ATE59116T1 - Halbleiteranordnung mit mehreren uebergaengen. - Google Patents

Halbleiteranordnung mit mehreren uebergaengen.

Info

Publication number
ATE59116T1
ATE59116T1 AT85112318T AT85112318T ATE59116T1 AT E59116 T1 ATE59116 T1 AT E59116T1 AT 85112318 T AT85112318 T AT 85112318T AT 85112318 T AT85112318 T AT 85112318T AT E59116 T1 ATE59116 T1 AT E59116T1
Authority
AT
Austria
Prior art keywords
layer
junction semiconductor
multiple junction
semiconductor arrangements
diffusion
Prior art date
Application number
AT85112318T
Other languages
English (en)
Inventor
Jun Takada
Minori Yamaguchi
Yoshihisa Tawada
Original Assignee
Kanegafuchi Chemical Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kanegafuchi Chemical Ind filed Critical Kanegafuchi Chemical Ind
Application granted granted Critical
Publication of ATE59116T1 publication Critical patent/ATE59116T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H10F10/172—Photovoltaic cells having only PIN junction potential barriers comprising multiple PIN junctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/50—PIN diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/166—Amorphous semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/732—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between stacked chips
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
AT85112318T 1984-10-11 1985-09-28 Halbleiteranordnung mit mehreren uebergaengen. ATE59116T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP59213944A JPS6191974A (ja) 1984-10-11 1984-10-11 耐熱性マルチジヤンクシヨン型半導体素子
EP85112318A EP0177864B1 (de) 1984-10-11 1985-09-28 Halbleiteranordnung mit mehreren Übergängen

Publications (1)

Publication Number Publication Date
ATE59116T1 true ATE59116T1 (de) 1990-12-15

Family

ID=16647630

Family Applications (1)

Application Number Title Priority Date Filing Date
AT85112318T ATE59116T1 (de) 1984-10-11 1985-09-28 Halbleiteranordnung mit mehreren uebergaengen.

Country Status (10)

Country Link
US (1) US4907052A (de)
EP (1) EP0177864B1 (de)
JP (1) JPS6191974A (de)
KR (1) KR950001956B1 (de)
CN (1) CN1003027B (de)
AT (1) ATE59116T1 (de)
AU (1) AU589568B2 (de)
CA (1) CA1252229A (de)
DE (1) DE3580891D1 (de)
RU (1) RU2050632C1 (de)

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63503103A (ja) * 1985-09-30 1988-11-10 鐘淵化学工業株式会社 マルチジャンクション型半導体デバイス
JPS6366976A (ja) * 1986-09-08 1988-03-25 Semiconductor Energy Lab Co Ltd 光電変換半導体装置
JPS6350149U (de) * 1986-09-19 1988-04-05
JPS6384075A (ja) * 1986-09-26 1988-04-14 Sanyo Electric Co Ltd 光起電力装置
JPS63100858U (de) * 1986-12-19 1988-06-30
JPS63157484A (ja) * 1986-12-22 1988-06-30 Kanegafuchi Chem Ind Co Ltd 半導体装置
JPH07114292B2 (ja) * 1986-12-22 1995-12-06 鐘淵化学工業株式会社 半導体装置及びその製法
JPS63157483A (ja) * 1986-12-22 1988-06-30 Kanegafuchi Chem Ind Co Ltd 半導体装置
JPH01128477A (ja) * 1987-11-12 1989-05-22 Ricoh Co Ltd アモルファスシリコン光センサー
US5021849A (en) * 1989-10-30 1991-06-04 Motorola, Inc. Compact SRAM cell with polycrystalline silicon diode load
US5151387A (en) 1990-04-30 1992-09-29 Sgs-Thomson Microelectronics, Inc. Polycrystalline silicon contact structure
US5432129A (en) * 1993-04-29 1995-07-11 Sgs-Thomson Microelectronics, Inc. Method of forming low resistance contacts at the junction between regions having different conductivity types
KR100275715B1 (ko) * 1993-12-28 2000-12-15 윤종용 수소화 효과 증대를 위한 반도체 소자의 제조 방법
US5624869A (en) * 1994-04-13 1997-04-29 International Business Machines Corporation Method of forming a film for a multilayer Semiconductor device for improving thermal stability of cobalt silicide using platinum or nitrogen
US6197628B1 (en) 1998-08-27 2001-03-06 Micron Technology, Inc. Ruthenium silicide diffusion barrier layers and methods of forming same
DE102005013537A1 (de) * 2004-03-24 2005-10-20 Sharp Kk Fotoelektrischer Wandler und Herstellverfahren für einen solchen
US10374120B2 (en) * 2005-02-18 2019-08-06 Koninklijke Philips N.V. High efficiency solar cells utilizing wafer bonding and layer transfer to integrate non-lattice matched materials
US8203071B2 (en) 2007-01-18 2012-06-19 Applied Materials, Inc. Multi-junction solar cells and methods and apparatuses for forming the same
TWI349371B (en) * 2007-02-13 2011-09-21 Epistar Corp An optoelectronical semiconductor device having a bonding structure
CN101369582B (zh) * 2007-08-15 2011-03-30 旺宏电子股份有限公司 垂直式非易失性存储器及其制造方法
US20090104733A1 (en) * 2007-10-22 2009-04-23 Yong Kee Chae Microcrystalline silicon deposition for thin film solar applications
US7741144B2 (en) * 2007-11-02 2010-06-22 Applied Materials, Inc. Plasma treatment between deposition processes
WO2009059240A1 (en) * 2007-11-02 2009-05-07 Applied Materials, Inc. Intrinsic amorphous silicon layer
US8491718B2 (en) * 2008-05-28 2013-07-23 Karin Chaudhari Methods of growing heteroepitaxial single crystal or large grained semiconductor films and devices thereon
WO2009151979A2 (en) * 2008-06-09 2009-12-17 4Power, Llc High-efficiency solar cell structures and methods
CN102165600B (zh) * 2008-09-26 2013-09-25 株式会社半导体能源研究所 光电转换器件及其制造方法
DE102008054435A1 (de) * 2008-12-09 2010-06-10 Universität Zu Köln Organische Leuchtdiode mit optischem Resonator nebst Herstellungsverfahren
CN102422428A (zh) * 2009-04-07 2012-04-18 北美Agc平板玻璃公司 用于光伏器件应用的改善的硅薄膜沉积
US20110124146A1 (en) * 2009-05-29 2011-05-26 Pitera Arthur J Methods of forming high-efficiency multi-junction solar cell structures
KR101074290B1 (ko) * 2009-09-04 2011-10-18 한국철강 주식회사 광기전력 장치 및 광기전력 장치의 제조 방법
US20110088760A1 (en) * 2009-10-20 2011-04-21 Applied Materials, Inc. Methods of forming an amorphous silicon layer for thin film solar cell application
TW201123481A (en) * 2009-12-29 2011-07-01 Auria Solar Co Ltd Solar cell and manufacturing method thereof
CN102117860B (zh) * 2010-01-06 2013-07-31 京东方科技集团股份有限公司 三结叠层太阳能薄膜电池及其制备方法
KR101032270B1 (ko) * 2010-03-17 2011-05-06 한국철강 주식회사 플렉서블 또는 인플렉서블 기판을 포함하는 광기전력 장치 및 광기전력 장치의 제조 방법
US8293643B2 (en) 2010-06-21 2012-10-23 International Business Machines Corporation Method and structure of forming silicide and diffusion barrier layer with direct deposited film on silicon
US8604330B1 (en) 2010-12-06 2013-12-10 4Power, Llc High-efficiency solar-cell arrays with integrated devices and methods for forming them
US20120048329A1 (en) * 2011-06-02 2012-03-01 Lalita Manchanda Charge-coupled photovoltaic devices
US20130264214A1 (en) * 2012-04-04 2013-10-10 Rohm And Haas Electronic Materials Llc Metal plating for ph sensitive applications
WO2017139751A1 (en) 2016-02-12 2017-08-17 Rhode Island Board Of Education Temperature and thermal gradient sensor for ceramic matrix composites and methods of preparation thereof
WO2018006075A1 (en) * 2016-07-01 2018-01-04 Rhode Island Council On Postsecondary Education High resolution strain gages for ceramic matrix composites and methods of manufacture thereof
US10782190B1 (en) 2017-12-14 2020-09-22 University Of Rhode Island Board Of Trustees Resistance temperature detector (RTD) for ceramic matrix composites
CN118946178A (zh) * 2024-08-22 2024-11-12 滁州捷泰新能源科技有限公司 一种钙钛矿/晶体硅叠层电池及其制备方法

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS604591B2 (ja) * 1973-11-02 1985-02-05 株式会社日立製作所 半導体集積回路装置
US4190852A (en) * 1978-09-14 1980-02-26 Warner Raymond M Jr Photovoltaic semiconductor device and method of making same
JPS6041878B2 (ja) * 1979-02-14 1985-09-19 シャープ株式会社 薄膜太陽電池装置
JPS55111180A (en) * 1979-02-19 1980-08-27 Sharp Corp Thin-film solar battery of high output voltage
US4272641A (en) * 1979-04-19 1981-06-09 Rca Corporation Tandem junction amorphous silicon solar cells
US4316049A (en) * 1979-08-28 1982-02-16 Rca Corporation High voltage series connected tandem junction solar battery
JPS5661173A (en) * 1979-10-24 1981-05-26 Fuji Electric Co Ltd Amorphous semiconductor photovoltaic cell
US4522663A (en) * 1980-09-09 1985-06-11 Sovonics Solar Systems Method for optimizing photoresponsive amorphous alloys and devices
JPS57103370A (en) * 1980-12-19 1982-06-26 Agency Of Ind Science & Technol Amorphous semiconductor solar cell
US4387265A (en) * 1981-07-17 1983-06-07 University Of Delaware Tandem junction amorphous semiconductor photovoltaic cell
JPS58101469A (ja) * 1981-12-11 1983-06-16 Seiko Epson Corp 薄膜太陽電池
US4379943A (en) * 1981-12-14 1983-04-12 Energy Conversion Devices, Inc. Current enhanced photovoltaic device
US4415760A (en) * 1982-04-12 1983-11-15 Chevron Research Company Amorphous silicon solar cells incorporating an insulating layer in the body of amorphous silicon and a method of suppressing the back diffusion of holes into an N-type region
US4479027A (en) * 1982-09-24 1984-10-23 Todorof William J Multi-layer thin-film, flexible silicon alloy photovoltaic cell
DE8232492U1 (de) * 1982-11-19 1986-03-27 Siemens AG, 1000 Berlin und 8000 München Solarzelle aus amorphem Silizium
US4604636A (en) * 1983-05-11 1986-08-05 Chronar Corp. Microcrystalline semiconductor method and devices
US4598306A (en) * 1983-07-28 1986-07-01 Energy Conversion Devices, Inc. Barrier layer for photovoltaic devices
US4536647A (en) * 1983-07-15 1985-08-20 Atalla Corporation Pocket banking terminal, method and system
US4536607A (en) * 1984-03-01 1985-08-20 Wiesmann Harold J Photovoltaic tandem cell
JPS60211987A (ja) * 1984-04-06 1985-10-24 Hitachi Ltd 多層構造シリコン太陽電池
AU576594B2 (en) * 1984-06-15 1988-09-01 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Heat-resistant thin film photoelectric converter
JPS6249672A (ja) * 1985-08-29 1987-03-04 Sumitomo Electric Ind Ltd アモルフアス光起電力素子

Also Published As

Publication number Publication date
EP0177864A3 (en) 1987-03-25
KR950001956B1 (ko) 1995-03-07
EP0177864B1 (de) 1990-12-12
US4907052A (en) 1990-03-06
EP0177864A2 (de) 1986-04-16
KR860003675A (ko) 1986-05-28
JPS6191974A (ja) 1986-05-10
CN85107988A (zh) 1986-04-10
RU2050632C1 (ru) 1995-12-20
CN1003027B (zh) 1989-01-04
CA1252229A (en) 1989-04-04
DE3580891D1 (de) 1991-01-24
AU589568B2 (en) 1989-10-19
AU4811085A (en) 1986-04-17

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Legal Events

Date Code Title Description
UEP Publication of translation of european patent specification
REN Ceased due to non-payment of the annual fee