JPS54156480A - Semiconductor element of greater current capacity - Google Patents
Semiconductor element of greater current capacityInfo
- Publication number
- JPS54156480A JPS54156480A JP6533378A JP6533378A JPS54156480A JP S54156480 A JPS54156480 A JP S54156480A JP 6533378 A JP6533378 A JP 6533378A JP 6533378 A JP6533378 A JP 6533378A JP S54156480 A JPS54156480 A JP S54156480A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- thin
- alloyed
- current capacity
- constitution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: T0 establish sufficiently thin wafer of greater diameter, for low dielectric strength and greater current capacity, by giving the role of mechanical reinforcement through thin conduction region and thick other parts for the semiconductor wafer.
CONSTITUTION: The N type Si substrat 85mm in diameter and 350 μm in thickness is selectively etched, to form the part 112 2mm in width and the part 111 100mm in depth are formed at the circumference. Next, the P layer 120, N+ layer 130 100 μm and 40 μm respectively in diffusion depth are formed, the anode electrode 140 is alloyed by clipping the Al thin layer at the P layer, and the cathode electrode is alloyed is alloyed at the N+ alyer. With this constitution, the circumference 112 increases the mechanical strength, and even if the conduction region 111 is thin, Si substrate is not cracked under manufactureing process, allowing to manufacture high yield rate.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6533378A JPS54156480A (en) | 1978-05-30 | 1978-05-30 | Semiconductor element of greater current capacity |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6533378A JPS54156480A (en) | 1978-05-30 | 1978-05-30 | Semiconductor element of greater current capacity |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54156480A true JPS54156480A (en) | 1979-12-10 |
Family
ID=13283880
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6533378A Pending JPS54156480A (en) | 1978-05-30 | 1978-05-30 | Semiconductor element of greater current capacity |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54156480A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2769640A1 (en) * | 1997-10-15 | 1999-04-16 | Sgs Thomson Microelectronics | IMPROVING THE MECHANICAL STRENGTH OF A MONOCRYSTALLINE SILICON WAFER |
FR2771108A1 (en) * | 1997-11-18 | 1999-05-21 | Sgs Thomson Microelectronics | Single crystal silicon wafer has a cell pattern of thin etched active zones |
-
1978
- 1978-05-30 JP JP6533378A patent/JPS54156480A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2769640A1 (en) * | 1997-10-15 | 1999-04-16 | Sgs Thomson Microelectronics | IMPROVING THE MECHANICAL STRENGTH OF A MONOCRYSTALLINE SILICON WAFER |
EP0911431A1 (en) * | 1997-10-15 | 1999-04-28 | STMicroelectronics SA | Single crystal silicon wafer with increased mechanical resistance |
US6580151B2 (en) | 1997-10-15 | 2003-06-17 | Stmicroelectronics S.A. | Mechanical resistance of a single-crystal silicon wafer |
FR2771108A1 (en) * | 1997-11-18 | 1999-05-21 | Sgs Thomson Microelectronics | Single crystal silicon wafer has a cell pattern of thin etched active zones |
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