JPS5623742A - Method of manufactufacturing pn junction - Google Patents

Method of manufactufacturing pn junction

Info

Publication number
JPS5623742A
JPS5623742A JP10062980A JP10062980A JPS5623742A JP S5623742 A JPS5623742 A JP S5623742A JP 10062980 A JP10062980 A JP 10062980A JP 10062980 A JP10062980 A JP 10062980A JP S5623742 A JPS5623742 A JP S5623742A
Authority
JP
Japan
Prior art keywords
manufactufacturing
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10062980A
Other languages
Japanese (ja)
Inventor
Esu Murutaani Jiyagiiru
Sandeyuu Jiyagutaaru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Arris Technology Inc
Original Assignee
Arris Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Arris Technology Inc filed Critical Arris Technology Inc
Publication of JPS5623742A publication Critical patent/JPS5623742A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H01L21/2652—Through-implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Thyristors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP10062980A 1979-08-01 1980-07-24 Method of manufactufacturing pn junction Pending JPS5623742A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US6267679A 1979-08-01 1979-08-01

Publications (1)

Publication Number Publication Date
JPS5623742A true JPS5623742A (en) 1981-03-06

Family

ID=22044093

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10062980A Pending JPS5623742A (en) 1979-08-01 1980-07-24 Method of manufactufacturing pn junction

Country Status (5)

Country Link
JP (1) JPS5623742A (en)
DE (1) DE3028185A1 (en)
FR (1) FR2462780A1 (en)
GB (1) GB2056168A (en)
IT (1) IT1145411B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61181147A (en) * 1985-02-06 1986-08-13 Nec Corp Manufacture of semiconductor device
JP2000507396A (en) * 1996-03-27 2000-06-13 エービービー リサーチ リミテッド Semiconductor device having a semiconductor layer of SiC and method of making such a device

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4369072A (en) * 1981-01-22 1983-01-18 International Business Machines Corp. Method for forming IGFET devices having improved drain voltage characteristics
JPS60117681A (en) * 1983-11-29 1985-06-25 Mitsubishi Electric Corp Semiconductor device
JPH01147829A (en) * 1987-12-04 1989-06-09 Toshiba Corp Manufacture of semiconductor device
JP2706460B2 (en) * 1988-03-14 1998-01-28 富士通株式会社 Ion implantation method

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4836986A (en) * 1971-09-09 1973-05-31

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT956828B (en) * 1971-08-05 1973-10-10 Rca Corp PROCESS FOR OBTAINING DIFFUSED SEMICONDUCTOR REGIO NI WITH A REDUCED NUMBER OF CRYSTAL DEFECTS
DE2304647C2 (en) * 1973-01-31 1984-06-28 Siemens AG, 1000 Berlin und 8000 München Method for producing a doped zone in a semiconductor body
JPS543479A (en) * 1977-06-09 1979-01-11 Toshiba Corp Semiconductor device and its manufacture

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4836986A (en) * 1971-09-09 1973-05-31

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61181147A (en) * 1985-02-06 1986-08-13 Nec Corp Manufacture of semiconductor device
JP2000507396A (en) * 1996-03-27 2000-06-13 エービービー リサーチ リミテッド Semiconductor device having a semiconductor layer of SiC and method of making such a device

Also Published As

Publication number Publication date
FR2462780A1 (en) 1981-02-13
IT8049389A0 (en) 1980-07-31
GB2056168A (en) 1981-03-11
IT1145411B (en) 1986-11-05
FR2462780B1 (en) 1983-02-18
DE3028185A1 (en) 1981-02-26

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