JPS57192097A - Formation of metal film - Google Patents

Formation of metal film

Info

Publication number
JPS57192097A
JPS57192097A JP56077219A JP7721981A JPS57192097A JP S57192097 A JPS57192097 A JP S57192097A JP 56077219 A JP56077219 A JP 56077219A JP 7721981 A JP7721981 A JP 7721981A JP S57192097 A JPS57192097 A JP S57192097A
Authority
JP
Japan
Prior art keywords
evaporation
layer
pedestal
film
blocks
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56077219A
Other languages
Japanese (ja)
Other versions
JPS6250073B2 (en
Inventor
Kazunari Oota
Yuichi Shimizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP56077219A priority Critical patent/JPS57192097A/en
Publication of JPS57192097A publication Critical patent/JPS57192097A/en
Publication of JPS6250073B2 publication Critical patent/JPS6250073B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Die Bonding (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To enable to perform the evaporation treatment of In to a laser mount material and the surface treatment by etching with plural number of pieces at the same time when formation of metal film is to be performed by a method wherein platinum is provided on the surface of an evaporation pedestal. CONSTITUTION:Cu blocks 19 of plural number of pieces being the laser mount material are put at the same time as the material to be evaporated on a flat glass plate 15 to be used as the evaporation pedestal. A Pt layer 17 is formed on the glass plate 15 interposing a Ti layer 16 between them to form the evaporation pedestal. The Ti layer 16 is provided for intensification of adhesion between the glass plate 15 and the Pt layer 17. In of the solder material is evaporated on the Cu blocks 19 put on the evaporation pedestal by this way, and the In solder film 18 is formed on the evaporation pedestral consisting of the Cu blocks 19, the glass plate 15, the Ti layer 16, and the Pt layer 17. The Pt layer 17 is made to be exposed on the surface of the evaporation pedestral like this. Because mutually adhering intensity of the Pt layer 17 and the In solder film 18 is sufficiently large, even when etching of the film 18 is performed in the condition that the blocks 19 are put thereon, the situation that the film 18 is peeled off from the evaporation pedestal is not generated.
JP56077219A 1981-05-20 1981-05-20 Formation of metal film Granted JPS57192097A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56077219A JPS57192097A (en) 1981-05-20 1981-05-20 Formation of metal film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56077219A JPS57192097A (en) 1981-05-20 1981-05-20 Formation of metal film

Publications (2)

Publication Number Publication Date
JPS57192097A true JPS57192097A (en) 1982-11-26
JPS6250073B2 JPS6250073B2 (en) 1987-10-22

Family

ID=13627732

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56077219A Granted JPS57192097A (en) 1981-05-20 1981-05-20 Formation of metal film

Country Status (1)

Country Link
JP (1) JPS57192097A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62136829A (en) * 1985-12-10 1987-06-19 Sharp Corp Die bonding method for optical semiconductor element

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62136829A (en) * 1985-12-10 1987-06-19 Sharp Corp Die bonding method for optical semiconductor element

Also Published As

Publication number Publication date
JPS6250073B2 (en) 1987-10-22

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