JPS5587443A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5587443A
JPS5587443A JP16315978A JP16315978A JPS5587443A JP S5587443 A JPS5587443 A JP S5587443A JP 16315978 A JP16315978 A JP 16315978A JP 16315978 A JP16315978 A JP 16315978A JP S5587443 A JPS5587443 A JP S5587443A
Authority
JP
Japan
Prior art keywords
film
region
substrate
sio
semiconductor element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16315978A
Other languages
Japanese (ja)
Inventor
Shuzo Kagawa
Hirokazu Fukuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16315978A priority Critical patent/JPS5587443A/en
Publication of JPS5587443A publication Critical patent/JPS5587443A/en
Pending legal-status Critical Current

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  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: To obtain a sufficient Ge semiconductor element protecting effect by forming on the surface of the semiconductor element a passivation film consisting of a lamination of an SiO2 film and an Si3N4 film which is formed on the SiO2 film while the temperature of a substrate is kept at not higher than 700°C.
CONSTITUTION: An n-type guard ring region 3 is formed in a p--type Ge substrate 1, and an n+-type region 2 is provided in the central portion of the region 3. A lamination film consisting of an SiO2 film 5 of around 2000Å in thickness and an Si3N4 film 6 of around 800Å in thickness which is grown by CVD method as the temperature of the substrate 1 is kept at not higher than 700°C is formed as a passivation film on the whole surface of the substrate, to completely cover therewith an exposed portion of a PN-junction. A bore is then made in the region 2, and an ohmic electrode 4 of Al is coated on the exposed region 2 as the electrode 4 is extended over the film 6. According to this structure, the passivation film is never deteriorated with the lapse of time so that the surface of the semiconductor element can be sufficiently protected.
COPYRIGHT: (C)1980,JPO&Japio
JP16315978A 1978-12-26 1978-12-26 Semiconductor device Pending JPS5587443A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16315978A JPS5587443A (en) 1978-12-26 1978-12-26 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16315978A JPS5587443A (en) 1978-12-26 1978-12-26 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5587443A true JPS5587443A (en) 1980-07-02

Family

ID=15768344

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16315978A Pending JPS5587443A (en) 1978-12-26 1978-12-26 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5587443A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59143362A (en) * 1983-02-03 1984-08-16 Fuji Xerox Co Ltd Passivation film

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5195782A (en) * 1975-02-19 1976-08-21 Nijuzetsuenmakuno seiseihoho

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5195782A (en) * 1975-02-19 1976-08-21 Nijuzetsuenmakuno seiseihoho

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59143362A (en) * 1983-02-03 1984-08-16 Fuji Xerox Co Ltd Passivation film
JPH0582065B2 (en) * 1983-02-03 1993-11-17 Fuji Xerox Co Ltd

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