FR2148205A1 - - Google Patents

Info

Publication number
FR2148205A1
FR2148205A1 FR7227896A FR7227896A FR2148205A1 FR 2148205 A1 FR2148205 A1 FR 2148205A1 FR 7227896 A FR7227896 A FR 7227896A FR 7227896 A FR7227896 A FR 7227896A FR 2148205 A1 FR2148205 A1 FR 2148205A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7227896A
Other languages
French (fr)
Other versions
FR2148205B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of FR2148205A1 publication Critical patent/FR2148205A1/fr
Application granted granted Critical
Publication of FR2148205B1 publication Critical patent/FR2148205B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Bipolar Transistors (AREA)
FR7227896A 1971-08-05 1972-08-02 Expired FR2148205B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US16942871A 1971-08-05 1971-08-05

Publications (2)

Publication Number Publication Date
FR2148205A1 true FR2148205A1 (en) 1973-03-11
FR2148205B1 FR2148205B1 (en) 1977-08-26

Family

ID=22615646

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7227896A Expired FR2148205B1 (en) 1971-08-05 1972-08-02

Country Status (7)

Country Link
JP (1) JPS4826364A (en)
BE (1) BE787233A (en)
CA (1) CA972083A (en)
DE (1) DE2235540A1 (en)
FR (1) FR2148205B1 (en)
GB (1) GB1349219A (en)
IT (1) IT956828B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2462780A1 (en) * 1979-08-01 1981-02-13 Gen Instrument Corp METHOD FOR MANUFACTURING A HIGH BREAKING VOLTAGE P-N JUNCTION

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2351390A (en) * 1999-06-16 2000-12-27 Sharp Kk A semiconductor material comprising two dopants

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2462780A1 (en) * 1979-08-01 1981-02-13 Gen Instrument Corp METHOD FOR MANUFACTURING A HIGH BREAKING VOLTAGE P-N JUNCTION

Also Published As

Publication number Publication date
BE787233A (en) 1972-12-01
IT956828B (en) 1973-10-10
FR2148205B1 (en) 1977-08-26
CA972083A (en) 1975-07-29
GB1349219A (en) 1974-04-03
JPS4826364A (en) 1973-04-06
DE2235540A1 (en) 1973-02-22

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Legal Events

Date Code Title Description
ST Notification of lapse