JPS57207381A - High-speed diode - Google Patents
High-speed diodeInfo
- Publication number
- JPS57207381A JPS57207381A JP9248681A JP9248681A JPS57207381A JP S57207381 A JPS57207381 A JP S57207381A JP 9248681 A JP9248681 A JP 9248681A JP 9248681 A JP9248681 A JP 9248681A JP S57207381 A JPS57207381 A JP S57207381A
- Authority
- JP
- Japan
- Prior art keywords
- junction
- region
- diode
- main
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000002347 injection Methods 0.000 abstract 2
- 239000007924 injection Substances 0.000 abstract 2
- 238000011084 recovery Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/868—PIN diodes
Abstract
PURPOSE:To shorten inverse recovery time by introducing a life time killer only to a main diode region in junction structure in which main and auxiliary diode regions are formed into one Si substrate, the area of the main diode is made smaller than both anode and cathode electrodes and the efficiency of injection of the main diode junction is made higher. CONSTITUTION:A main diode region 1 is formed in such a manner that an N<+> type layer 6, an Ni-type layer 3, a P<+> type layer 4 and the anode electrode 7 are laminated and shaped onto a supporting electrode consisting of the cathode electrode 8. An auxiliary diode region 2 is molded in such a manner that the side surface is contacted with the region 1, the lowermost layer 6 takes N type on the same electrode 8 and completely the same layers as the region 1 are deposited in sections upper than the layer 6, and a P<+>-Ni-N<+> junction is formed as the main diode 1 and a P<+>-Ni-N junction as the auxiliary diode 2. The area of the P<+>-Ni-N<+> junction is formed at value smaller than both the electrodes 7, 8, and the efficiency of injection of the P<+>-Ni-N junction is made lower than the P<+>-Ni-N<+> junction. The life time killer, such as Au, Pt, etc. is injected previously only into the region 1.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9248681A JPH0234188B2 (en) | 1981-06-16 | 1981-06-16 | KOSOKUDAIOODO |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9248681A JPH0234188B2 (en) | 1981-06-16 | 1981-06-16 | KOSOKUDAIOODO |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57207381A true JPS57207381A (en) | 1982-12-20 |
JPH0234188B2 JPH0234188B2 (en) | 1990-08-01 |
Family
ID=14055627
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9248681A Expired - Lifetime JPH0234188B2 (en) | 1981-06-16 | 1981-06-16 | KOSOKUDAIOODO |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0234188B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3442644A1 (en) * | 1983-11-29 | 1985-06-05 | Mitsubishi Denki K.K., Tokio/Tokyo | Semiconductor component |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05236878A (en) * | 1992-02-27 | 1993-09-17 | Shikishima Seipan Kk | Filling and cake using the same |
-
1981
- 1981-06-16 JP JP9248681A patent/JPH0234188B2/en not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3442644A1 (en) * | 1983-11-29 | 1985-06-05 | Mitsubishi Denki K.K., Tokio/Tokyo | Semiconductor component |
Also Published As
Publication number | Publication date |
---|---|
JPH0234188B2 (en) | 1990-08-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5598858A (en) | Gate turn-off thyristor | |
JPS57207381A (en) | High-speed diode | |
JPS57178369A (en) | Gate turnoff thyristor | |
EP0157207A3 (en) | Gate turn-off thyristor | |
JPS56114384A (en) | Solar battery | |
JPS5596678A (en) | Reverse conducting thyristor | |
JPS57166078A (en) | Semiconductor device | |
JPS56103466A (en) | Thyristor | |
JPS6489569A (en) | Solar cell element | |
JPS5494288A (en) | 2 terminal reverse conducting thyristor | |
JPS56104467A (en) | Reverse conducting thyristor | |
JPS5539667A (en) | Turn off thyristor | |
JPS5678174A (en) | Variable capacity diode | |
JPS56101779A (en) | Schottky barrier diode | |
JPS6441278A (en) | Manufacture of thin film photovoltaic element | |
JPS56110288A (en) | Semiconductor laser element | |
JPS5750480A (en) | Constant voltage diode | |
JPS57126191A (en) | Semiconductor light emitting element | |
JPS54143080A (en) | Semiconductor device | |
JPS54124991A (en) | Semiconductor luminous unit | |
JPS57112091A (en) | Semiconductor luminescent device | |
JPS56103471A (en) | Semiconductor device | |
JPS55165675A (en) | Thyristor | |
JPS56132737A (en) | Cold electron discharge cathode | |
JPS56161688A (en) | Semiconductor laser |