IT956828B - PROCESS FOR OBTAINING DIFFUSED SEMICONDUCTOR REGIO NI WITH A REDUCED NUMBER OF CRYSTAL DEFECTS - Google Patents

PROCESS FOR OBTAINING DIFFUSED SEMICONDUCTOR REGIO NI WITH A REDUCED NUMBER OF CRYSTAL DEFECTS

Info

Publication number
IT956828B
IT956828B IT2620172A IT2620172A IT956828B IT 956828 B IT956828 B IT 956828B IT 2620172 A IT2620172 A IT 2620172A IT 2620172 A IT2620172 A IT 2620172A IT 956828 B IT956828 B IT 956828B
Authority
IT
Italy
Prior art keywords
regio
reduced number
crystal defects
diffused semiconductor
obtaining diffused
Prior art date
Application number
IT2620172A
Other languages
Italian (it)
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Application granted granted Critical
Publication of IT956828B publication Critical patent/IT956828B/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Bipolar Transistors (AREA)
IT2620172A 1971-08-05 1972-06-24 PROCESS FOR OBTAINING DIFFUSED SEMICONDUCTOR REGIO NI WITH A REDUCED NUMBER OF CRYSTAL DEFECTS IT956828B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US16942871A 1971-08-05 1971-08-05

Publications (1)

Publication Number Publication Date
IT956828B true IT956828B (en) 1973-10-10

Family

ID=22615646

Family Applications (1)

Application Number Title Priority Date Filing Date
IT2620172A IT956828B (en) 1971-08-05 1972-06-24 PROCESS FOR OBTAINING DIFFUSED SEMICONDUCTOR REGIO NI WITH A REDUCED NUMBER OF CRYSTAL DEFECTS

Country Status (7)

Country Link
JP (1) JPS4826364A (en)
BE (1) BE787233A (en)
CA (1) CA972083A (en)
DE (1) DE2235540A1 (en)
FR (1) FR2148205B1 (en)
GB (1) GB1349219A (en)
IT (1) IT956828B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2056168A (en) * 1979-08-01 1981-03-11 Gen Instrument Corp Method of fabricating P-N junction with high breakdown voltage
GB2351390A (en) 1999-06-16 2000-12-27 Sharp Kk A semiconductor material comprising two dopants

Also Published As

Publication number Publication date
CA972083A (en) 1975-07-29
FR2148205A1 (en) 1973-03-11
GB1349219A (en) 1974-04-03
FR2148205B1 (en) 1977-08-26
BE787233A (en) 1972-12-01
JPS4826364A (en) 1973-04-06
DE2235540A1 (en) 1973-02-22

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