JPS5723221A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5723221A
JPS5723221A JP9788280A JP9788280A JPS5723221A JP S5723221 A JPS5723221 A JP S5723221A JP 9788280 A JP9788280 A JP 9788280A JP 9788280 A JP9788280 A JP 9788280A JP S5723221 A JPS5723221 A JP S5723221A
Authority
JP
Japan
Prior art keywords
substrate
layer
metal layer
metal
implanted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9788280A
Other languages
Japanese (ja)
Inventor
Mitsutoshi Hibino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP9788280A priority Critical patent/JPS5723221A/en
Publication of JPS5723221A publication Critical patent/JPS5723221A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To eliminate the pollution of an alkaline metal as well as to obtain the device having ohmic contact by a method wherein a metal layer is deposited, using a dry type method, on the surface of the reverse side of the substrate surface having an active region and the impurity ion of the same conductive type as the substrate is implanted on the metal layer. CONSTITUTION:An Ni layer 6 is provided on the surface of the reverse side of the surface of the N type Si substrate 3, having a P-N junction, an electrode and a wiring, by performing evaporation, a P ion is implanted and a sintering is performed at the approximate temperature of 600 deg.C. Subsequently, an Ni layer 7 and a metal layer 8 are evaporated and sintered. According to this constitution, an N<+> region is formed on the boundary of the Si substrate and the Ni layer 6, and an excellent ohmic contact can be obtained. Besides, as the metal layer is formed by evaporation without using a plating method, the substrate 3 is not polluted by the alkaline metal such as Na, K and the like, thereby enabling to prevent the lowering of the reliability of the device.
JP9788280A 1980-07-16 1980-07-16 Manufacture of semiconductor device Pending JPS5723221A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9788280A JPS5723221A (en) 1980-07-16 1980-07-16 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9788280A JPS5723221A (en) 1980-07-16 1980-07-16 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5723221A true JPS5723221A (en) 1982-02-06

Family

ID=14204112

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9788280A Pending JPS5723221A (en) 1980-07-16 1980-07-16 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5723221A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007282977A (en) * 2006-04-19 2007-11-01 Tiger Vacuum Bottle Co Ltd Electric rice cooker

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5024080A (en) * 1973-06-29 1975-03-14
JPS5258463A (en) * 1975-11-10 1977-05-13 Hitachi Ltd Production of semiconductor device
JPS5443352A (en) * 1977-09-13 1979-04-05 Mitsubishi Electric Corp Hot water feeder

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5024080A (en) * 1973-06-29 1975-03-14
JPS5258463A (en) * 1975-11-10 1977-05-13 Hitachi Ltd Production of semiconductor device
JPS5443352A (en) * 1977-09-13 1979-04-05 Mitsubishi Electric Corp Hot water feeder

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007282977A (en) * 2006-04-19 2007-11-01 Tiger Vacuum Bottle Co Ltd Electric rice cooker

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