JPS54156480A - Semiconductor element of greater current capacity - Google Patents

Semiconductor element of greater current capacity

Info

Publication number
JPS54156480A
JPS54156480A JP6533378A JP6533378A JPS54156480A JP S54156480 A JPS54156480 A JP S54156480A JP 6533378 A JP6533378 A JP 6533378A JP 6533378 A JP6533378 A JP 6533378A JP S54156480 A JPS54156480 A JP S54156480A
Authority
JP
Japan
Prior art keywords
layer
thin
alloyed
current capacity
constitution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6533378A
Other languages
Japanese (ja)
Inventor
Akira Kawakami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP6533378A priority Critical patent/JPS54156480A/en
Publication of JPS54156480A publication Critical patent/JPS54156480A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: T0 establish sufficiently thin wafer of greater diameter, for low dielectric strength and greater current capacity, by giving the role of mechanical reinforcement through thin conduction region and thick other parts for the semiconductor wafer.
CONSTITUTION: The N type Si substrat 85mm in diameter and 350 μm in thickness is selectively etched, to form the part 112 2mm in width and the part 111 100mm in depth are formed at the circumference. Next, the P layer 120, N+ layer 130 100 μm and 40 μm respectively in diffusion depth are formed, the anode electrode 140 is alloyed by clipping the Al thin layer at the P layer, and the cathode electrode is alloyed is alloyed at the N+ alyer. With this constitution, the circumference 112 increases the mechanical strength, and even if the conduction region 111 is thin, Si substrate is not cracked under manufactureing process, allowing to manufacture high yield rate.
COPYRIGHT: (C)1979,JPO&Japio
JP6533378A 1978-05-30 1978-05-30 Semiconductor element of greater current capacity Pending JPS54156480A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6533378A JPS54156480A (en) 1978-05-30 1978-05-30 Semiconductor element of greater current capacity

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6533378A JPS54156480A (en) 1978-05-30 1978-05-30 Semiconductor element of greater current capacity

Publications (1)

Publication Number Publication Date
JPS54156480A true JPS54156480A (en) 1979-12-10

Family

ID=13283880

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6533378A Pending JPS54156480A (en) 1978-05-30 1978-05-30 Semiconductor element of greater current capacity

Country Status (1)

Country Link
JP (1) JPS54156480A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2769640A1 (en) * 1997-10-15 1999-04-16 Sgs Thomson Microelectronics IMPROVING THE MECHANICAL STRENGTH OF A MONOCRYSTALLINE SILICON WAFER
FR2771108A1 (en) * 1997-11-18 1999-05-21 Sgs Thomson Microelectronics Single crystal silicon wafer has a cell pattern of thin etched active zones

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2769640A1 (en) * 1997-10-15 1999-04-16 Sgs Thomson Microelectronics IMPROVING THE MECHANICAL STRENGTH OF A MONOCRYSTALLINE SILICON WAFER
EP0911431A1 (en) * 1997-10-15 1999-04-28 STMicroelectronics SA Single crystal silicon wafer with increased mechanical resistance
US6580151B2 (en) 1997-10-15 2003-06-17 Stmicroelectronics S.A. Mechanical resistance of a single-crystal silicon wafer
FR2771108A1 (en) * 1997-11-18 1999-05-21 Sgs Thomson Microelectronics Single crystal silicon wafer has a cell pattern of thin etched active zones

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