JPS56132737A - Cold electron discharge cathode - Google Patents

Cold electron discharge cathode

Info

Publication number
JPS56132737A
JPS56132737A JP3492380A JP3492380A JPS56132737A JP S56132737 A JPS56132737 A JP S56132737A JP 3492380 A JP3492380 A JP 3492380A JP 3492380 A JP3492380 A JP 3492380A JP S56132737 A JPS56132737 A JP S56132737A
Authority
JP
Japan
Prior art keywords
type semiconductor
semiconductor layer
face
semiconductor substrate
electron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3492380A
Other languages
Japanese (ja)
Other versions
JPH0139616B2 (en
Inventor
Mitsutaka Takemura
Katsuo Hara
Hideo Takahashi
Sakio Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hamamatsu TV Co Ltd
Original Assignee
Hamamatsu TV Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu TV Co Ltd filed Critical Hamamatsu TV Co Ltd
Priority to JP3492380A priority Critical patent/JPS56132737A/en
Publication of JPS56132737A publication Critical patent/JPS56132737A/en
Publication of JPH0139616B2 publication Critical patent/JPH0139616B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/308—Semiconductor cathodes, e.g. cathodes with PN junction layers

Landscapes

  • Cold Cathode And The Manufacture (AREA)

Abstract

PURPOSE:To achieve high electron emission efficiency, by increasing the ratio of electron flow injected from N type semiconductor substrate to P type semiconductor layer. CONSTITUTION:P type semiconductor layer 22 of low resistance is formed on one surface of high resistance N type semiconductor substrate 21 while an ohmic electrode 25 is formed on the back face. An ohmic electrode 24 is formed on the other side face of P type semiconductor layer 22 than its face jointing with N type semiconductor substrate 21 while a thin layer 23 of alkali metal is formed on another portion of the this face. Then forward bias voltage is applied between said ohmic electrodes 24, 25. The majority of the bias current is injected as the electron flow into P type semiconductor layer 22 to increase the electron to be discharged into the vacuum.
JP3492380A 1980-03-19 1980-03-19 Cold electron discharge cathode Granted JPS56132737A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3492380A JPS56132737A (en) 1980-03-19 1980-03-19 Cold electron discharge cathode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3492380A JPS56132737A (en) 1980-03-19 1980-03-19 Cold electron discharge cathode

Publications (2)

Publication Number Publication Date
JPS56132737A true JPS56132737A (en) 1981-10-17
JPH0139616B2 JPH0139616B2 (en) 1989-08-22

Family

ID=12427725

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3492380A Granted JPS56132737A (en) 1980-03-19 1980-03-19 Cold electron discharge cathode

Country Status (1)

Country Link
JP (1) JPS56132737A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62272439A (en) * 1986-05-20 1987-11-26 Canon Inc Electron emitting device
JPH01146236A (en) * 1987-12-03 1989-06-08 Canon Inc Electron beam generator

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5430274A (en) * 1977-08-10 1979-03-06 Koyo Sangyo Co Gypsum laminating board*and its making method
JPS5446931A (en) * 1977-09-17 1979-04-13 Truetzschler & Co Moving flat for comber

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5430274A (en) * 1977-08-10 1979-03-06 Koyo Sangyo Co Gypsum laminating board*and its making method
JPS5446931A (en) * 1977-09-17 1979-04-13 Truetzschler & Co Moving flat for comber

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62272439A (en) * 1986-05-20 1987-11-26 Canon Inc Electron emitting device
JPH01146236A (en) * 1987-12-03 1989-06-08 Canon Inc Electron beam generator

Also Published As

Publication number Publication date
JPH0139616B2 (en) 1989-08-22

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