JPS51140560A - Method of monitoring homoepitaxy film thickness - Google Patents

Method of monitoring homoepitaxy film thickness

Info

Publication number
JPS51140560A
JPS51140560A JP6431775A JP6431775A JPS51140560A JP S51140560 A JPS51140560 A JP S51140560A JP 6431775 A JP6431775 A JP 6431775A JP 6431775 A JP6431775 A JP 6431775A JP S51140560 A JPS51140560 A JP S51140560A
Authority
JP
Japan
Prior art keywords
monitoring
film thickness
homoepitaxy
homoepitaxy film
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6431775A
Other languages
Japanese (ja)
Inventor
Katsuo Sugawara
Noriyoshi Nakazawa
Katsuhiko Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP6431775A priority Critical patent/JPS51140560A/en
Priority to DE19762623687 priority patent/DE2623687C3/en
Priority to NL7605871A priority patent/NL7605871A/en
Publication of JPS51140560A publication Critical patent/JPS51140560A/en
Priority to US05/902,033 priority patent/US4203799A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0675—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating using interferometry
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/16—Controlling or regulating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Abstract

PURPOSE: To provide a method of enabling optical film thickness monitoring of the grawing layer in homoepitaxy and rightly controlling the thickness of film by forming a different substance layer in a base plate through driving ions in advance.
COPYRIGHT: (C)1976,JPO&Japio
JP6431775A 1975-05-30 1975-05-30 Method of monitoring homoepitaxy film thickness Pending JPS51140560A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP6431775A JPS51140560A (en) 1975-05-30 1975-05-30 Method of monitoring homoepitaxy film thickness
DE19762623687 DE2623687C3 (en) 1975-05-30 1976-05-26 Method of measuring the thickness of a layer epitaxially grown on a substrate
NL7605871A NL7605871A (en) 1975-05-30 1976-05-31 METHOD OF CHECKING THE THICKNESS OF AN EPITAXIALLY GROWN LAYER ON A SUBSTRATE.
US05/902,033 US4203799A (en) 1975-05-30 1978-05-02 Method for monitoring thickness of epitaxial growth layer on substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6431775A JPS51140560A (en) 1975-05-30 1975-05-30 Method of monitoring homoepitaxy film thickness

Publications (1)

Publication Number Publication Date
JPS51140560A true JPS51140560A (en) 1976-12-03

Family

ID=13254725

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6431775A Pending JPS51140560A (en) 1975-05-30 1975-05-30 Method of monitoring homoepitaxy film thickness

Country Status (3)

Country Link
JP (1) JPS51140560A (en)
DE (1) DE2623687C3 (en)
NL (1) NL7605871A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5555520A (en) * 1978-10-20 1980-04-23 Hitachi Ltd Method of controlling thickness of film
JPS5850737A (en) * 1981-09-21 1983-03-25 Mitsubishi Electric Corp Manufacture apparatus for semiconductor element
JP2019009426A (en) * 2017-06-27 2019-01-17 株式会社サイオクス Method for measuring film thickness, method for manufacturing nitride semiconductor laminate, and nitride semiconductor laminate

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7605234A (en) * 1976-05-17 1977-11-21 Philips Nv PROCEDURE FOR MANUFACTURING A SEMI-CONDUCTOR DEVICE AND SEMI-CONDUCTOR DEVICE MANUFACTURED USING THE PROCESS.
NL7710164A (en) * 1977-09-16 1979-03-20 Philips Nv METHOD OF TREATING A SINGLE CRYSTAL LINE BODY.
DE3034175A1 (en) * 1980-09-11 1982-04-15 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Chemical deposition of electrically conducting layers - where electrical properties of deposit are used to indicate end of deposition process, esp. in mfg. electronic components

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5555520A (en) * 1978-10-20 1980-04-23 Hitachi Ltd Method of controlling thickness of film
JPS5850737A (en) * 1981-09-21 1983-03-25 Mitsubishi Electric Corp Manufacture apparatus for semiconductor element
JPS6322610B2 (en) * 1981-09-21 1988-05-12 Mitsubishi Electric Corp
JP2019009426A (en) * 2017-06-27 2019-01-17 株式会社サイオクス Method for measuring film thickness, method for manufacturing nitride semiconductor laminate, and nitride semiconductor laminate

Also Published As

Publication number Publication date
DE2623687A1 (en) 1976-12-02
NL7605871A (en) 1976-12-02
DE2623687B2 (en) 1978-08-10
DE2623687C3 (en) 1979-04-19

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