JPS4826364A - - Google Patents

Info

Publication number
JPS4826364A
JPS4826364A JP7872472A JP7872472A JPS4826364A JP S4826364 A JPS4826364 A JP S4826364A JP 7872472 A JP7872472 A JP 7872472A JP 7872472 A JP7872472 A JP 7872472A JP S4826364 A JPS4826364 A JP S4826364A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7872472A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4826364A publication Critical patent/JPS4826364A/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Bipolar Transistors (AREA)
JP7872472A 1971-08-05 1972-08-04 Pending JPS4826364A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US16942871A 1971-08-05 1971-08-05

Publications (1)

Publication Number Publication Date
JPS4826364A true JPS4826364A (en) 1973-04-06

Family

ID=22615646

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7872472A Pending JPS4826364A (en) 1971-08-05 1972-08-04

Country Status (7)

Country Link
JP (1) JPS4826364A (en)
BE (1) BE787233A (en)
CA (1) CA972083A (en)
DE (1) DE2235540A1 (en)
FR (1) FR2148205B1 (en)
GB (1) GB1349219A (en)
IT (1) IT956828B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2056168A (en) * 1979-08-01 1981-03-11 Gen Instrument Corp Method of fabricating P-N junction with high breakdown voltage
GB2351390A (en) 1999-06-16 2000-12-27 Sharp Kk A semiconductor material comprising two dopants

Also Published As

Publication number Publication date
CA972083A (en) 1975-07-29
FR2148205A1 (en) 1973-03-11
GB1349219A (en) 1974-04-03
FR2148205B1 (en) 1977-08-26
IT956828B (en) 1973-10-10
BE787233A (en) 1972-12-01
DE2235540A1 (en) 1973-02-22

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