JPS5562765A - Method of fabricating semiconductor device - Google Patents

Method of fabricating semiconductor device

Info

Publication number
JPS5562765A
JPS5562765A JP13539978A JP13539978A JPS5562765A JP S5562765 A JPS5562765 A JP S5562765A JP 13539978 A JP13539978 A JP 13539978A JP 13539978 A JP13539978 A JP 13539978A JP S5562765 A JPS5562765 A JP S5562765A
Authority
JP
Japan
Prior art keywords
layer
substrate
gold
type
diffused
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13539978A
Other languages
Japanese (ja)
Inventor
Yoshimi Tsuchiya
Koki Namita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP13539978A priority Critical patent/JPS5562765A/en
Publication of JPS5562765A publication Critical patent/JPS5562765A/en
Pending legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To improve the switching speed of a semiconductor device by forming an ion implanted layer not affected by conductivity type at predetermined portion in a semiconductor substrate and collecting diffused gold in the layer.
CONSTITUTION: A P-type impurity is adhered at 4 through an opening 3 of the insulator film 2 of an N-type substrate 1, argon (Ar) ion or the like is implanted without adverse effect to its conductivity to thereby form an ion implanted layer 8 in parallel with the main surface in predetermined depth. It is diffused from the layer 4 by heat treatment, a P-type base layer 5 is formed so as not to reach the layer 8. Then, phosphorus is diffused in part of the layer 5 to thereby form an N- type emitter layer 6 thereat, gold 7 is deposited on the substrate 1. Then, it is thermally treated to thereby diffuse gold in the layer 7 into the entire substrate. Finally, electrodes are provided on the substrate 1 and the layers 5, 6. According to this configuration, the gold is collected greater in the layer 8 due to infinitesimal crystal strain residued thereat even after the heat treatment so that the life of minority carrier is short in the layer 8. Accordingly, in operation, the life of the minority carrier of the collector layer is sufficiently short to thereby improve the switching speed of the semiconductor device.
COPYRIGHT: (C)1980,JPO&Japio
JP13539978A 1978-11-01 1978-11-01 Method of fabricating semiconductor device Pending JPS5562765A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13539978A JPS5562765A (en) 1978-11-01 1978-11-01 Method of fabricating semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13539978A JPS5562765A (en) 1978-11-01 1978-11-01 Method of fabricating semiconductor device

Publications (1)

Publication Number Publication Date
JPS5562765A true JPS5562765A (en) 1980-05-12

Family

ID=15150798

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13539978A Pending JPS5562765A (en) 1978-11-01 1978-11-01 Method of fabricating semiconductor device

Country Status (1)

Country Link
JP (1) JPS5562765A (en)

Similar Documents

Publication Publication Date Title
JPS54140875A (en) Semiconductor device
JPS5482175A (en) Field effect transistor and its manufacture
JPS5562765A (en) Method of fabricating semiconductor device
JPS5312289A (en) Production of semiconductor device
JPS5587429A (en) Manufacture of semiconductor device
JPS54149465A (en) Production of semiconductor device
JPS5339081A (en) Semiconductor device
JPS5518010A (en) Semiconductor device
JPS54101666A (en) Semiconductor device
JPS5538082A (en) Formation for buried layer of semiconductor device
JPS5578571A (en) Manufacture of semiconductor device
KR930010826B1 (en) Manufacturing method of bipolar device
JPS5586152A (en) Manufacture of semiconductor device
JPS53126871A (en) Diode
JPS5563879A (en) Semiconductor device
JPS5568650A (en) Manufacturing method of semiconductor device
JPS5463689A (en) Production of semiconductor substrate for solar battery
JPS53131765A (en) Production of semiconductor device
JPS53106582A (en) Semiconductor device
JPS5489477A (en) Production of semiconductor device
JPS5496975A (en) Semiconductor device
JPS54158875A (en) Semiconductor device
JPS54128291A (en) Manufacture of semiconductor device
JPS5723221A (en) Manufacture of semiconductor device
JPS56122162A (en) Semiconductor device and manufacture thereof