JPS5687663A - Thin film forming method - Google Patents
Thin film forming methodInfo
- Publication number
- JPS5687663A JPS5687663A JP16375679A JP16375679A JPS5687663A JP S5687663 A JPS5687663 A JP S5687663A JP 16375679 A JP16375679 A JP 16375679A JP 16375679 A JP16375679 A JP 16375679A JP S5687663 A JPS5687663 A JP S5687663A
- Authority
- JP
- Japan
- Prior art keywords
- target
- thin film
- electrode
- film forming
- forming method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
PURPOSE:To stabilize the electric resistance of an electrically conductive thin film in the formation of the film by fixing a target on an electrode with a different metal layer inbetween to prevent the electrode material from diffusing in the target material. CONSTITUTION:Electrode 1 of copper of the like is plated with third metal 3 such as Ni, and target 2 of tin or the like is attached to metal 3. By forming an electrically conductive thin film on a glass surface or the like by the ion bombardment of this target 2, the electric resistance of the thin film is stabilized to smoothen the work. In addition, electrode material 1 is prevented from diffusing in target material 2 as an impurity, so target 2 can be used efficiently.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16375679A JPS5687663A (en) | 1979-12-17 | 1979-12-17 | Thin film forming method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16375679A JPS5687663A (en) | 1979-12-17 | 1979-12-17 | Thin film forming method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5687663A true JPS5687663A (en) | 1981-07-16 |
Family
ID=15780095
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16375679A Pending JPS5687663A (en) | 1979-12-17 | 1979-12-17 | Thin film forming method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5687663A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02267261A (en) * | 1989-04-06 | 1990-11-01 | Kojundo Chem Lab Co Ltd | Production of target for sputtering |
-
1979
- 1979-12-17 JP JP16375679A patent/JPS5687663A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02267261A (en) * | 1989-04-06 | 1990-11-01 | Kojundo Chem Lab Co Ltd | Production of target for sputtering |
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