JPS56135927A - Forming method for electrode of semiconductor device - Google Patents

Forming method for electrode of semiconductor device

Info

Publication number
JPS56135927A
JPS56135927A JP4000780A JP4000780A JPS56135927A JP S56135927 A JPS56135927 A JP S56135927A JP 4000780 A JP4000780 A JP 4000780A JP 4000780 A JP4000780 A JP 4000780A JP S56135927 A JPS56135927 A JP S56135927A
Authority
JP
Japan
Prior art keywords
alloy
magnetron
nonmagnetic
metal layer
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4000780A
Other languages
Japanese (ja)
Inventor
Masaru Wakatabe
Akimitsu Kawaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shindengen Electric Manufacturing Co Ltd
Original Assignee
Shindengen Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shindengen Electric Manufacturing Co Ltd filed Critical Shindengen Electric Manufacturing Co Ltd
Priority to JP4000780A priority Critical patent/JPS56135927A/en
Publication of JPS56135927A publication Critical patent/JPS56135927A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
    • H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by physical means, e.g. sputtering, evaporation

Abstract

PURPOSE:To form the electrode excellent in mechanical strength with good workability by connecting nonmagnetic Ni alloy by the magnetron-spatter method on to a semiconductor substrate directly or through the intermediary of a required metal layer. CONSTITUTION:The metal layer 7 is formed by evaporating Cr in vacuum on the semiconductor substrate 6 whereon P-N junction is formed beforehand and then the nonmagnetic alloy such as Ni-Cu alloy containing Cu of 25wt% is evaporated on the metal layer 7 by the magnetron-spatter method, whereby an alloy layer 8 is formed. By this constitution, magnetron spattering enabling high-speed evaporation, with Ni being made nonmagnetic, becomes possible and thereby the workability is improved. In addition, Ni-Sn alloy (Sn is 30% or more), Ni-Ti alloy (Ti is 10% or more) and Ni-Pt alloy (Pt is 40% or more) are usable for this purpose.
JP4000780A 1980-03-28 1980-03-28 Forming method for electrode of semiconductor device Pending JPS56135927A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4000780A JPS56135927A (en) 1980-03-28 1980-03-28 Forming method for electrode of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4000780A JPS56135927A (en) 1980-03-28 1980-03-28 Forming method for electrode of semiconductor device

Publications (1)

Publication Number Publication Date
JPS56135927A true JPS56135927A (en) 1981-10-23

Family

ID=12568845

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4000780A Pending JPS56135927A (en) 1980-03-28 1980-03-28 Forming method for electrode of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56135927A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4965656A (en) * 1986-06-06 1990-10-23 Hitachi, Ltd. Semiconductor device
JP2006310814A (en) * 2005-03-29 2006-11-09 Hitachi Metals Ltd Thin film wiring layer

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56110230A (en) * 1980-02-06 1981-09-01 Toshiba Corp Forming method of electrode on semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56110230A (en) * 1980-02-06 1981-09-01 Toshiba Corp Forming method of electrode on semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4965656A (en) * 1986-06-06 1990-10-23 Hitachi, Ltd. Semiconductor device
JP2006310814A (en) * 2005-03-29 2006-11-09 Hitachi Metals Ltd Thin film wiring layer

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