JPS5555520A - Method of controlling thickness of film - Google Patents

Method of controlling thickness of film

Info

Publication number
JPS5555520A
JPS5555520A JP12833378A JP12833378A JPS5555520A JP S5555520 A JPS5555520 A JP S5555520A JP 12833378 A JP12833378 A JP 12833378A JP 12833378 A JP12833378 A JP 12833378A JP S5555520 A JPS5555520 A JP S5555520A
Authority
JP
Japan
Prior art keywords
thickness
films
film
time
rays
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12833378A
Other languages
Japanese (ja)
Inventor
Akira Kanai
Hiroo Tochikubo
Shiro Nagashima
Toshimichi Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Hitachi High Tech Corp
Original Assignee
Hitachi Ltd
Hitachi Electronics Engineering Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Hitachi Electronics Engineering Co Ltd filed Critical Hitachi Ltd
Priority to JP12833378A priority Critical patent/JPS5555520A/en
Publication of JPS5555520A publication Critical patent/JPS5555520A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process

Abstract

PURPOSE:To cause accurate epitaxial growth and make the thickness of film uniform among batches, by measuring the velocity of the epitaxial growth in its initial stage, thereafter fixing the conditions of the growth and controlling the thickness of the films depending on the time only. CONSTITUTION:A heating jig 2 is provided in a transparent quartz tube 1 around which a heating coil is equipped. Silicon substrate wafers 3a, 3b to be epitaxially treated and a dummy silicon substrate 3n having an SiO2 film 4 on the surface are set on the heating jig to cause epitaxial growth. At that time, single crystal layers 5 are grown on the substrates 3a, 3b and a polycrystalline silicon layer 6 is grown on the substrate 3n. Infrared rays radiated from the substrate 3n interfere with one another when the rays are transmitted through the SiO2 film 4 and the layer 6. The intensity of the rays transmitted through the film and the layer is measured to determine the thickness of the epitaxially grown films. Plotting the intensity of the interfering rays and the growing time, an interference wave form corresponding to the thickness of the films is shown. The thickness of the films can be calculated from the interference wave form. The growing conditions are then fixed so that the thickness of the epitaxially grown films can be controlled depending on the time only.
JP12833378A 1978-10-20 1978-10-20 Method of controlling thickness of film Pending JPS5555520A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12833378A JPS5555520A (en) 1978-10-20 1978-10-20 Method of controlling thickness of film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12833378A JPS5555520A (en) 1978-10-20 1978-10-20 Method of controlling thickness of film

Publications (1)

Publication Number Publication Date
JPS5555520A true JPS5555520A (en) 1980-04-23

Family

ID=14982189

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12833378A Pending JPS5555520A (en) 1978-10-20 1978-10-20 Method of controlling thickness of film

Country Status (1)

Country Link
JP (1) JPS5555520A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59106007U (en) * 1983-01-06 1984-07-17 株式会社東芝 Film thickness change measuring device
JPH02106036A (en) * 1988-10-14 1990-04-18 Tokyo Electron Ltd Selectivity monitoring method
WO1998022638A1 (en) * 1996-11-18 1998-05-28 Advanced Semiconductor Materials America, Inc. Method for adjusting semiconductor processing equipment

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5033772A (en) * 1973-07-25 1975-04-01
JPS51140560A (en) * 1975-05-30 1976-12-03 Hitachi Ltd Method of monitoring homoepitaxy film thickness

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5033772A (en) * 1973-07-25 1975-04-01
JPS51140560A (en) * 1975-05-30 1976-12-03 Hitachi Ltd Method of monitoring homoepitaxy film thickness

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59106007U (en) * 1983-01-06 1984-07-17 株式会社東芝 Film thickness change measuring device
JPH0119041Y2 (en) * 1983-01-06 1989-06-02
JPH02106036A (en) * 1988-10-14 1990-04-18 Tokyo Electron Ltd Selectivity monitoring method
WO1998022638A1 (en) * 1996-11-18 1998-05-28 Advanced Semiconductor Materials America, Inc. Method for adjusting semiconductor processing equipment
US6126744A (en) * 1996-11-18 2000-10-03 Asm America, Inc. Method and system for adjusting semiconductor processing equipment

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