CA972083A - Process for obtaining diffused semiconductor regions having a reduced number of crystal defects - Google Patents

Process for obtaining diffused semiconductor regions having a reduced number of crystal defects

Info

Publication number
CA972083A
CA972083A CA147,515A CA147515A CA972083A CA 972083 A CA972083 A CA 972083A CA 147515 A CA147515 A CA 147515A CA 972083 A CA972083 A CA 972083A
Authority
CA
Canada
Prior art keywords
semiconductor regions
reduced number
crystal defects
diffused semiconductor
obtaining diffused
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA147,515A
Other versions
CA147515S (en
Inventor
Peter J. Kannam
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Application granted granted Critical
Publication of CA972083A publication Critical patent/CA972083A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Bipolar Transistors (AREA)
CA147,515A 1971-08-05 1972-07-19 Process for obtaining diffused semiconductor regions having a reduced number of crystal defects Expired CA972083A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US16942871A 1971-08-05 1971-08-05

Publications (1)

Publication Number Publication Date
CA972083A true CA972083A (en) 1975-07-29

Family

ID=22615646

Family Applications (1)

Application Number Title Priority Date Filing Date
CA147,515A Expired CA972083A (en) 1971-08-05 1972-07-19 Process for obtaining diffused semiconductor regions having a reduced number of crystal defects

Country Status (7)

Country Link
JP (1) JPS4826364A (en)
BE (1) BE787233A (en)
CA (1) CA972083A (en)
DE (1) DE2235540A1 (en)
FR (1) FR2148205B1 (en)
GB (1) GB1349219A (en)
IT (1) IT956828B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2056168A (en) * 1979-08-01 1981-03-11 Gen Instrument Corp Method of fabricating P-N junction with high breakdown voltage
GB2351390A (en) 1999-06-16 2000-12-27 Sharp Kk A semiconductor material comprising two dopants

Also Published As

Publication number Publication date
FR2148205A1 (en) 1973-03-11
GB1349219A (en) 1974-04-03
FR2148205B1 (en) 1977-08-26
IT956828B (en) 1973-10-10
BE787233A (en) 1972-12-01
JPS4826364A (en) 1973-04-06
DE2235540A1 (en) 1973-02-22

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