JPS57103370A - Amorphous semiconductor solar cell - Google Patents

Amorphous semiconductor solar cell

Info

Publication number
JPS57103370A
JPS57103370A JP55179029A JP17902980A JPS57103370A JP S57103370 A JPS57103370 A JP S57103370A JP 55179029 A JP55179029 A JP 55179029A JP 17902980 A JP17902980 A JP 17902980A JP S57103370 A JPS57103370 A JP S57103370A
Authority
JP
Japan
Prior art keywords
metal
substrate
alloy
solar cell
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55179029A
Other languages
Japanese (ja)
Other versions
JPH026235B2 (en
Inventor
Mitsuaki Yano
Wataru Yamamoto
Kenji Nakatani
Mitsuo Asano
Hiroshi Okaniwa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP55179029A priority Critical patent/JPS57103370A/en
Publication of JPS57103370A publication Critical patent/JPS57103370A/en
Publication of JPH026235B2 publication Critical patent/JPH026235B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To improve the photoelectric conversion efficiency and humidity-resisting property of the device by a method wherein the substrate side of a metal layer arranged between an insulating substrate and a thin amorphous film is formed of metal having excellent electroconductivity while the semiconductor side thereof is formed of metal having excellent electrical and mechanical junction. CONSTITUTION:A flexible macromolecular film such as polyimide resin, for instance, is formed into a substrate, and on this substrate a layer of single metal or alloy selected from Ag, Au, Pt, Cu, Al and Ni is evaporated in the thickness of 0.01-5mum. Next, metal selected from Mo, Cr, W, Fe, Ti and Ta or the alloy thereof or the alloy of stainless steel, etc. is formed into a layer 0.02-1mum thick and, subsequently, an amorphous Si film and an upper electrode are formed thereon sequentially, whereby the solar cell is prepared. By this method, the device can be made to have high photoelectric conversion efficiency without damaging the flexibility thereof and the deterioration of the characteristics thereof can be prevented through improvement of the humidity-resisting property thereof.
JP55179029A 1980-12-19 1980-12-19 Amorphous semiconductor solar cell Granted JPS57103370A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55179029A JPS57103370A (en) 1980-12-19 1980-12-19 Amorphous semiconductor solar cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55179029A JPS57103370A (en) 1980-12-19 1980-12-19 Amorphous semiconductor solar cell

Publications (2)

Publication Number Publication Date
JPS57103370A true JPS57103370A (en) 1982-06-26
JPH026235B2 JPH026235B2 (en) 1990-02-08

Family

ID=16058859

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55179029A Granted JPS57103370A (en) 1980-12-19 1980-12-19 Amorphous semiconductor solar cell

Country Status (1)

Country Link
JP (1) JPS57103370A (en)

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5898986A (en) * 1981-12-09 1983-06-13 Seiko Epson Corp Thin film solar battery
EP0103168A2 (en) * 1982-09-10 1984-03-21 Hitachi, Ltd. Amorphous silicon solar battery
JPS59108368A (en) * 1982-12-14 1984-06-22 Kanegafuchi Chem Ind Co Ltd Flexible thin film electromotive force device
JPS59195879A (en) * 1983-04-21 1984-11-07 Fuji Electric Co Ltd Amorphous silicon solar cell
JPS6015980A (en) * 1983-07-08 1985-01-26 Agency Of Ind Science & Technol Solar cell
JPS613471A (en) * 1984-06-15 1986-01-09 Kanegafuchi Chem Ind Co Ltd Semiconductor device
JPS6126268A (en) * 1984-07-16 1986-02-05 Kanegafuchi Chem Ind Co Ltd Heat-resistant amorphous silicon solar cell and manufacture thereof
JPS6191974A (en) * 1984-10-11 1986-05-10 Kanegafuchi Chem Ind Co Ltd Heat resisting multijunction type semiconductor element
JPS61174779A (en) * 1985-01-30 1986-08-06 Kanegafuchi Chem Ind Co Ltd Light converging type generator
JPS62133770A (en) * 1985-12-06 1987-06-16 Anritsu Corp Ohmic-junction device
EP0236629A2 (en) * 1986-03-06 1987-09-16 Kabushiki Kaisha Toshiba Driving circuit of a liquid crystal display device
JPS63100858U (en) * 1986-12-19 1988-06-30
JPS63138843U (en) * 1987-03-04 1988-09-13
JPS63503103A (en) * 1985-09-30 1988-11-10 鐘淵化学工業株式会社 Multi-junction semiconductor device
JPS63285972A (en) * 1987-05-19 1988-11-22 Fujitsu Ltd Bipolar transistor and manufacture thereof
JPH0462979A (en) * 1990-07-02 1992-02-27 Matsushita Electric Ind Co Ltd Electric element using hydrogenated amorphous silicon
JPH04355967A (en) * 1991-07-26 1992-12-09 Matsushita Electric Ind Co Ltd Semiconductor device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4948778B2 (en) 2005-03-30 2012-06-06 Ｔｄｋ株式会社 Solar cell and color adjustment method thereof

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5898986A (en) * 1981-12-09 1983-06-13 Seiko Epson Corp Thin film solar battery
EP0103168A3 (en) * 1982-09-10 1986-07-02 Hitachi, Ltd. Amorphous silicon solar battery
EP0103168A2 (en) * 1982-09-10 1984-03-21 Hitachi, Ltd. Amorphous silicon solar battery
JPS59108368A (en) * 1982-12-14 1984-06-22 Kanegafuchi Chem Ind Co Ltd Flexible thin film electromotive force device
JPS59195879A (en) * 1983-04-21 1984-11-07 Fuji Electric Co Ltd Amorphous silicon solar cell
JPS6015980A (en) * 1983-07-08 1985-01-26 Agency Of Ind Science & Technol Solar cell
JPS613471A (en) * 1984-06-15 1986-01-09 Kanegafuchi Chem Ind Co Ltd Semiconductor device
JPS6126268A (en) * 1984-07-16 1986-02-05 Kanegafuchi Chem Ind Co Ltd Heat-resistant amorphous silicon solar cell and manufacture thereof
JPS6191974A (en) * 1984-10-11 1986-05-10 Kanegafuchi Chem Ind Co Ltd Heat resisting multijunction type semiconductor element
JPS61174779A (en) * 1985-01-30 1986-08-06 Kanegafuchi Chem Ind Co Ltd Light converging type generator
JPS63503103A (en) * 1985-09-30 1988-11-10 鐘淵化学工業株式会社 Multi-junction semiconductor device
JPS62133770A (en) * 1985-12-06 1987-06-16 Anritsu Corp Ohmic-junction device
EP0236629A2 (en) * 1986-03-06 1987-09-16 Kabushiki Kaisha Toshiba Driving circuit of a liquid crystal display device
JPS63100858U (en) * 1986-12-19 1988-06-30
JPS63138843U (en) * 1987-03-04 1988-09-13
JPS63285972A (en) * 1987-05-19 1988-11-22 Fujitsu Ltd Bipolar transistor and manufacture thereof
JPH0462979A (en) * 1990-07-02 1992-02-27 Matsushita Electric Ind Co Ltd Electric element using hydrogenated amorphous silicon
JPH04355967A (en) * 1991-07-26 1992-12-09 Matsushita Electric Ind Co Ltd Semiconductor device

Also Published As

Publication number Publication date
JPH026235B2 (en) 1990-02-08

Similar Documents

Publication Publication Date Title
JPS57103370A (en) Amorphous semiconductor solar cell
US3038952A (en) Method of making a solar cell panel
JP3486543B2 (en) Method of depositing cuprous oxide film and method of manufacturing semiconductor device using the method of depositing cuprous oxide film
JPS59104184A (en) Solar battery
JPS59208789A (en) Solar cell
JPS5739189A (en) Stainless steel plated with noble metal
JPS56100486A (en) Photoelectric conversion element
JPS56129381A (en) Photoidentifying device
JPS5975575A (en) Molten carbonate type fuel cell
JPS5759369A (en) Conductor coated heat resisting silver
JPS62113483A (en) Thin-film solar cell
JPS57211279A (en) Amorphous si solar cell
JPS5669875A (en) Amorphous semiconductor solar cell
JPS5768040A (en) Electrode structure for semiconductor device
JPS56135927A (en) Forming method for electrode of semiconductor device
JPH0458710B2 (en)
GB1526823A (en) Photovoltaic devices
JPS57126187A (en) Reluctance element
JPS59167057A (en) Silicon semiconductor electrode
JPS5670675A (en) Manufacture of photoelectric converter
JPS5690536A (en) Semiconductor device
JPS56110230A (en) Forming method of electrode on semiconductor device
JPS5419690A (en) Electrode of semiconductor devices
JPS56160078A (en) Forming method of electrode of solar battery
JPS56107564A (en) Amorphous silicon thin film element