JPS5530843A - Anode oxidizing method - Google Patents

Anode oxidizing method

Info

Publication number
JPS5530843A
JPS5530843A JP10388178A JP10388178A JPS5530843A JP S5530843 A JPS5530843 A JP S5530843A JP 10388178 A JP10388178 A JP 10388178A JP 10388178 A JP10388178 A JP 10388178A JP S5530843 A JPS5530843 A JP S5530843A
Authority
JP
Japan
Prior art keywords
film
semiconductor
anode
supporter
iii
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10388178A
Other languages
Japanese (ja)
Other versions
JPS5640494B2 (en
Inventor
Hisao Saito
Keiko Suzuki
Yoshiharu Horikoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP10388178A priority Critical patent/JPS5530843A/en
Publication of JPS5530843A publication Critical patent/JPS5530843A/en
Publication of JPS5640494B2 publication Critical patent/JPS5640494B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrochemical Coating By Surface Reaction (AREA)
  • Die Bonding (AREA)

Abstract

PURPOSE: To form a uniform, well insulated anode oxidized film with high reproducibility without contaminating a semiconductor by supporting a III-V group compound semiconductor on a supporter without using any adhesive, then giving an anode oxidation to the surface of the semiconductor.
CONSTITUTION: A two-layered film 2 made by vapor coating Cr and Au respectively, is formed on an insulation base board such as glass or ceramics, and on this film, an "In" film 3 is selectively formed by means of an electroplating to make into a semiconductor supporter. An metallic anode film 6, for example an AuGeNi alloy or AuZn alloy is covered on the reverse side of the III-V group compound semiconductor 5 such as GaAs and InP, and the film 6 is forced to adhere on the "In" film 3 of the supporter. Then an anode oxidized film is grown on the semiconductor 5 by treating it in an electrolyte 8 with the semiconductor 5 as an anode and a platinum plate as a cathode. Reproducibility improves if the exposed surface of the two-layered film 2 is covered with SiO2. By so doing, contamination due to a conductive adhesive is eliminated, thus obtaining a high quality anode oxidezed film.
COPYRIGHT: (C)1980,JPO&Japio
JP10388178A 1978-08-28 1978-08-28 Anode oxidizing method Granted JPS5530843A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10388178A JPS5530843A (en) 1978-08-28 1978-08-28 Anode oxidizing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10388178A JPS5530843A (en) 1978-08-28 1978-08-28 Anode oxidizing method

Publications (2)

Publication Number Publication Date
JPS5530843A true JPS5530843A (en) 1980-03-04
JPS5640494B2 JPS5640494B2 (en) 1981-09-21

Family

ID=14365768

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10388178A Granted JPS5530843A (en) 1978-08-28 1978-08-28 Anode oxidizing method

Country Status (1)

Country Link
JP (1) JPS5530843A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60175106U (en) * 1984-04-28 1985-11-20 アキレス株式会社 shoe insole

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60175106U (en) * 1984-04-28 1985-11-20 アキレス株式会社 shoe insole

Also Published As

Publication number Publication date
JPS5640494B2 (en) 1981-09-21

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