * 1978-08-08 1984-04-14 Westinghouse Electric Corp

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5482992A (en) * 1977-12-14 1979-07-02 Sharp Corp Solar battery and its manufacture

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5609694A (en) * 1994-04-28 1997-03-11 Sharp Kabushiki Kaisha Solar cell and a method of manufacturing thereof
WO2012077597A1 (ja) * 2010-12-06 2012-06-14 シャープ株式会社 裏面電極型太陽電池の製造方法および裏面電極型太陽電池
JP2012124193A (ja) * 2010-12-06 2012-06-28 Sharp Corp 裏面電極型太陽電池の製造方法、および裏面電極型太陽電池
JP2013026524A (ja) * 2011-07-22 2013-02-04 Hitachi Chem Co Ltd ｎ型拡散層形成組成物、ｎ型拡散層の製造方法、太陽電池素子の製造方法、及び太陽電池

Also Published As

Publication number Publication date
KR830003804A (ko) 1983-06-22
KR830002294B1 (ko) 1983-10-21
HK29385A (en) 1985-04-19
IN152740B (ja) 1984-03-24
ES8106817A1 (es) 1981-08-01
BR8005034A (pt) 1981-02-24
IL60807A0 (en) 1980-10-26
MX155893A (es) 1988-05-18
IL60807A (en) 1983-10-31
MY8500900A (en) 1985-12-31
AU6100180A (en) 1981-02-19
US4251285A (en) 1981-02-17
EP0024057A1 (en) 1981-02-18
EP0024057B1 (en) 1984-03-21
DE3067142D1 (en) 1984-04-26
AU537352B2 (en) 1984-06-21
ES494214A0 (es) 1981-08-01
ZA804634B (en) 1981-07-29

Similar Documents

Publication Publication Date Title
JPS5660075A (en) Method of coating reflection preventive film on silicon
GB2137661B (en) Wafer coating apparatus
JPS5579443A (en) Film coating method
DE3168671D1 (en) Anti-fogging coating film
JPS5621383A (en) Method of manufacturing thin film substrate impage coupling device
JPS57130924A (en) Manufacture of film forming coating agent
JPS5562725A (en) Method of forming narrow diffused region on silicon substrate
JPS5367517A (en) Method of forming multiilayer coated film
JPS5626918A (en) Method of coating kinds of surfaces
AU544798B2 (en) Preparation of silicon from polychlorosilane and its use for coating substrates
JPS57121064A (en) Formation of surface-even thin film
JPS55105382A (en) Method of roughening surface of silicon substrate
AU553492B2 (en) Silicon coating
JPS5567135A (en) Method of forming metallic film of semiconductor device
JPS57156032A (en) Method of forming thin film
DE3064449D1 (en) An apparatus for coating substrates
GB2045645B (en) Coating of substrates
GB2080817B (en) Method for the formation of abrasionresistant coating film
GB8308444D0 (en) Measuring thickness of coating on moving material
JPS55138892A (en) Method of forming thin film
GB2092022B (en) Production of protective thin film coating
JPS5649588A (en) Method of forming thin film for ceramic substrate
JPS57166256A (en) Device for varying course of film
JPS57201804A (en) Device for measuring thickness of film
JPS57102343A (en) Method of forming film