JPS5643721A - Sputtering device - Google Patents

Sputtering device

Info

Publication number
JPS5643721A
JPS5643721A JP11900379A JP11900379A JPS5643721A JP S5643721 A JPS5643721 A JP S5643721A JP 11900379 A JP11900379 A JP 11900379A JP 11900379 A JP11900379 A JP 11900379A JP S5643721 A JPS5643721 A JP S5643721A
Authority
JP
Japan
Prior art keywords
electrode
etching
electrode forming
opposing
forming conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11900379A
Other languages
Japanese (ja)
Inventor
Toshihiko Ono
Ichiro Fujita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP11900379A priority Critical patent/JPS5643721A/en
Publication of JPS5643721A publication Critical patent/JPS5643721A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

PURPOSE:To obtain a sputter-etching device, with which a stable electrode without an admixture of stainless is formed, by a method wherein an etching is performed using an opposing electrode consisted of an element, one of constituting elements of an electrode forming conductor. CONSTITUTION:In plasma gas filled space 1, a cathode 2 having a substrate to be processed and attached is provided, an anode 4 is provided at the point opposing to the processing substrate 3 and a target metal substance 5 is provided on the surface of the anode 4. When an alloy component of aluminum and silicone is coated for use as an electrode forming conductor, an etching processing is performed by the electrode consisted of opposing electrodes 2 and 4 which are made of single metal such as aluminum or silicone, one of electrode forming conductor constituting elements, or alloy metal of said two metals. As a result, contamination due to stainless during a sputter etching is eliminated and an electrically and mechanically excellent electrode forming basic layer can be obtained.
JP11900379A 1979-09-17 1979-09-17 Sputtering device Pending JPS5643721A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11900379A JPS5643721A (en) 1979-09-17 1979-09-17 Sputtering device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11900379A JPS5643721A (en) 1979-09-17 1979-09-17 Sputtering device

Publications (1)

Publication Number Publication Date
JPS5643721A true JPS5643721A (en) 1981-04-22

Family

ID=14750583

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11900379A Pending JPS5643721A (en) 1979-09-17 1979-09-17 Sputtering device

Country Status (1)

Country Link
JP (1) JPS5643721A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61199077A (en) * 1985-02-28 1986-09-03 Anelva Corp Surface treating apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61199077A (en) * 1985-02-28 1986-09-03 Anelva Corp Surface treating apparatus

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