JPS56161688A - Semiconductor laser - Google Patents

Semiconductor laser

Info

Publication number
JPS56161688A
JPS56161688A JP6555580A JP6555580A JPS56161688A JP S56161688 A JPS56161688 A JP S56161688A JP 6555580 A JP6555580 A JP 6555580A JP 6555580 A JP6555580 A JP 6555580A JP S56161688 A JPS56161688 A JP S56161688A
Authority
JP
Japan
Prior art keywords
layer
active layer
superposed
current
decrease
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6555580A
Other languages
Japanese (ja)
Inventor
Takashi Sugino
Kunio Ito
Masaru Wada
Yuichi Shimizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP6555580A priority Critical patent/JPS56161688A/en
Priority to CA000368427A priority patent/CA1154852A/en
Priority to US06/224,821 priority patent/US4392227A/en
Priority to EP81100192A priority patent/EP0032401B1/en
Priority to DE8181100192T priority patent/DE3171754D1/en
Publication of JPS56161688A publication Critical patent/JPS56161688A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2238—Buried stripe structure with a terraced structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3201—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures incorporating bulkstrain effects, e.g. strain compensation, strain related to polarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm

Abstract

PURPOSE:To improve the injection efficiency and to decrease the threshold current of a semiconductor laser by reducing the thickness of a part of the active layer thinner than the other part by bending the part of the layer and forming a current injection layer at the top of the part. CONSTITUTION:A step is formed at an N type substrate 17, N type clad layer 18 and an active layer 19 are superposed, and a thickness of the film is partly reduced at the bent part B. A P type clad layer 20 is superposed, an oblique surface is disposed on the part B, an electrode forming layer 21 is thickly laminated, and the surface is flattened. An insulating mask 22 is formed, the center is slightly displaced from the direct above of the part B toward the lower part of the step, P type impurity is selectively diffused to reach the layer 20. The mask 22 is removed, electrodes 24, 26 are attached, are cleaved, and are mounted on a copper block. Since the thinnest part of the active layer can be injected with current according to the configuration, it can improve the efficiency and can decrease the threshold current.
JP6555580A 1980-01-14 1980-05-16 Semiconductor laser Pending JPS56161688A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP6555580A JPS56161688A (en) 1980-05-16 1980-05-16 Semiconductor laser
CA000368427A CA1154852A (en) 1980-01-14 1981-01-13 Semiconductor laser
US06/224,821 US4392227A (en) 1980-01-14 1981-01-13 Terraced substrate semiconductor laser
EP81100192A EP0032401B1 (en) 1980-01-14 1981-01-13 Semiconductor laser
DE8181100192T DE3171754D1 (en) 1980-01-14 1981-01-13 Semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6555580A JPS56161688A (en) 1980-05-16 1980-05-16 Semiconductor laser

Publications (1)

Publication Number Publication Date
JPS56161688A true JPS56161688A (en) 1981-12-12

Family

ID=13290360

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6555580A Pending JPS56161688A (en) 1980-01-14 1980-05-16 Semiconductor laser

Country Status (1)

Country Link
JP (1) JPS56161688A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008064982A (en) * 2006-09-06 2008-03-21 Yamaha Corp Electronic musical instrument and program

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS523392A (en) * 1975-06-23 1977-01-11 Xerox Corp Hetero juntion diode laser and method of producing same

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS523392A (en) * 1975-06-23 1977-01-11 Xerox Corp Hetero juntion diode laser and method of producing same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008064982A (en) * 2006-09-06 2008-03-21 Yamaha Corp Electronic musical instrument and program

Similar Documents

Publication Publication Date Title
EP0307844A3 (en) Semiconductor integrated circuit having interconnection with improved design flexibility
JPS56161688A (en) Semiconductor laser
JPS5739574A (en) Semiconductor device
JPS57172765A (en) Electrostatic induction thyristor
JPS575384A (en) Semiconductor laser device
JPS5739571A (en) Constant current diode
JPS6467970A (en) Thin film transistor
JPS5763885A (en) Semiconductor laser device
JPS5661175A (en) Thin-film solar cell
JPS56103466A (en) Thyristor
JPS56161687A (en) Semiconductor laser
JPS5766667A (en) Semiconductor device
JPS55153385A (en) Current squeezing type semiconductor device
JPS57207381A (en) High-speed diode
JPS57132387A (en) Semiconductor laser device
JPS5650592A (en) Semiconductor laser device
JPS57143888A (en) Electrode structure of semiconductor light emitting device
JPS5736871A (en) Semiconductor device
JPS6142878B2 (en)
JPS5790976A (en) Thyristor
JPS56110285A (en) Semiconductor laser
JPS5693387A (en) Semiconductor laser device
JPS575366A (en) Semiconductor device and manufacture thereof
JPS5756969A (en) High withstand voltage type semiconductor device
JPS5727095A (en) Semiconductor light emitting device